Effect of residual ion damage on the minority carrier lifetime in molecular beam epitaxy grown silicon doped by low‐energy ion implantation

1995 ◽  
Vol 67 (7) ◽  
pp. 977-979
Author(s):  
C. J. Peters ◽  
J. P. Noël ◽  
D. X. Xu ◽  
M. Buchanan ◽  
J. Du ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Ion Implantation ◽  
Molecular Beam ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Low Energy ◽  
Ion Damage ◽  
Silicon Doped

Minority carrier lifetime and diffusion length in HgTe/CdTe superlattices by molecular beam epitaxy

1992 ◽  
Vol 61 (10) ◽  
pp. 1196-1198 ◽  
Author(s):  
S. H. Shin ◽  
J. M. Arias ◽  
M. Zandian ◽  
J. G. Pasko ◽  
J. Bajaj ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Minority Carrier Lifetime ◽  
And Diffusion

Minority‐carrier lifetime in AlxGa1−xAs grown by molecular‐beam epitaxy

1991 ◽  
Vol 69 (5) ◽  
pp. 3094-3096 ◽  
Author(s):  
R. K. Ahrenkiel ◽  
B. M. Keyes ◽  
T. C. Shen ◽  
J. I. Chyi ◽  
H. Morkoc
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime

scholarly journals Minority carrier lifetime in iodine-doped molecular beam epitaxy-grown HgCdTe

2015 ◽  
Vol 107 (18) ◽  
pp. 182107 ◽  
Author(s):  
I. Madni ◽  
G. A. Umana-Membreno ◽  
W. Lei ◽  
R. Gu ◽  
J. Antoszewski ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime

Enhancement of minority carrier lifetime of GaInP with lateral composition modulation structure grown by molecular beam epitaxy

2014 ◽  
Vol 116 (4) ◽  
pp. 043516 ◽  
Author(s):  
K. W. Park ◽  
C. Y. Park ◽  
Sooraj Ravindran ◽  
S. J. Kang ◽  
H. Y. Hwang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Composition Modulation
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