Surface reconstructions of cubic gallium nitride (001) grown by radio frequency nitrogen plasma molecular beam epitaxy under gallium-rich conditions

2006 ◽  
Vol 100 (8) ◽  
pp. 083516 ◽  
Author(s):  
Muhammad B. Haider ◽  
Rong Yang ◽  
Costel Constantin ◽  
Erdong Lu ◽  
Arthur R. Smith ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Molecular Beam Epitaxy ◽  
Radio Frequency ◽  
Molecular Beam ◽  
Nitrogen Plasma ◽  
Surface Reconstructions

1.55μm GaAs∕GaNAsSb∕GaAs optical waveguides grown by radio frequency nitrogen plasma-assisted molecular beam epitaxy

2008 ◽  
Vol 92 (11) ◽  
pp. 113513 ◽  
Author(s):  
K. H. Tan ◽  
S. F. Yoon ◽  
W. K. Loke ◽  
S. Wicaksono ◽  
Z. Xu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Radio Frequency ◽  
Optical Waveguides ◽  
Molecular Beam ◽  
Nitrogen Plasma

scholarly journals High responsivity GaNAsSb p-i-n photodetectors at 13µm grown by radio-frequency nitrogen plasma-assisted molecular beam epitaxy

2008 ◽  
Vol 16 (11) ◽  
pp. 7720 ◽  
Author(s):  
K. H. Tan ◽  
S. F. Yoon ◽  
W. K. Loke ◽  
S. Wicaksono ◽  
T. K. Ng ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Radio Frequency ◽  
Molecular Beam ◽  
Nitrogen Plasma ◽  
High Responsivity

Growth of gallium nitride on silicon by molecular beam epitaxy incorporating a chromium nitride interlayer

2012 ◽  
Vol 511 (1) ◽  
pp. 1-4 ◽  
Author(s):  
Kuang-Wei Liu ◽  
Sheng-Joue Young ◽  
Shoou-Jinn Chang ◽  
Tao-Hung Hsueh ◽  
Hung Hung ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Chromium Nitride

Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy

2018 ◽  
Vol 52 (12) ◽  
pp. 1529-1533 ◽  
Author(s):  
A. M. Mizerov ◽  
S. N. Timoshnev ◽  
M. S. Sobolev ◽  
E. V. Nikitina ◽  
K. Yu. Shubina ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Nitrogen Plasma ◽  
Initial Stage

THE STUDY OF Pd SCHOTTKY CONTACT ON POROUS GaN FOR UV METAL–SEMICONDUCTOR–METAL (MSM) PHOTODETECTORS

2007 ◽  
Vol 16 (04) ◽  
pp. 497-503 ◽  
Author(s):  
L. S. CHUAH ◽  
Z. HASSAN ◽  
H. ABU HASSAN
Keyword(s):  
Molecular Beam Epitaxy ◽  
Tensile Stress ◽  
Molecular Beam ◽  
Schottky Contact ◽  
Nitrogen Plasma ◽  
Porous Sample ◽  
Optical Studies ◽  
High Quality ◽  
Metal Semiconductor Metal ◽  
Msm Photodetectors

High quality unintentionally doped n-type GaN layers were grown on Si (111) substrate using AlN (about 200 nm) as buffer layer by radio frequency (RF) nitrogen plasma-assisted molecular beam epitaxy (MBE). This paper presents the structural and optical studies of porous GaN sample compared to the corresponding as-grown GaN. Metal–semiconductor–metal (MSM) photodiode was fabricated on the samples. For as-grown GaN-based MSM, the detector shows a sharp cut-off wavelength at 362 nm, with a maximum responsivity of 0.254 A/W achieved at 360 nm. For porous GaN MSM detector, a sharp cut-off wavelength at 360 nm with a maximum responsivity of 0.655 A/W was achieved at 359 nm. Both the detectors show a little decrease in responsivity in the UV spectral region. The MSM photodiode based on porous GaN shows enhanced (2×) magnitude of responsivity relative to the as-grown GaN MSM photodiode. Enhancement of responsivity can be attributed to the relaxation of tensile stress and reduction of surface pit density in the porous sample.

Piezoelectric Coefficients of Aluminum Nitride and Gallium Nitride

1999 ◽  
Vol 572 ◽  
Author(s):  
C. M. Lueng ◽  
H. L. W. Chan ◽  
W. K. Fong ◽  
C. Surya ◽  
C. L. Choy
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Aluminum Nitride ◽  
Composite Film ◽  
High Frequency ◽  
Molecular Beam ◽  
Silicon Substrates ◽  
Heterodyne Interferometer

ABSTRACTAluminum nitride (AlN) and gallium nitride (GaN) thin films have potential uses in high temperature, high frequency (e.g. microwave) acoustic devices. In this work, the piezoelectric coefficients of wurtzite AlN and GaN/AlN composite film grown on silicon substrates by molecular beam epitaxy were measured by a Mach-Zehnder type heterodyne interferometer. The effects of the substrate on the measured coefficients are discussed.

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