A Unified Treatment of The Thermal Donor Hierarchies in Silicon and Germanium

1985 ◽  
Vol 59 ◽  
Author(s):  
Jeffrey T. Borenstein ◽  
James W. Corbett
Keyword(s):  
Dielectric Constant ◽  
Effective Mass ◽  
Ground State ◽  
Shallow Donor ◽  
Binding Energies ◽  
Electron Effective Mass ◽  
Perturbation Model ◽  
Thermal Donor ◽  
Silicon And Germanium ◽  
Oxygen Atoms

ABSTRACTThe hierarchies of thermal donor binding energies produced by annealing oxygen-containing silicon or germanium at ca. 450°C are explained by using a generalized perturbation model which involves a standard repulsion parameter for the interaction between agglomerating oxygen atoms and the shallow donor electrons. This model is capable of fitting the ground state ladders for both charge states of the thermal donors in both Si and Ge, since differences between the two ladders can–ee explained entirely by the change in the electron-effective-mass and dielectric constant of the host.

Quadratic Zeeman Effect of Donor Lines in Silicon and Germanium. I. Theory

1972 ◽  
Vol 50 (11) ◽  
pp. 1106-1113 ◽  
Author(s):  
B. Pajot ◽  
F. Merlet ◽  
G. Taravella ◽  
Ph. Arcas
Keyword(s):  
Perturbation Method ◽  
Effective Mass ◽  
Zeeman Effect ◽  
Electron Effective Mass ◽  
Zeeman Shift ◽  
Phosphorus In Silicon ◽  
Shallow Impurities ◽  
Silicon And Germanium ◽  
Quadratic Zeeman Effect ◽  
Theory Framework

Calculation of the quadratic Zeeman shift of donor lines of silicon and germanium has been undertaken in the effective mass theory framework. The energies are obtained by the perturbation method up to second order and a very small interaction between two sublevels m = 1 and m = −1 is found theoretically. The Zeeman patterns (phosphorus in silicon) for different configurations show crossing or noncrossing of the levels and sublevels, depending upon the chosen configuration. The results predict that for germanium, the p0 lines exhibit a splitting due to the anisotropic shift of these lines for some configurations. This theory can also be used for shallow impurities wherever the electron effective mass possesses ellipsoidal symmetry.

Energy Spectra of CdS/Cd1-xZnx S Nano Dot Under The Influence of Magnetic Field

2014 ◽  
Vol 4 (1) ◽  
pp. 460-466
Author(s):  
P. Elangovan ◽  
M. Balakumari ◽  
A. Milton Franklin Benial
Keyword(s):  
Magnetic Field ◽  
Effective Mass ◽  
Applied Magnetic Field ◽  
Theoretical Study ◽  
Shallow Donor ◽  
Binding Energies ◽  
Energy Spectra ◽  
Mass Approximation ◽  
Zn Concentration ◽  
Frame Work

We present a theoretical study on shallow donor binding energies of CdS/ CdZnS nano dot as a strength of  applied magnetic field along Z direction for various Zn concentration. Calculations are carried out by using the technique of variational ansatz within the frame work of effective mass approximation. Our results show that the binding energies are drastically affected by the dot radius, the strength of magnetic field and concentrations.

scholarly journals OPTICAL PROPERTIES OF SHALLOW DONOR NEAR SEMICONDUCTOR-METAL INTERFACE

2012 ◽  
Vol 15 ◽  
pp. 211-218
Author(s):  
ANAHIT DJOTYAN
Keyword(s):  
Optical Properties ◽  
Effective Mass ◽  
Oscillator Strength ◽  
Excited States ◽  
Ground State ◽  
Shallow Donor ◽  
Metal Interface ◽  
Impurity States ◽  
Mass Approximation ◽  
Intraband Absorption

Intraband transitions of an impurity electron from the ground state to 2Px and 2Py excited states of a shallow donor located near a semiconductor-metal interface are investigated as a function of the donor distance from the interface. Impurity states are calculated within the effective mass approximation and using a variational scheme in which the energies and the oscillator strength for the intraband absorption are obtained analytically.

Nitrogen composition dependence of electron effective mass inGaAs1−xNx

2010 ◽  
Vol 82 (12) ◽  
Author(s):  
T. Dannecker ◽  
Y. Jin ◽  
H. Cheng ◽  
C. F. Gorman ◽  
J. Buckeridge ◽  
...  
Keyword(s):  
Effective Mass ◽  
Composition Dependence ◽  
Electron Effective Mass

Temperature dependence of the electron effective mass in InSb

1974 ◽  
Vol 9 (2) ◽  
pp. 568-571 ◽  
Author(s):  
E. S. Koteles ◽  
W. R. Datars
Keyword(s):  
Temperature Dependence ◽  
Effective Mass ◽  
Electron Effective Mass

Number of oxygen atoms in a thermal donor in silicon

1988 ◽  
Vol 63 (1) ◽  
pp. 136-141 ◽  
Author(s):  
D. K. Schroder ◽  
C. S. Chen ◽  
J. S. Kang ◽  
X. D. Song
Keyword(s):  
Thermal Donor ◽  
Oxygen Atoms
Sign in / Sign up

Export Citation Format

Share Document