Depletion layer formation rate at T<30 °K in buried channel, metal‐oxide‐semiconductor transistors

S. K. Tewksbury; M. R. Biazzo; T. L. Lindstrom; D. M. Tennant

doi:10.1063/1.333940

Depletion layer formation rate at T<30 °K in buried channel, metal‐oxide‐semiconductor transistors

Journal of Applied Physics ◽

10.1063/1.333940 ◽

1984 ◽

Vol 56 (2) ◽

pp. 517-521 ◽

Cited By ~ 4

Author(s):

S. K. Tewksbury ◽

M. R. Biazzo ◽

T. L. Lindstrom ◽

D. M. Tennant

Keyword(s):

Metal Oxide ◽

Formation Rate ◽

Metal Oxide Semiconductor ◽

Depletion Layer ◽

Oxide Semiconductor ◽

Layer Formation ◽

Buried Channel

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Phenomenalistic reconsideration of Hooge parameter in buried-channel metal-oxide-semiconductor field-effect transistors

2001 IEEE International SOI Conference Proceedings (Cat No 01CH37207) SOI-01 ◽

10.1109/soic.2001.957980 ◽

2002 ◽

Author(s):

Y. Omura

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Buried Channel

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Compact Hot-Electron Induced Oxide Trapping Charge and Post-Stress Drain Current Modeling for Buried-Channel p-Type Metal–Oxide–Semiconductor Field-Effect-Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.6200 ◽

2008 ◽

Vol 47 (8) ◽

pp. 6200-6204 ◽

Cited By ~ 1

Author(s):

Chorng-Jye Sheu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Drain Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Electron ◽

Buried Channel ◽

P Type ◽

Post Stress

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Publisher’s Note: “Stress-induced effects on depletion-layer capacitance of metal–oxide–semiconductor capacitors” [Appl. Phys. Lett. 83, 4351 (2003)]

Applied Physics Letters ◽

10.1063/1.1643096 ◽

2004 ◽

Vol 84 (2) ◽

pp. 308-308 ◽

Cited By ~ 1

Author(s):

Kazunori Matsuda ◽

Yozo Kanda

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Depletion Layer ◽

Oxide Semiconductor

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Admittance and subthreshold characteristics of atomic-layer-deposition Al2O3 on In0.53Ga0.47As in surface and buried channel flatband metal-oxide-semiconductor field effect transistors

Journal of Applied Physics ◽

10.1063/1.4720940 ◽

2012 ◽

Vol 111 (10) ◽

pp. 104112 ◽

Cited By ~ 5

Author(s):

G. W. Paterson ◽

S. J. Bentley ◽

M. C. Holland ◽

I. G. Thayne ◽

J. Ahn ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Buried Channel ◽

Layer Deposition

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Hooge parameter in buried-channel metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1434543 ◽

2002 ◽

Vol 91 (3) ◽

pp. 1378-1384 ◽

Cited By ~ 3

Author(s):

Yasuhisa Omura

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Buried Channel

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Tinv Scaling and Gate Leakage Reduction for n-Type Metal Oxide Semiconductor Field Effect Transistor with HfSix/HfO2Gate Stack by Interfacial Layer Formation Using Ozone–Water-Last Treatment

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.2379 ◽

2008 ◽

Vol 47 (4) ◽

pp. 2379-2382 ◽

Cited By ~ 4

Author(s):

Itaru Oshiyama ◽

Kaori Tai ◽

Tomoyuki Hirano ◽

Shinpei Yamaguchi ◽

Kazuaki Tanaka ◽

...

Keyword(s):

Metal Oxide ◽

Interfacial Layer ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Layer Formation ◽

Gate Leakage ◽

Leakage Reduction ◽

Effect Transistor

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Characteristics of 4H-SiC n- and p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Ion-Implanted Buried Channel

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.02bf05 ◽

2012 ◽

Vol 51 (2S) ◽

pp. 02BF05 ◽

Cited By ~ 15

Author(s):

Mitsuo Okamoto ◽

Miwako Iijima ◽

Takahiro Nagano ◽

Kenji Fukuda ◽

Hajime Okumura

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Buried Channel ◽

Ion Implanted

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Static and nonequilibrium transient conductance at strong carrier freeze‐out in a buried channel, metal‐oxide‐semiconductor transistor

Journal of Applied Physics ◽

10.1063/1.333939 ◽

1984 ◽

Vol 56 (2) ◽

pp. 511-516 ◽

Cited By ~ 7

Author(s):

S. K. Tewksbury ◽

M. R. Biazzo ◽

T. R. Harrison ◽

T. L. Lindstrom ◽

D. M. Tennant ◽

...

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Buried Channel ◽

Freeze Out

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Systematic investigation on in-plane anisotropy of surface and buried channel mobility of metal-oxide-semiconductor field-effect-transistors on Si-, a-, and m-face 4H-SiC

Applied Physics Letters ◽

10.1063/1.4914385 ◽

2015 ◽

Vol 106 (10) ◽

pp. 103506 ◽

Cited By ~ 8

Author(s):

K. Ariyoshi ◽

R. Iijima ◽

S. Harada ◽

K. Kojima ◽

J. Senzaki ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Systematic Investigation ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Channel Mobility ◽

Buried Channel ◽

Plane Anisotropy

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A Compact Buried-Channel Lightly-Doped-Drain Metal-Oxide-Semiconductor- Field-Effect-Transistor Model

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.1772 ◽

1998 ◽

Vol 37 (Part 1, No. 4A) ◽

pp. 1772-1780

Author(s):

Sheng-Lyang Jang ◽

Chwan-Gwo Chyau ◽

Shau-Shen Liu ◽

Chung-Ming Chiu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Buried Channel ◽

Transistor Model ◽

Effect Transistor ◽

Lightly Doped Drain

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