High speed response of a GaAs metal‐semiconductor field‐effect transistor to electron‐beam excitation

1982 ◽  
Vol 53 (5) ◽  
pp. 3873-3877 ◽  
Author(s):  
L. D. Flesner ◽  
N. M. Davis ◽  
H. H. Wieder
Keyword(s):  
Electron Beam ◽  
Field Effect ◽  
High Speed ◽  
Field Effect Transistor ◽  
Electron Beam Excitation ◽  
Effect Transistor ◽  
Beam Excitation ◽  
Speed Response

An infrared optical field effect transistor with high speed response

1996 ◽  
Vol 68 (3) ◽  
pp. 299-300 ◽  
Author(s):  
F. Y. Chen ◽  
Y. K. Fang ◽  
M. J. Sun ◽  
Jiann‐Ruey Chen
Keyword(s):  
Field Effect ◽  
High Speed ◽  
Field Effect Transistor ◽  
Optical Field ◽  
Effect Transistor ◽  
Speed Response

High-speed GaAs metal gate semiconductor field effect transistor structure grown on a composite Ge∕GexSi1−x∕Si substrate

2007 ◽  
Vol 101 (8) ◽  
pp. 084501 ◽  
Author(s):  
Guang-Li Luo ◽  
Yen-Chang Hsieh ◽  
Edward Yi Chang ◽  
M. H. Pilkuhn ◽  
Chao-Hsin Chien ◽  
...  
Keyword(s):  
Field Effect ◽  
High Speed ◽  
Field Effect Transistor ◽  
Si Substrate ◽  
Metal Gate ◽  
Transistor Structure ◽  
Effect Transistor
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