Degradation properties in metal‐nitride‐oxide‐semiconductor structures

Eiichi Suzuki; Yutaka Hayashi; Hisayoshi Yanai

doi:10.1063/1.328581

Degradation properties in metal‐nitride‐oxide‐semiconductor structures

Journal of Applied Physics ◽

10.1063/1.328581 ◽

1981 ◽

Vol 52 (10) ◽

pp. 6377-6385 ◽

Cited By ~ 13

Author(s):

Eiichi Suzuki ◽

Yutaka Hayashi ◽

Hisayoshi Yanai

Keyword(s):

Oxide Semiconductor ◽

Metal Nitride ◽

Semiconductor Structures ◽

Nitride Oxide ◽

Degradation Properties

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Thermally assisted hole tunneling at theAu−Si3N4interface and the energy-band diagram of metal-nitride-oxide-semiconductor structures

Physical Review B ◽

10.1103/physrevb.57.r2081 ◽

1998 ◽

Vol 57 (4) ◽

pp. R2081-R2083 ◽

Cited By ~ 66

Author(s):

V. A. Gritsenko ◽

E. E. Meerson ◽

Yu. N. Morokov

Keyword(s):

Energy Band ◽

Energy Band Diagram ◽

Oxide Semiconductor ◽

Band Diagram ◽

Metal Nitride ◽

Semiconductor Structures ◽

Nitride Oxide

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A simple method of interface‐state reduction in metal‐nitride‐oxide‐semiconductor structures

Journal of Applied Physics ◽

10.1063/1.348376 ◽

1991 ◽

Vol 69 (8) ◽

pp. 4448-4450 ◽

Cited By ~ 1

Author(s):

Yea‐Dean Sheu

Keyword(s):

Interface State ◽

Oxide Semiconductor ◽

Simple Method ◽

Metal Nitride ◽

State Reduction ◽

Semiconductor Structures ◽

Nitride Oxide

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Effects of oxide thickness on charge trapping in metal‐nitride‐oxide‐ semiconductor structures

Journal of Applied Physics ◽

10.1063/1.331340 ◽

1982 ◽

Vol 53 (7) ◽

pp. 5079-5085 ◽

Cited By ~ 7

Author(s):

Vikram J. Kapoor ◽

James P. Delatore

Keyword(s):

Charge Trapping ◽

Oxide Thickness ◽

Oxide Semiconductor ◽

Metal Nitride ◽

Semiconductor Structures ◽

Nitride Oxide

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Carrier conduction and trapping in metal‐nitride‐oxide‐semiconductor structures

Journal of Applied Physics ◽

10.1063/1.330442 ◽

1982 ◽

Vol 53 (12) ◽

pp. 8880-8885 ◽

Cited By ~ 45

Author(s):

Eiichi Suzuki ◽

Yutaka Hayashi

Keyword(s):

Oxide Semiconductor ◽

Metal Nitride ◽

Semiconductor Structures ◽

Nitride Oxide

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Compensation of Radiation Effects by Charge Transport in Metal‐Nitride‐Oxide‐Semiconductor Structures

Applied Physics Letters ◽

10.1063/1.1653817 ◽

1971 ◽

Vol 19 (3) ◽

pp. 49-51 ◽

Cited By ~ 17

Author(s):

J. R. Cricchi ◽

D. F. Barbe

Keyword(s):

Charge Transport ◽

Radiation Effects ◽

Oxide Semiconductor ◽

Metal Nitride ◽

Semiconductor Structures ◽

Nitride Oxide

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Charge storage and distribution in the nitride layer of the metal‐nitride‐oxide semiconductor structures

Journal of Applied Physics ◽

10.1063/1.328495 ◽

1981 ◽

Vol 52 (1) ◽

pp. 311-319 ◽

Cited By ~ 37

Author(s):

V. J. Kapoor ◽

R. A. Turi

Keyword(s):

Nitride Layer ◽

Oxide Semiconductor ◽

Charge Storage ◽

Metal Nitride ◽

Semiconductor Structures ◽

Nitride Oxide

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Investigation of the resolution of metal-nitride-oxide-semiconductor structures in recording and reading of optical information

Soviet Journal of Quantum Electronics ◽

10.1070/qe1975v004n10abeh011740 ◽

1975 ◽

Vol 4 (10) ◽

pp. 1279-1280

Author(s):

A B Kravchenko ◽

A F Plotnikov ◽

V N Seleznev ◽

D N Tokarchuk ◽

V É Shubin

Keyword(s):

Oxide Semiconductor ◽

Optical Information ◽

Metal Nitride ◽

Semiconductor Structures ◽

Nitride Oxide

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A model of degradation mechanisms in metal‐nitride‐oxide‐semiconductor structures

Applied Physics Letters ◽

10.1063/1.90979 ◽

1979 ◽

Vol 35 (10) ◽

pp. 790-792 ◽

Cited By ~ 6

Author(s):

Eiichi Suzuki ◽

Yutaka Hayashi ◽

Hisayoshi Yanai

Keyword(s):

Oxide Semiconductor ◽

Degradation Mechanisms ◽

Metal Nitride ◽

Semiconductor Structures ◽

Nitride Oxide

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Transient conduction in multidielectric silicon–oxide–nitride–oxide semiconductor structures

Journal of Applied Physics ◽

10.1063/1.1343892 ◽

2001 ◽

Vol 89 (5) ◽

pp. 2791-2800 ◽

Cited By ~ 105

Author(s):

H. Bachhofer ◽

H. Reisinger ◽

E. Bertagnolli ◽

H. von Philipsborn

Keyword(s):

Silicon Oxide ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Transient Conduction ◽

Nitride Oxide

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Use of a Metal-Nitride-Oxide-Semiconductor as the Detector for a Radiation Dosimeter

IEEE Transactions on Nuclear Science ◽

10.1109/tns.1978.4329581 ◽

1978 ◽

Vol 25 (6) ◽

pp. 1613-1618 ◽

Cited By ~ 5

Author(s):

R. G. Fraass ◽

R. W. Tallon

Keyword(s):

Oxide Semiconductor ◽

Metal Nitride ◽

Nitride Oxide

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