Gas temperature and electron density profiles in an argon dc microdischarge measured by optical emission spectroscopy

2010 ◽  
Vol 107 (5) ◽  
pp. 053305 ◽  
Author(s):  
Sergey G. Belostotskiy ◽  
Tola Ouk ◽  
Vincent M. Donnelly ◽  
Demetre J. Economou ◽  
Nader Sadeghi
Keyword(s):  
Electron Density ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Optical Emission ◽  
Gas Temperature ◽  
Density Profiles ◽  
Electron Density Profiles

scholarly journals Machine Learning Prediction of Electron Density and Temperature from Optical Emission Spectroscopy in Nitrogen Plasma

Coatings ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1221
Author(s):  
Jun-Hyoung Park ◽  
Ji-Ho Cho ◽  
Jung-Sik Yoon ◽  
Jung-Ho Song
Keyword(s):  
Machine Learning ◽  
Electron Temperature ◽  
Real Time ◽  
Electron Density ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Optical Emission ◽  
Plasma Parameters ◽  
Plasma Nitridation

We present a non-invasive approach for monitoring plasma parameters such as the electron temperature and density inside a radio-frequency (RF) plasma nitridation device using optical emission spectroscopy (OES) in conjunction with multivariate data analysis. Instead of relying on a theoretical model of the plasma emission to extract plasma parameters from the OES, an empirical correlation was established on the basis of simultaneous OES and other diagnostics. Additionally, we developed a machine learning (ML)-based virtual metrology model for real-time Te and ne monitoring in plasma nitridation processes using an in situ OES sensor. The results showed that the prediction accuracy of electron density was 97% and that of electron temperature was 90%. This method is especially useful in plasma processing because it provides in-situ and real-time analysis without disturbing the plasma or interfering with the process.

Gas temperature measurement in CH4/CO2 dielectric-barrier discharges by optical emission spectroscopy

2003 ◽  
Vol 93 (8) ◽  
pp. 4432-4438 ◽  
Author(s):  
Jorge Luque ◽  
Martin Kraus ◽  
Alexander Wokaun ◽  
Ken Haffner ◽  
Ulrich Kogelschatz ◽  
...  
Keyword(s):  
Temperature Measurement ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Optical Emission ◽  
Dielectric Barrier Discharges ◽  
Gas Temperature ◽  
Dielectric Barrier ◽  
Barrier Discharges

Axial uniformity diagnosis of coaxial surface wave linear plasma by optical emission spectroscopy

2021 ◽  
Author(s):  
Wenjin Zhang ◽  
Xinyu Wei ◽  
Longwei Chen ◽  
Qifu Lin ◽  
Yiman Jiang ◽  
...  
Keyword(s):  
Surface Wave ◽  
Electron Density ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Optical Emission ◽  
Electron Excitation ◽  
Gas Pressure ◽  
Excitation Temperature ◽  
Density Spectrum ◽  
Linear Plasma

Abstract The coaxial surface wave linear plasma with preeminent axial uniformity is developed with the 2.45 GHz microwave generator. By optical emission spectroscopy, parameters of the argon linear plasma with a length over 600 mm are diagnosed under gas pressure of 30 Pa and 50 Pa and different microwave powers. The spectral lines of argon and Hβ (486.1 nm) atoms in excited state are observed for estimating electron excitation temperature and electron density. Spectrum bands in 305–310 nm of diatomic OH (A2 Σ+-X2 Πi) radicals are used to determine the molecule rotational temperature. Finally, the axial uniformity of electron density and electron excitation temperature are analyzed emphatically under various conditions. The results prove the distinct optimization of compensation from dual powers input, which can narrow the uniform coefficient of electron density and electron excitation temperature by around 40% and 22% respectively. With the microwave power increasing, the axial uniformity of both electron density and electron excitation temperature performs better. Nevertheless, the fluctuation of electron density along the axial direction appeared with higher gas pressure. The axial uniformity of coaxial surface wave linear plasma could be controlled by pressure and power for a better utilization in material processing.

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