scholarly journals Electron transmission in normal metal/heavy-fermion superconductor junctions: A two-band model

2008 ◽  
Vol 77 (13) ◽  
Author(s):  
M. A. N. Araújo ◽  
P. D. Sacramento
Keyword(s):  
Heavy Fermion ◽  
Normal Metal ◽  
Band Model ◽  
Electron Transmission ◽  
Two Band Model ◽  
Heavy Fermion Superconductor

Two‐band model and ground state of heavy fermion compounds

1985 ◽  
Vol 57 (8) ◽  
pp. 3084-3086 ◽  
Author(s):  
D. Jaccard ◽  
J. Flouquet ◽  
J. Sierro
Keyword(s):  
Ground State ◽  
Heavy Fermion ◽  
Band Model ◽  
Two Band Model

Spin Fluctuations in the Heavy Fermion Superconductor UPd2Al3Studied by Neutron Inelastic Scattering

1997 ◽  
Vol 66 (7) ◽  
pp. 1884-1887 ◽  
Author(s):  
Noriaki Sato ◽  
Naofumi Aso ◽  
Gerry H. Lander ◽  
Bertrand Roessli ◽  
Takemi Komatsubara ◽  
...  
Keyword(s):  
Inelastic Scattering ◽  
Heavy Fermion ◽  
Spin Fluctuations ◽  
Neutron Inelastic Scattering ◽  
Heavy Fermion Superconductor

Anisotropy of Heat Conduction in the Heavy Fermion Superconductor UPt3

1994 ◽  
Vol 73 (24) ◽  
pp. 3294-3297 ◽  
Author(s):  
Benoit Lussier ◽  
Brett Ellman ◽  
Louis Taillefer
Keyword(s):  
Heat Conduction ◽  
Heavy Fermion ◽  
Heavy Fermion Superconductor

IONIZATION ENERGY AND IMPURITY BAND CONDUCTION OF SHALLOW DONORS IN n-GALLIUM ARSENIDE

1967 ◽  
Vol 45 (1) ◽  
pp. 119-126 ◽  
Author(s):  
J. Basinski ◽  
R. Olivier
Keyword(s):  
Ionization Energy ◽  
Impurity Band ◽  
Shallow Donor ◽  
Band Model ◽  
A Value ◽  
Transition Concentration ◽  
Temperature Electron ◽  
Two Band Model ◽  
Band Conduction ◽  
Made In

Hall effect and resistivity measurements have been made in the temperature range 4.2–360 °K on several samples of n-type GaAs grown under oxygen atmosphere and without any other intentional dopings. The principal shallow donor in this material is considered to be Si. All samples exhibited impurity-band conduction at low temperature. Electron concentrations in the conduction band were calculated, using a two-band model, and then fitted to the usual equation expressing charge neutrality. A value of 2.3 × 10−3 eV was obtained for the ionization energy of the donors, for donor concentration ranging from 5 × 1015 cm−3 to 2 × 1016 cm−3. The conduction in the impurity band was of the hopping type for these concentrations. A value of 3.5 × 1016 cm−3 was obtained for the critical transition concentration of the impurity-band conduction to the metallic type.

Sign in / Sign up

Export Citation Format

Share Document