Far‐infrared photothermal ionization spectroscopy of semiconductors in the presence of intrinsic light

1983 ◽  
Vol 54 (6) ◽  
pp. 3464-3474 ◽  
Author(s):  
M. J. H. van de Steeg ◽  
H. W. H. M. Jongbloets ◽  
J. W. Gerritsen ◽  
P. Wyder
Keyword(s):  
Far Infrared ◽  
Photothermal Ionization ◽  
Photothermal Ionization Spectroscopy

Laser-Thermal Impurity Pumping of Shallow Donors in Ultrapure Germanium

1989 ◽  
Vol 163 ◽  
Author(s):  
T. Theiler ◽  
F. Keilmann ◽  
E. E. Haller
Keyword(s):  
Ground State ◽  
Laser Intensity ◽  
Far Infrared ◽  
Equation Model ◽  
Degree Of Ionization ◽  
Rate Equation Model ◽  
Photothermal Ionization ◽  
Photothermal Ionization Spectroscopy ◽  
Intensity Region ◽  
Critical Intensity

AbstractExtremely narrow far-infrared lines [1] of OH-donors in ultrapure germanium are used to probe the fundamental dynamic processes of impurities. We examine the 1s-2p transition as a function of laser intensity, using photothermal ionization spectroscopy (PTIS) modified by Zeeman tuning with frequency-fixed lasers. We observe a change of the resonance line shape in the intensity region near 10-4 W/cm2. This effect can be quantitatively understood in a rate equation model which shows that at the critical intensity the ground state becomes depleted and the dependence of the recombination on the degree of ionization becomes important. Therefore the critical intensity depends also on compensation.

Photothermal ionization spectroscopy of selectively boron-doped GexSi(1–x)Si strained-layer heterostructures

1989 ◽  
Vol 67 (4) ◽  
pp. 321-325 ◽  
Author(s):  
H. F. Jang ◽  
W. R. Datars ◽  
T. Timusk ◽  
A. A. Berezin ◽  
D. C. Houghton
Keyword(s):  
Dominant Role ◽  
High Mobility ◽  
Hole Mobility ◽  
Far Infrared ◽  
Experimental Conditions ◽  
Strained Layer ◽  
Boron Doped ◽  
Photothermal Ionization ◽  
Photothermal Ionization Spectroscopy ◽  
Sheet Charge

Far-infrared photothermal ionization spectroscopy has been used to investigate the impurities in selectively boron-doped GexSi(1–x)–Si strained-layer heterostructures. The spectra are obtained under various experimental conditions: with and without band-edge light and by varying the temperature of, and voltage applied to, the sample. The transport properties, resistivity, sheet charge density, and Hall hole mobility of these samples are presented. It is found that a sample with a two-dimensional hole gas (2-DHG) behavior at the GexSi(1–x)–Si interface has a weak photoresponse. This is due to a small number of photo-generated carriers in comparison with the residual hole carriers. For samples that do not show 2-DHG behavior, the photo-response from the substrate plays the dominant role for low applied voltages. At higher voltages, the response from the epitaxial layers becomes evident. The majority impurity is identified as the intentional dopant boron, and the dominant minority impurity is found to be phosphorus. It is concluded that although the free carriers are generated in the heavily B-doped layer, those carriers conducted through the low-energy high-mobility GexSi(1–x)–Si interface dominate the photoresponse.

Contactless Photothermal Ionization Spectroscopy of Shallow Defects in Semiconductors

1993 ◽  
Vol 143-147 ◽  
pp. 1365-1370 ◽  
Author(s):  
Boris A. Andreev ◽  
V.B. Ikonnikov ◽  
E.B. Koslov ◽  
T.M. Lifshits ◽  
V.B. Shmagin
Keyword(s):  
Photothermal Ionization ◽  
Photothermal Ionization Spectroscopy ◽  
Defects In Semiconductors

Shallow Nitrogen Donor States in 4H-SiC Investigated by Photothermal Ionization Spectroscopy

2000 ◽  
Vol 338-342 ◽  
pp. 611-614 ◽  
Author(s):  
C.Q. Chen ◽  
Jan Zeman ◽  
F. Engelbrecht ◽  
Christian Peppermüller ◽  
Reinhard Helbig ◽  
...  
Keyword(s):  
Nitrogen Donor ◽  
Photothermal Ionization ◽  
Photothermal Ionization Spectroscopy ◽  
Donor States
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