Hooge parameter in buried-channel metal-oxide-semiconductor field-effect transistors

Yasuhisa Omura

doi:10.1063/1.1434543

Hooge parameter in buried-channel metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1434543 ◽

2002 ◽

Vol 91 (3) ◽

pp. 1378-1384 ◽

Cited By ~ 3

Author(s):

Yasuhisa Omura

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Buried Channel

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Phenomenalistic reconsideration of Hooge parameter in buried-channel metal-oxide-semiconductor field-effect transistors

2001 IEEE International SOI Conference Proceedings (Cat No 01CH37207) SOI-01 ◽

10.1109/soic.2001.957980 ◽

2002 ◽

Author(s):

Y. Omura

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Buried Channel

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Compact Hot-Electron Induced Oxide Trapping Charge and Post-Stress Drain Current Modeling for Buried-Channel p-Type Metal–Oxide–Semiconductor Field-Effect-Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.6200 ◽

2008 ◽

Vol 47 (8) ◽

pp. 6200-6204 ◽

Cited By ~ 1

Author(s):

Chorng-Jye Sheu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Drain Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Electron ◽

Buried Channel ◽

P Type ◽

Post Stress

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Admittance and subthreshold characteristics of atomic-layer-deposition Al2O3 on In0.53Ga0.47As in surface and buried channel flatband metal-oxide-semiconductor field effect transistors

Journal of Applied Physics ◽

10.1063/1.4720940 ◽

2012 ◽

Vol 111 (10) ◽

pp. 104112 ◽

Cited By ~ 5

Author(s):

G. W. Paterson ◽

S. J. Bentley ◽

M. C. Holland ◽

I. G. Thayne ◽

J. Ahn ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Buried Channel ◽

Layer Deposition

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Characteristics of 4H-SiC n- and p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Ion-Implanted Buried Channel

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.02bf05 ◽

2012 ◽

Vol 51 (2S) ◽

pp. 02BF05 ◽

Cited By ~ 15

Author(s):

Mitsuo Okamoto ◽

Miwako Iijima ◽

Takahiro Nagano ◽

Kenji Fukuda ◽

Hajime Okumura

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Buried Channel ◽

Ion Implanted

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Systematic investigation on in-plane anisotropy of surface and buried channel mobility of metal-oxide-semiconductor field-effect-transistors on Si-, a-, and m-face 4H-SiC

Applied Physics Letters ◽

10.1063/1.4914385 ◽

2015 ◽

Vol 106 (10) ◽

pp. 103506 ◽

Cited By ~ 8

Author(s):

K. Ariyoshi ◽

R. Iijima ◽

S. Harada ◽

K. Kojima ◽

J. Senzaki ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Systematic Investigation ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Channel Mobility ◽

Buried Channel ◽

Plane Anisotropy

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InAs inserted InGaAs buried channel metal-oxide-semiconductor field-effect-transistors with atomic-layer-deposited gate dielectric

Applied Physics Letters ◽

10.1063/1.3559609 ◽

2011 ◽

Vol 98 (8) ◽

pp. 082106 ◽

Cited By ~ 29

Author(s):

Fei Xue ◽

Han Zhao ◽

Yen-Ting Chen ◽

Yanzhen Wang ◽

Fei Zhou ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Buried Channel

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Electron Substrate and Gate Current Modeling for Single-Drain Buried-Channel p-Type Metal–Oxide–Semiconductor Field-Effect Transistors Including Tunneling Mechanisms

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.8248 ◽

2008 ◽

Vol 47 (11) ◽

pp. 8248-8252

Author(s):

Chorng-Jye Sheu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Current ◽

Buried Channel ◽

P Type

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Characteristics of 4H-SiC n- and p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Ion-Implanted Buried Channel

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.02bf05 ◽

2012 ◽

Vol 51 (2) ◽

pp. 02BF05

Author(s):

Mitsuo Okamoto ◽

Miwako Iijima ◽

Takahiro Nagano ◽

Kenji Fukuda ◽

Hajime Okumura

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Buried Channel ◽

Ion Implanted

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InGaAs buried channel metal-oxide-semiconductor field-effect transistors for low-power logic applications

10.14711/thesis-b1198657 ◽

2012 ◽

Author(s):

Xiuju Zhou

Keyword(s):

Metal Oxide ◽

Low Power ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Buried Channel ◽

Low Power Logic

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Investigation of piezoresistive effect in p-channel metal–oxide–semiconductor field-effect transistors fabricated on circular silicon-on-insulator diaphragms using cost-effective minimal-fab process

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.06hd03 ◽

2018 ◽

Vol 57 (6S1) ◽

pp. 06HD03 ◽

Cited By ~ 3

Author(s):

Yongxun Liu ◽

Hiroyuki Tanaka ◽

Norio Umeyama ◽

Kazuhiro Koga ◽

Sommawan Khumpuang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Cost Effective ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Piezoresistive Effect

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