Two‐band model and ground state of heavy fermion compounds

1985 ◽  
Vol 57 (8) ◽  
pp. 3084-3086 ◽  
Author(s):  
D. Jaccard ◽  
J. Flouquet ◽  
J. Sierro
1996 ◽  
Vol 10 (07) ◽  
pp. 287-292
Author(s):  
IGOR N. KARNAUKHOV

We present a two-band model of the gas of fermions consisting of a parabolic band of conduction electrons and a band of local pairs interacting via a δ-function interband interaction. The model is integrable and its solution has been obtained by means of the Bethe ansatz. The ground state energy and the density of conduction electrons have been calculated numerically.


1967 ◽  
Vol 45 (1) ◽  
pp. 119-126 ◽  
Author(s):  
J. Basinski ◽  
R. Olivier

Hall effect and resistivity measurements have been made in the temperature range 4.2–360 °K on several samples of n-type GaAs grown under oxygen atmosphere and without any other intentional dopings. The principal shallow donor in this material is considered to be Si. All samples exhibited impurity-band conduction at low temperature. Electron concentrations in the conduction band were calculated, using a two-band model, and then fitted to the usual equation expressing charge neutrality. A value of 2.3 × 10−3 eV was obtained for the ionization energy of the donors, for donor concentration ranging from 5 × 1015 cm−3 to 2 × 1016 cm−3. The conduction in the impurity band was of the hopping type for these concentrations. A value of 3.5 × 1016 cm−3 was obtained for the critical transition concentration of the impurity-band conduction to the metallic type.


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