Investigation of diffusion length and lifetime in lead chalcogenides by electron‐beam‐induced‐current measurements at low temperatures

1984 ◽  
Vol 56 (2) ◽  
pp. 362-367 ◽  
Author(s):  
A. Eisenbeiss ◽  
H. Heinrich ◽  
A. Jakubowicz ◽  
W. Maurer ◽  
L. Palmetshofer ◽  
...  
Keyword(s):  
Electron Beam ◽  
Low Temperatures ◽  
Diffusion Length ◽  
Induced Current ◽  
Lead Chalcogenides ◽  
Electron Beam Induced Current

Recombination Processes in 4H-SiC pn Structures

2016 ◽  
Vol 858 ◽  
pp. 345-348 ◽  
Author(s):  
Anatoly M. Strel'chuk ◽  
Baptiste Berenguier ◽  
Eugene B. Yakimov ◽  
Laurent Ottaviani
Keyword(s):  
Electron Beam ◽  
Room Temperature ◽  
Diffusion Length ◽  
Induced Current ◽  
Donor Concentration ◽  
Reverse Voltage ◽  
Recombination Processes ◽  
Electron Beam Induced Current ◽  
Switching Characteristics ◽  
Hole Diffusion Length

Commercial 4H-SiC p+n structures with an uncompensated donor concentration (Nd-Na) of ~1.5∙1015 cm-3 in the n-type epitaxial layer are studied. The measurement of the photocurrent, electron beam induced current and transient switching characteristics (from forward to reverse voltage), altogether showed that the value of the hole diffusion length, about 2 μm at room temperature, increases to at least 7 μm at 620 K.

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