Correlation between the thermoluminescence property and thermal activation energies of the carrier‐capture process during irradiation of thermoluminescence phosphors

1982 ◽  
Vol 53 (7) ◽  
pp. 5216-5223 ◽  
Author(s):  
Toshiyuki Nakajima
Keyword(s):  
Thermal Activation ◽  
Activation Energies ◽  
Capture Process ◽  
Carrier Capture ◽  
Thermoluminescence Property

Thermal activation energies of Mg in GaN:Mg measured by the Hall effect and admittance spectroscopy

2000 ◽  
Vol 88 (5) ◽  
pp. 2564-2569 ◽  
Author(s):  
D. J. Kim ◽  
D. Y. Ryu ◽  
N. A. Bojarczuk ◽  
J. Karasinski ◽  
S. Guha ◽  
...  
Keyword(s):  
Hall Effect ◽  
Thermal Activation ◽  
Activation Energies ◽  
Admittance Spectroscopy

Thermal Activation Energies for the Three Inequivalent Lattice Sites for the BSi Acceptor in 6H-SiC

1997 ◽  
Vol 258-263 ◽  
pp. 691-696 ◽  
Author(s):  
A.O. Evwaraye ◽  
S.R. Smith ◽  
W.C. Mitchel ◽  
H. McD. Hobgood ◽  
G. Augustine ◽  
...  
Keyword(s):  
Thermal Activation ◽  
Activation Energies

Characterization of Semi-insulating SiC

2006 ◽  
Vol 911 ◽  
Author(s):  
Nguyen Tien Son ◽  
Patrick Carlsson ◽  
Björn Magnusson ◽  
Erik Janzén
Keyword(s):  
Vapor Deposition ◽  
Thermal Activation ◽  
Deep Level ◽  
Chemical Vapor ◽  
Activation Energies ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Paramagnetic Resonance ◽  
Electron Paramagnetic

AbstractElectron paramagnetic resonance was used to study defects in high-purity semi-insulating (HPSI) substrates grown by high-temperature chemical vapor deposition and physical vapor transport. Deep level defects associated to different thermal activation energies of the resistivity ranging from ~0.6 eV to ~1.6 eV in HPSI substrates are identified and their roles in carrier compensation processes are discussed. Based on the results obtained in HPSI materials, we discuss the carrier compensation processes in vanadium-doped SI SiC substrates and different activation energies in the material.

Behavior of Deep Defects After Hydrogen Passivation in Znte Studied by Photoluminescence and Photoconductivity

1998 ◽  
Vol 510 ◽  
Author(s):  
S. Bhunia ◽  
D.N. Bose
Keyword(s):  
Thermal Activation ◽  
Hydrogen Plasma ◽  
Minority Carrier Lifetime ◽  
Activation Energies ◽  
Band Edge ◽  
Band Edge Emission ◽  
Hydrogen Passivation ◽  
Deep Acceptor ◽  
Strong Band ◽  
Deep Acceptor Level

AbstractThe effects of hydrogen passivation in undoped p-ZnTe single crystals were studied by photoluminescence (PL) and photoconductivity (PC) measurements. Samples were exposed to r.f hydrogen plasma at 250 °C for different durations. Before passivation PL peaks were observed at 2.06 eV, 1.47 eV, 1.33 eV and 1.06 eV. After 60 minutes exposure, samples showed strong band edge green luminescence at 2.37 eV due to an exciton bound to a Cu acceptor. Further exposure to plasma resulted in disappearance of 2.37eV and 2.34 eV peaks due to damage. In PC studies the dark current was found to decrease by a factor of 70 on 60 minutes passivation. From the temperature dependence of PC gain, the minority carrier lifetime τn, was found to go through a maximum of 4.5 × 10−7 sec at 220 K before passivation. After 60 minutes exposure, τn, remained constant at 4.5 × 10−7 sec for T > 220 K and decreased for T < 220 K. The activation energies of τn, were determined and show marked changes on passivation for T > 220 K. Comparison between PL and PC studies showed that the deep acceptor level OTe responsible for emission at 2.06 eV is passivated giving rise to strong band edge emission at 2.37 eV while emission due to the midgap impurity levels at 1.47, 1.33 and 1.05 eV remained unaffected. The thermal activation energies of the PL peaks have also been determined and allow the construction of a defect energy level diagram for ZnTe.

Comprehensive Monte Carlo simulation of the nonradiative carrier capture process by impurities in semiconductors

1995 ◽  
Vol 77 (5) ◽  
pp. 1998-2005 ◽  
Author(s):  
A. Palma ◽  
J. A. Jiménez‐Tejada ◽  
I. Melchor ◽  
J. A. López‐Villanueva ◽  
J. E. Carceller
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Capture Process ◽  
Carrier Capture ◽  
Impurities In Semiconductors

scholarly journals Электрически активные состояния захвата и переноса заряда, обусловливающие медленную рекомбинацию в кристаллах бромида таллия при низких температурах

2018 ◽  
Vol 52 (2) ◽  
pp. 171
Author(s):  
В. Кажукаускас ◽  
Р. Гарбачаускас ◽  
С. Савицки
Keyword(s):  
Activation Energy ◽  
Electric Field ◽  
Single Crystals ◽  
Applied Electric Field ◽  
Thermal Activation ◽  
Thermal Quenching ◽  
Activation Energies ◽  
Trap States ◽  
Optical Generation ◽  
Stockbarger Method

AbstractTlBr single crystals grown by the Bridgman–Stockbarger method are studied. It is established that frozen-conductivity effects manifest themselves under interband excitation by light at temperatures below 200 K. Herewith, clearly pronounced superlinear dependences of the induced photoconductivity on the strength of the applied electric field manifest themselves. The results of studying thermally stimulated conductivity evidence that these phenomena can be associated with the filling of trap states with thermal activation energies of 0.08–0.12 eV. This state can be removed due to thermal quenching at temperatures of ≳180 K because of the emptying of energy states with an activation energy of 0.63–0.65 eV filled after optical generation.

Characterization of ZnSe:N Using Screening Effects

1995 ◽  
Vol 406 ◽  
Author(s):  
I. Kuskovsky ◽  
G. F. Neumark
Keyword(s):  
Thermal Activation ◽  
Interstitial Site ◽  
Activation Energies ◽  
Free Carrier ◽  
Hall Measurements ◽  
Electrical Data ◽  
Good Agreement

AbstractPhotoluminescence (PL) and Hall measurements allow one to obtain important parameters of semiconductors, such as impurity concentrations, compensation, and activation energies (EA). Usual analyses of such data assume constant EA. However, it is well known that EA depends on free carrier and impurity concentrations, and thus on temperature, due to screening effects. We here analyze literature data on ZnSe:N using screening effects. An observed decrease of EA with temperature (from PL data) had been used to suggest an interstitial site for N. With inclusion of screening, we obtained good agreement with the data, so that the idea of interstitial N is not required. In applying the screening theory to Hall measurements, we obtained lower impurity concentrations than with use of a constant EA. It is also to be noted that we fit both optical and electrical data with this approach. We further suggest that screening is the cause of an observed difference between optically observed and thermal activation energies.

Sign in / Sign up

Export Citation Format

Share Document