Effects of oxide thickness on charge trapping in metal‐nitride‐oxide‐ semiconductor structures

1982 ◽  
Vol 53 (7) ◽  
pp. 5079-5085 ◽  
Author(s):  
Vikram J. Kapoor ◽  
James P. Delatore
Keyword(s):  
Charge Trapping ◽  
Oxide Thickness ◽  
Oxide Semiconductor ◽  
Metal Nitride ◽  
Semiconductor Structures ◽  
Nitride Oxide

Degradation properties in metal‐nitride‐oxide‐semiconductor structures

1981 ◽  
Vol 52 (10) ◽  
pp. 6377-6385 ◽  
Author(s):  
Eiichi Suzuki ◽  
Yutaka Hayashi ◽  
Hisayoshi Yanai
Keyword(s):  
Oxide Semiconductor ◽  
Metal Nitride ◽  
Semiconductor Structures ◽  
Nitride Oxide ◽  
Degradation Properties

A model of degradation mechanisms in metal‐nitride‐oxide‐semiconductor structures

1979 ◽  
Vol 35 (10) ◽  
pp. 790-792 ◽  
Author(s):  
Eiichi Suzuki ◽  
Yutaka Hayashi ◽  
Hisayoshi Yanai
Keyword(s):  
Oxide Semiconductor ◽  
Degradation Mechanisms ◽  
Metal Nitride ◽  
Semiconductor Structures ◽  
Nitride Oxide

Transient conduction in multidielectric silicon–oxide–nitride–oxide semiconductor structures

2001 ◽  
Vol 89 (5) ◽  
pp. 2791-2800 ◽  
Author(s):  
H. Bachhofer ◽  
H. Reisinger ◽  
E. Bertagnolli ◽  
H. von Philipsborn
Keyword(s):  
Silicon Oxide ◽  
Oxide Semiconductor ◽  
Semiconductor Structures ◽  
Transient Conduction ◽  
Nitride Oxide
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