Minority carrier lifetime improvement by HCl oxidation and argon ion implantation of silicon

1983 ◽  
Vol 54 (7) ◽  
pp. 4211-4212 ◽  
Author(s):  
P. M. Engel ◽  
J. P. de Souza
Keyword(s):  
Ion Implantation ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Argon Ion

Dose and Damage Measurements in Low Dose Ion Implantation in Silicon by Photo-Acoustic Displacement and Minority Carrier Lifetime

1991 ◽  
Vol 30 (Part 2, No. 6A) ◽  
pp. L1025-L1027 ◽  
Author(s):  
Gen Washidzu ◽  
Tohru Hara ◽  
Ryuji Ichikawa ◽  
Hiroyuki Takamatsu ◽  
Shingo Sumie ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Low Dose ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime

Reduction of Traps and Improvement of Carrier Lifetime in SiC Epilayer by Ion Implantation

2007 ◽  
Vol 556-557 ◽  
pp. 603-606 ◽  
Author(s):  
L. Storasta ◽  
Hidekazu Tsuchida
Keyword(s):  
Surface Layer ◽  
Detection Limit ◽  
Ion Implantation ◽  
Deep Level Transient Spectroscopy ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Deep Level ◽  
Minority Carrier Lifetime ◽  
Carbon Ion ◽  
Transient Spectroscopy

Reduction in deep level defects and increase of carrier lifetime in 4H-SiC epilayer was observed after carbon ion implantation into the shallow surface layer of 250 nm and subsequent annealing above 1400 °C. The concentration of Z1/2 and EH6/7 traps was determined by deep level transient spectroscopy 4 μm below the implanted layer. After annealing, concentration of both traps decreased from 1013 cm-3 range to below the detection limit. Minority carrier lifetime almost doubled in the implanted samples compared to the unimplanted samples. We suggest that carbon interstitials from the implanted layer in-diffuse into the layer underneath during annealing and annihilate with carbon vacancies. Our results indicate that Z1/2 and EH6/7 traps are most likely carbon vacancy related.

Nitrogen Ion Implantation Effect on Silicon Solar Cells for Surface Passivation

2018 ◽  
Vol 13 (10) ◽  
pp. 1591-1597
Author(s):  
Rajkumar Sahu ◽  
Srikanta Palei ◽  
Jaeho Choi ◽  
Keunjoo Kim
Keyword(s):  
Ion Implantation ◽  
Conversion Efficiency ◽  
Carrier Lifetime ◽  
Surface Passivation ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Silicon Solar Cells ◽  
Nitrogen Ion Implantation ◽  
Cell Conversion ◽  
Nitrogen Ion

We investigated the surface passivation of silicon solar cells by nitrogen ion implantation. The nitrogen ion was implanted with the energy of 20 keV at a twist angle of 22.5° from the Si 〈100〉 direction and a tilt angle of 7°. The ion concentration was varied at 1013, 1014, and 1015 N+/cm2. The implanted cell showed the implanted region located below the anti-reflection coating layer. For the low dose cell of 1013 N+/cm2, the nitrogen ion implantation showed increased quantum efficiency, minority carrier lifetime, and conversion efficiency compared to the reference cell. However, as the ion dose was increased, the quantum efficiency, minority carrier lifetime, photoreflectance, and cell conversion efficiency of the fabricated cell decreased. This indicates that nitrogen ion implantation can passivate the surface to increase the cell conversion efficiency with a critical dose of ions.

Microwave transmission method for measuring minority-carrier lifetime in silicon slices

1971 ◽  
Vol 7 (25) ◽  
pp. 754
Author(s):  
R.E. Thomas ◽  
V. Makios ◽  
S. Ogletree ◽  
R. Mckillican
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Transmission Method ◽  
Microwave Transmission

scholarly journals Marked enhancement of the photoresponsivity and minority-carrier lifetime of BaSi2 passivated with atomic hydrogen

2019 ◽  
Vol 3 (6) ◽  
Author(s):  
Zhihao Xu ◽  
Denis A. Shohonov ◽  
Andrew B. Filonov ◽  
Kazuhiro Gotoh ◽  
Tianguo Deng ◽  
...  
Keyword(s):  
Atomic Hydrogen ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Marked Enhancement
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