Effect of Si‐Ge buffer layer for low‐temperature Si epitaxial growth on Si substrate by rf plasma chemical vapor deposition

S. Suzuki; T. Itoh

doi:10.1063/1.332173

Effect of Si‐Ge buffer layer for low‐temperature Si epitaxial growth on Si substrate by rf plasma chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.332173 ◽

1983 ◽

Vol 54 (3) ◽

pp. 1466-1470 ◽

Cited By ~ 39

Author(s):

S. Suzuki ◽

T. Itoh

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Epitaxial Growth ◽

Buffer Layer ◽

Vapor Deposition ◽

Chemical Vapor ◽

Rf Plasma ◽

Si Substrate ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition

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Low-Temperature Synthesis of Diamond Films in Thermoassisted RF Plasma Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.31.1428 ◽

1992 ◽

Vol 31 (Part 1, No. 5A) ◽

pp. 1428-1431 ◽

Cited By ~ 13

Author(s):

Ichiro Watanabe ◽

Takashi Matsushita ◽

Koujyu Sasahara

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Vapor Deposition ◽

Diamond Films ◽

Chemical Vapor ◽

Rf Plasma ◽

Plasma Chemical ◽

Low Temperature Synthesis ◽

Temperature Synthesis ◽

Plasma Chemical Vapor Deposition

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Low Temperature Synthesis of Diamond Films in Thermoassisted RF Plasma Chemical Vapor Deposition. II

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.792 ◽

1997 ◽

Vol 36 (Part 1, No. 2) ◽

pp. 792-797

Author(s):

Ichiro Watanabe ◽

Koushin Yoshie

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Vapor Deposition ◽

Diamond Films ◽

Chemical Vapor ◽

Rf Plasma ◽

Plasma Chemical ◽

Low Temperature Synthesis ◽

Temperature Synthesis ◽

Plasma Chemical Vapor Deposition

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Low‐Temperature Si Epitaxial Growth by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition

Journal of The Electrochemical Society ◽

10.1149/1.2069532 ◽

1992 ◽

Vol 139 (7) ◽

pp. 1983-1988 ◽

Cited By ~ 3

Author(s):

Naoki Kasai ◽

Nobuhiro Endo

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Epitaxial Growth ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Resonance Plasma

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Epitaxial growth of silicon at low temperature by ultrahigh vacuum electron cyclotron resonance plasma chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.342429 ◽

1988 ◽

Vol 64 (10) ◽

pp. 5183-5188 ◽

Cited By ~ 31

Author(s):

I. Nagai ◽

T. Takahagi ◽

A. Ishitani ◽

H. Kuroda ◽

M. Yoshikawa

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Epitaxial Growth ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Resonance Plasma

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Epitaxial Growth of Silicon by Plasma Chemical Vapor Deposition at a Very Low Temperature of 250°C

Japanese Journal of Applied Physics ◽

10.1143/jjap.26.l951 ◽

1987 ◽

Vol 26 (Part 2, No. 6) ◽

pp. L951-L953 ◽

Cited By ~ 29

Author(s):

Kunihiro Nagamine ◽

Akira Yamada ◽

Makoto Konagai ◽

Kiyoshi Takahashi

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Epitaxial Growth ◽

Vapor Deposition ◽

Chemical Vapor ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Very Low Temperature

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Growth of Polycrystalline GaN on Silicon (001) Substrates by RF Plasma Chemical Vapor Deposition with ZnO Buffer Layer

phys stat sol (a) ◽

10.1002/(sici)1521-396x(199911)176:1<579::aid-pssa579>3.0.co;2-n ◽

1999 ◽

Vol 176 (1) ◽

pp. 579-582 ◽

Cited By ~ 22

Author(s):

D. C. Park ◽

Sz. Fujita ◽

Sg. Fujita

Keyword(s):

Chemical Vapor Deposition ◽

Buffer Layer ◽

Vapor Deposition ◽

Chemical Vapor ◽

Rf Plasma ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Zno Buffer Layer

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Structural properties of polycrystalline silicon films prepared at low temperature by plasma chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.349732 ◽

1991 ◽

Vol 70 (12) ◽

pp. 7374-7381 ◽

Cited By ~ 94

Author(s):

H. Kakinuma ◽

M. Mohri ◽

M. Sakamoto ◽

T. Tsuruoka

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Structural Properties ◽

Vapor Deposition ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Silicon Films ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Polycrystalline Silicon Films

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Self-Organized Microcones Grown on Si Substrate by Microwave Plasma Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.3050 ◽

2008 ◽

Vol 47 (4) ◽

pp. 3050-3052

Author(s):

Masataka Moriya ◽

Yuji Matsumoto ◽

Yoshinao Mizugaki ◽

Tadayuki Kobayashi ◽

Kouichi Usami

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Microwave Plasma ◽

Chemical Vapor ◽

Si Substrate ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Self Organized

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Low Temperature Heteroepitaxial Growth of 3C-SiC on Silicon Substrates by Triode Plasma Chemical Vapor Deposition using Dimethylsilane

Journal of Applied Sciences ◽

10.3923/jas.2008.3523.3527 ◽

2008 ◽

Vol 8 (19) ◽

pp. 3523-3527 ◽

Cited By ~ 3

Author(s):

A.M. Hashim ◽

K. Yasui

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Vapor Deposition ◽

Chemical Vapor ◽

Silicon Substrates ◽

Heteroepitaxial Growth ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition

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Molybdenum contamination in low‐temperature epitaxial silicon films grown by remote plasma chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.118090 ◽

1996 ◽

Vol 69 (1) ◽

pp. 109-111 ◽

Cited By ~ 3

Author(s):

R. Sharma ◽

J. Fretwell ◽

B. Doris ◽

S. Banerjee

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Vapor Deposition ◽

Chemical Vapor ◽

Silicon Films ◽

Epitaxial Silicon ◽

Remote Plasma ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition

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