Two-band model with attractive and repulsive interactions in one dimension: Ground state, excitations, and thermodynamics

1994 ◽  
Vol 49 (9) ◽  
pp. 6132-6142 ◽  
Author(s):  
P. Schlottmann
Keyword(s):  
Ground State ◽  
One Dimension ◽  
Band Model ◽  
Repulsive Interactions ◽  
Two Band Model

scholarly journals Phases of the two-band model of spinless fermions in one dimension

2000 ◽  
Vol 61 (4) ◽  
pp. 2497-2505 ◽  
Author(s):  
Urs Ledermann ◽  
Karyn Le Hur
Keyword(s):  
One Dimension ◽  
Band Model ◽  
Two Band Model

Two‐band model and ground state of heavy fermion compounds

1985 ◽  
Vol 57 (8) ◽  
pp. 3084-3086 ◽  
Author(s):  
D. Jaccard ◽  
J. Flouquet ◽  
J. Sierro
Keyword(s):  
Ground State ◽  
Heavy Fermion ◽  
Band Model ◽  
Two Band Model

INTEGRABLE TWO-PARAMETER MODEL OF THE FERMI GAS

1996 ◽  
Vol 10 (07) ◽  
pp. 287-292
Author(s):  
IGOR N. KARNAUKHOV
Keyword(s):  
Bethe Ansatz ◽  
Ground State ◽  
State Energy ◽  
Fermi Gas ◽  
Band Model ◽  
Conduction Electrons ◽  
Interband Interaction ◽  
Two Band Model ◽  
Two Parameter ◽  
Local Pairs

We present a two-band model of the gas of fermions consisting of a parabolic band of conduction electrons and a band of local pairs interacting via a δ-function interband interaction. The model is integrable and its solution has been obtained by means of the Bethe ansatz. The ground state energy and the density of conduction electrons have been calculated numerically.

IONIZATION ENERGY AND IMPURITY BAND CONDUCTION OF SHALLOW DONORS IN n-GALLIUM ARSENIDE

1967 ◽  
Vol 45 (1) ◽  
pp. 119-126 ◽  
Author(s):  
J. Basinski ◽  
R. Olivier
Keyword(s):  
Ionization Energy ◽  
Impurity Band ◽  
Shallow Donor ◽  
Band Model ◽  
A Value ◽  
Transition Concentration ◽  
Temperature Electron ◽  
Two Band Model ◽  
Band Conduction ◽  
Made In

Hall effect and resistivity measurements have been made in the temperature range 4.2–360 °K on several samples of n-type GaAs grown under oxygen atmosphere and without any other intentional dopings. The principal shallow donor in this material is considered to be Si. All samples exhibited impurity-band conduction at low temperature. Electron concentrations in the conduction band were calculated, using a two-band model, and then fitted to the usual equation expressing charge neutrality. A value of 2.3 × 10−3 eV was obtained for the ionization energy of the donors, for donor concentration ranging from 5 × 1015 cm−3 to 2 × 1016 cm−3. The conduction in the impurity band was of the hopping type for these concentrations. A value of 3.5 × 1016 cm−3 was obtained for the critical transition concentration of the impurity-band conduction to the metallic type.

ENERGY BAND OVERLAPPING IN HIGH-Tc SUPERCONDUCTORS

1996 ◽  
Vol 10 (30) ◽  
pp. 1483-1490 ◽  
Author(s):  
M. MORENO ◽  
R. M. MÉNDEZ-MORENO ◽  
M. A. ORTIZ ◽  
S. OROZCO
Keyword(s):  
Weak Coupling ◽  
Cuprate Superconductors ◽  
Weak Coupling Limit ◽  
Band Model ◽  
Coupling Constant ◽  
High Tc Superconductors ◽  
Energy Bands ◽  
Effective Coupling ◽  
High Tc ◽  
Two Band Model

Multi-band superconductors are analyzed and the relevance of overlapping energy bands to the high-T c of these materials is studied. Within the BCS framework, a two band model with generalized Fermi surface topologies is developed. Values of the overlapped occupancy parameters for typical cuprate superconductors are obtained as a function of the ratio R and the effective coupling constant, λ, in the weak-coupling limit. The overlap scale is of the order or lower than the cutoff (Debye) energy. The typical behavior of the isotope effect is obtained. As these superconductors have transition temperatures above the phonon barrier, the results of this approach are important to the generic understanding of the high-T c superconducting mechanism.

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