Silicon–oxygen complexes containing three oxygen atoms as the dominant thermal donor species in heat‐treated oxygen‐containing silicon

1983 ◽  
Vol 54 (9) ◽  
pp. 5453-5455 ◽  
Author(s):  
G. S. Oehrlein
Keyword(s):  
Thermal Donor ◽  
Heat Treated ◽  
Silicon Oxygen ◽  
Donor Species ◽  
Oxygen Complexes ◽  
Oxygen Atoms

"New Donors" in Czochralski Grown Silicon Annealed at T≥ 600°C under Compressive Stress

2005 ◽  
Vol 108-109 ◽  
pp. 181-186 ◽  
Author(s):  
Valentin V. Emtsev ◽  
Boris A. Andreev ◽  
Gagik A. Oganesyan ◽  
D.I. Kryzhkov ◽  
Andrzej Misiuk ◽  
...  
Keyword(s):  
Mechanical Stress ◽  
Compressive Stress ◽  
Reference Temperature ◽  
Enhancement Effect ◽  
Shallow Acceptor ◽  
Thermal Donor ◽  
Compressive Stresses ◽  
Heat Treated ◽  
Donor Formation ◽  
New Donors

Effects of compressive stress on oxygen agglomeration processes in Czochralski grown silicon heat treated at T= 450OC, used as a reference temperature, and T= 600OC to 800OC are investigated in some detail. Compressive stresses of about P= 1 GPa lead to enhanced formation of Thermal Double Donors in materials annealed over a temperature range of T= 450OC – 600OC. It has been shown that the formation of thermal donors at T= 450OC under normal conditions and compressive stress is accompanied with loss of substitutional boron. In contrast, the concentration of the shallow acceptor states of substitutional boron in silicon annealed under stress at T≥ 600OC remains constant. An enhancement effect of thermal donor formation is gradually weakened at T≥ 700OC. The oxygen diffusivity sensitive to mechanical stress is believed to be responsible for the observed effects in heat-treated silicon.

Number of oxygen atoms in a thermal donor in silicon

1988 ◽  
Vol 63 (1) ◽  
pp. 136-141 ◽  
Author(s):  
D. K. Schroder ◽  
C. S. Chen ◽  
J. S. Kang ◽  
X. D. Song
Keyword(s):  
Thermal Donor ◽  
Oxygen Atoms

A Unified Treatment of The Thermal Donor Hierarchies in Silicon and Germanium

1985 ◽  
Vol 59 ◽  
Author(s):  
Jeffrey T. Borenstein ◽  
James W. Corbett
Keyword(s):  
Dielectric Constant ◽  
Effective Mass ◽  
Ground State ◽  
Shallow Donor ◽  
Binding Energies ◽  
Electron Effective Mass ◽  
Perturbation Model ◽  
Thermal Donor ◽  
Silicon And Germanium ◽  
Oxygen Atoms

ABSTRACTThe hierarchies of thermal donor binding energies produced by annealing oxygen-containing silicon or germanium at ca. 450°C are explained by using a generalized perturbation model which involves a standard repulsion parameter for the interaction between agglomerating oxygen atoms and the shallow donor electrons. This model is capable of fitting the ground state ladders for both charge states of the thermal donors in both Si and Ge, since differences between the two ladders can–ee explained entirely by the change in the electron-effective-mass and dielectric constant of the host.

Cluster Computations Related to Silicon Thermal Donors

1985 ◽  
Vol 59 ◽  
Author(s):  
Lawrence C. Snyder ◽  
James W. Corbett
Keyword(s):  
Crystalline Silicon ◽  
Silicon Crystal ◽  
Silicon Monoxide ◽  
Interstitial Oxygen ◽  
Hydrogen Atoms ◽  
Oxygen Complex ◽  
Quantum Chemical Computations ◽  
Silicon Oxygen ◽  
Boron Carbon ◽  
Oxygen Atoms

ABSTRACTAb-initio quantum chemical computations have been applied to a set of molecular clusters derived from Si5 H12 to model defects in crystalline silicon involving boron, carbon, nitrogen, oxygen, and hydrogen. In computations of defect structure, hydrogen atoms terminating silicon valencies are fixed at their computed positions in Si5H12, to represent forces from the lattice, while the position of other atoms are varied.We have computed the stable bonding structures of boron, carbon, nitrogen and oxygen atoms to a vacancy, as well as interstitial oxygen, the silicon-oxygen ylid and two oxygen atoms bound to a vacancy. The structures of the dipositive ions of the oxygen bearing clusters have been computed as part of a search for candidates for the core of the 450° C oxygen thermal donor in silicon crystal. The computed cluster energies are employed to give an account of defect thermochemistry; the addition of the free atoms to a vacancy, the addition of interstitial oxygen atoms to a vacancy, the reaction of interstitial oxygen atoms to form a vacancy-oxygen complex with the emission of silicon monoxide, and the reaction of interstitial oxygen with the dipositive ion of substitutional oxygen to form the dipositive ion of two oxygen atoms bound to a vacancy.

Thermal Donor Formation in Pre-Heat-Treated nSi:O Crystals

1989 ◽  
Vol 111 (2) ◽  
pp. K149-K154 ◽  
Author(s):  
V. P. Markevich ◽  
L. I. Murin
Keyword(s):  
Thermal Donor ◽  
Heat Treated ◽  
Donor Formation

scholarly journals Formation Kinetics of Thermal Donors in Silicon

1985 ◽  
Vol 59 ◽  
Author(s):  
Jeffrey T. Borenstein ◽  
David Peak ◽  
James W. Corbett
Keyword(s):  
Electronic Absorption Spectra ◽  
Reaction Rates ◽  
Active Species ◽  
Czochralski Silicon ◽  
Thermal Donor ◽  
Formation Kinetics ◽  
Initial Oxygen ◽  
Donor Formation ◽  
Kinetics Of ◽  
Donor Species

ABSTRACTThe kinetics of thermal donor formation in Czochralski-silicon at ca. 450° C are explained by a simple model based on the work of Suezawa and Sumino which derives forward and reverse reaction rates for each electrically active species from the general features of the infrared electronic absorption spectra. The model, which is independent of the chemical nature of the thermal donor core, assumes that all thermal donors beyond the first donor species are chemically stable at the donor formation temperature, and approximates the reactions for species smaller than the first thermal donor as being in chemical equilibrium. The model is shown to be consistent with both sets of the available IR spectra of thermal donors (Oeder-Wagner and Suezawa-Sumino) when differences in the annealing temperature and initial oxygen concentration are taken into account.

Nitrogen-Oxygen Complexes in Silicon

1987 ◽  
Vol 104 ◽  
Author(s):  
Masashi Suezawa ◽  
Koji Sumino
Keyword(s):  
Optical Absorption ◽  
Oxygen Atom ◽  
Main Type ◽  
Absorption Lines ◽  
Electronic Transitions ◽  
Shallow Donors ◽  
Wavenumber Range ◽  
Oxygen Complexes ◽  
Oxygen Atoms

ABSTRACTSeveral series of optical absorption lines are found in the wavenumber range 190–270 1/cm in as-grown crytals of n-type Si involving oxygen and nitrogen simultaneously. They are related to the electronic transitions associated with five kinds of shallow donors each consisting of nitrogen and oxygen atoms (N-O complex). The analysis of the generation kinetics shows that the complex of the main type consists of one oxygen atom and two or three pairs of nitrogen atoms.

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