An infrared optical field effect transistor with high speed response

F. Y. Chen; Y. K. Fang; M. J. Sun; Jiann‐Ruey Chen

doi:10.1063/1.116065

An infrared optical field effect transistor with high speed response

Applied Physics Letters ◽

10.1063/1.116065 ◽

1996 ◽

Vol 68 (3) ◽

pp. 299-300 ◽

Cited By ~ 5

Author(s):

F. Y. Chen ◽

Y. K. Fang ◽

M. J. Sun ◽

Jiann‐Ruey Chen

Keyword(s):

Field Effect ◽

High Speed ◽

Field Effect Transistor ◽

Optical Field ◽

Effect Transistor ◽

Speed Response

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High speed response of a GaAs metal‐semiconductor field‐effect transistor to electron‐beam excitation

Journal of Applied Physics ◽

10.1063/1.331087 ◽

1982 ◽

Vol 53 (5) ◽

pp. 3873-3877 ◽

Cited By ~ 7

Author(s):

L. D. Flesner ◽

N. M. Davis ◽

H. H. Wieder

Keyword(s):

Electron Beam ◽

Field Effect ◽

High Speed ◽

Field Effect Transistor ◽

Electron Beam Excitation ◽

Effect Transistor ◽

Beam Excitation ◽

Speed Response

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A New High Speed Carbon Nanotube Field Effect Transistor-Based Structure for 4-to-2 Compressor Cell

Journal of Computational and Theoretical Nanoscience ◽

10.1166/jctn.2016.4542 ◽

2016 ◽

Vol 13 (1) ◽

pp. 1006-1012 ◽

Cited By ~ 4

Author(s):

Mehdi Bagherizadeh ◽

Mohammad Eshghi

Keyword(s):

Carbon Nanotube ◽

Field Effect ◽

High Speed ◽

Field Effect Transistor ◽

Effect Transistor

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Low Leakage High Speed Carbon-Nano Tube Field Effect Transistor Based Look Up Table

2008 First International Conference on Emerging Trends in Engineering and Technology ◽

10.1109/icetet.2008.92 ◽

2008 ◽

Author(s):

Kureshi Abdul Kadir ◽

Mohd. Hasan

Keyword(s):

Field Effect ◽

High Speed ◽

Field Effect Transistor ◽

Low Leakage ◽

Look Up Table ◽

Effect Transistor ◽

Carbon Nano Tube

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A high-speed silicon-based few-electron memory with metal– oxide–semiconductor field-effect transistor gain element

Journal of Applied Physics ◽

10.1063/1.373584 ◽

2000 ◽

Vol 87 (12) ◽

pp. 8594-8603 ◽

Cited By ~ 14

Author(s):

Andrew C. Irvine ◽

Zahid A. K. Durrani ◽

Haroon Ahmed

Keyword(s):

Metal Oxide ◽

Field Effect ◽

High Speed ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Silicon Based

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Complementary Metal Oxide Semiconductor Image Sensor Using a Gate/Body-Tied P-Channel Metal Oxide Semiconductor Field Effect Transistor-Type Photodetector for High-Speed Binary Operation

Sensors and Materials ◽

10.18494/sam.2018.1643 ◽

2018 ◽

pp. 129 ◽

Cited By ~ 1

Keyword(s):

Metal Oxide ◽

Field Effect ◽

High Speed ◽

Field Effect Transistor ◽

Binary Operation ◽

Complementary Metal Oxide Semiconductor ◽

Image Sensor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

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Modeling and Simulation of High-κ Gate GaSb Nanowire Field Effect Transistor for Ultra High Speed and Low Power Applications

ECS Meeting Abstracts ◽

10.1149/ma2011-01/18/1211 ◽

2011 ◽

Keyword(s):

Low Power ◽

Modeling And Simulation ◽

Field Effect ◽

High Speed ◽

Field Effect Transistor ◽

Ultra High Speed ◽

Effect Transistor

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Optimized Novel Indium Antimonide Quantum Well Field Effect Transistor for High-Speed and Low Power Logic Applications

ECS Meeting Abstracts ◽

10.1149/ma2015-02/18/812 ◽

2015 ◽

Keyword(s):

Quantum Well ◽

Low Power ◽

Indium Antimonide ◽

Field Effect ◽

High Speed ◽

Field Effect Transistor ◽

Well Field ◽

Effect Transistor ◽

Low Power Logic

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High-speed GaAs metal gate semiconductor field effect transistor structure grown on a composite Ge∕GexSi1−x∕Si substrate

Journal of Applied Physics ◽

10.1063/1.2722245 ◽

2007 ◽

Vol 101 (8) ◽

pp. 084501 ◽

Cited By ~ 20

Author(s):

Guang-Li Luo ◽

Yen-Chang Hsieh ◽

Edward Yi Chang ◽

M. H. Pilkuhn ◽

Chao-Hsin Chien ◽

...

Keyword(s):

Field Effect ◽

High Speed ◽

Field Effect Transistor ◽

Si Substrate ◽

Metal Gate ◽

Transistor Structure ◽

Effect Transistor

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Optical field effect transistor with an indium tin oxide gate electrode

10.1117/12.250937 ◽

1996 ◽

Author(s):

J. B. Fodje ◽

D. Mukherjee ◽

Cyril A. Hogarth

Keyword(s):

Tin Oxide ◽

Indium Tin Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Optical Field ◽

Gate Electrode ◽

Effect Transistor

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High Speed Multiple Valued Logic Full Adder Using Carbon Nano Field Effect Transistor

International Journal of VLSI Design & Communication Systems ◽

10.5121/vlsic.2011.2101 ◽

2011 ◽

Vol 2 (1) ◽

pp. 1-9 ◽

Cited By ~ 4

Author(s):

Ashkan Khatir ◽

Shaghayegh Abdolahzadegan ◽

Iman Mahmoudi

Keyword(s):

Field Effect ◽

High Speed ◽

Field Effect Transistor ◽

Full Adder ◽

Multiple Valued Logic ◽

Effect Transistor

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