High-resolution photothermal ionization spectroscopy of lithium-related shallow donors in germanium

1983 ◽  
Vol 27 (10) ◽  
pp. 6564-6567 ◽  
Author(s):  
L. S. Darken
1989 ◽  
Vol 163 ◽  
Author(s):  
H.G. Grimmeiss ◽  
M. Kleverman ◽  
J. Olajos

AbstractThe paper briefly outlines recent developments in high resolution spectroscopy of point defects in silicon. One of the methods, namely photothermal ionization spectroscopy (PTIS) is discussed in detail. Impurities induced by selenium and several transition metals are used as examples m order to illustrate the powerful scope of both transmission and PTIS measurements. These measurements are capable of providing unique information on the electronic properties of point defects, even when the defects exhibit complex excitation spectra.


1993 ◽  
Vol 143-147 ◽  
pp. 1365-1370 ◽  
Author(s):  
Boris A. Andreev ◽  
V.B. Ikonnikov ◽  
E.B. Koslov ◽  
T.M. Lifshits ◽  
V.B. Shmagin

2000 ◽  
Vol 338-342 ◽  
pp. 611-614 ◽  
Author(s):  
C.Q. Chen ◽  
Jan Zeman ◽  
F. Engelbrecht ◽  
Christian Peppermüller ◽  
Reinhard Helbig ◽  
...  

1983 ◽  
Vol 54 (6) ◽  
pp. 3464-3474 ◽  
Author(s):  
M. J. H. van de Steeg ◽  
H. W. H. M. Jongbloets ◽  
J. W. Gerritsen ◽  
P. Wyder

1992 ◽  
Vol 72 (8) ◽  
pp. 3550-3553 ◽  
Author(s):  
H. Navarro ◽  
T. Timusk ◽  
W. R. Datars ◽  
D. C. Houghton

Sign in / Sign up

Export Citation Format

Share Document