Dielectric characterization of NixCo1−xFe2O4 nanocrystals thin film over a broad frequency range (1 MHz–3 GHz)

2010 ◽  
Vol 107 (4) ◽  
pp. 044102 ◽  
Author(s):  
Harun Bayrakdar ◽  
Kadir Esmer
Keyword(s):  
Thin Film ◽  
Frequency Range ◽  
Dielectric Characterization ◽  
Broad Frequency Range

Dielectric characterization of transparent epitaxial Ga2O3 thin film on n-GaN∕Al2O3 prepared by pulsed laser deposition

2006 ◽  
Vol 89 (18) ◽  
pp. 182906 ◽  
Author(s):  
Sang-A Lee ◽  
Jae-Yeol Hwang ◽  
Jong-Pil Kim ◽  
Se-Young Jeong ◽  
Chae-Ryong Cho
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Dielectric Characterization ◽  
Ga2o3 Thin Film

scholarly journals Development of a Microfluidic GHz Impedance Cytometer

2013 ◽  
Vol 80 (12) ◽  
Author(s):  
Niels Haandbæk ◽  
Sebastian C. Bürgel ◽  
Flavio Heer ◽  
Andreas Hierlemann
Keyword(s):  
Dielectric Properties ◽  
Chinese Hamster Ovary ◽  
Cho Cells ◽  
Single Cells ◽  
Chinese Hamster ◽  
Frequency Range ◽  
Cell Nuclei ◽  
Dielectric Characterization ◽  
The Difference

AbstractThis article presents a novel microfluidic impedance cytometer enabling dielectric characterization of single cells at frequencies up to 500 MHz. The dielectric properties of cells at lower frequencies contain information about their size and membrane capacitance. The increased frequency range of the presented cytometer potentially allows for characterization of intracellular components, such as vacuoles or the cell nuclei. We demonstrate the overall capabilities of the cytometer through discrimination of polystyrene beads from Chinese hamster ovary (CHO) cells. The discrimination is based on the difference in dielectric properties at frequencies up to 500 MHz.

Dielectric dispersion of BiFeO3 thin film over a broad frequency range (100 Hz–10 GHz)

2009 ◽  
Vol 94 (2) ◽  
pp. 022907 ◽  
Author(s):  
Xiao-Yu Zhang ◽  
Qing Song ◽  
Feng Xu ◽  
C. K. Ong
Keyword(s):  
Thin Film ◽  
Dielectric Dispersion ◽  
Bifeo3 Thin Film ◽  
Frequency Range ◽  
Broad Frequency Range

Bulk and In-Circuit Dielectric Characterization of LTCC Tape Systems Through Millimeter Wave Frequency Range

2011 ◽  
Vol 2011 (1) ◽  
pp. 000740-000746 ◽  
Author(s):  
Bradley Thrasher ◽  
Deepukumar Nair ◽  
James Parisi ◽  
Glenn Oliver ◽  
Michael A. Smith
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Millimeter Wave ◽  
Design Stage ◽  
Frequency Range ◽  
Dielectric Thickness ◽  
Dielectric Characterization ◽  
Wide Range ◽  
Comprehensive Characterization

Low Temperature Co-fired Ceramic (LTCC) material systems offer a highly versatile microwave and millimeter wave packaging platform. Extremely low microwave loss, excellent control of dielectric constant, uniform dielectric thickness, non-existent water absorption leading to very high hermeticity, ability to support multilayer structure leading to 3-dimensional packaging, ability to embed passive functions within the tape layers, availability of a wide range of metallizations, etc. are some of the key advantages of LTCC for microwave packaging. One of the important parameters which needs to be determined at the very early stages of circuit designs are the dielectric properties - dielectric constant and loss tangent, both of which are functions of frequency. These properties need to be known accurately over the entire frequency range of operation for the circuit. For LTCC based designs, the use of dielectric constant of bulk material can lead to deviations between the performance expected at the design stage and for the fabricated circuit. Such deviations are a significant concern for broadband circuits as well as for circuits with sharp resonant behavior such as filters. One of the significant sources of deviation between bulk LTCC and “in-circuit” dielectric constant is the nature of the thick film metallizations used in LTCC technology. Work described here is a comprehensive characterization of three DuPont™ GreenTape™ LTCC systems 951, 943, and 9K7 - in the frequency range 10 to 70 GHz. Both bulk and “in-circuit” dielectric properties with silver and gold metallizations are studied to quantify the deviations in dielectric properties. A Fabry-Perot open resonator technique is used for the bulk characterization while printed ring resonators are used for the in-circuit characterization. This comprehensive characterization will provide key design data for LTCC designers in the 10 – 70 GHz frequency range.

Structure, ferroelectric and dielectric characterization of Mn-doped 0.938(Bi0.5Na0.5)TiO3–0.062BaTiO3 thin film

2016 ◽  
Vol 42 (15) ◽  
pp. 17839-17842 ◽  
Author(s):  
Zhijian Wang ◽  
Junyuan Wang ◽  
Wenhua Du ◽  
Jiping Zhang ◽  
Zhiqiang Zeng ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Characterization ◽  
Mn Doped

Dielectric characterization of macroporous thick silicon films in the frequency range 1 Hz-1 MHz

2008 ◽  
Vol 5 (12) ◽  
pp. 3597-3600 ◽  
Author(s):  
M. Theodoropoulou ◽  
D. N. Pagonis ◽  
A. G. Nassiopoulou ◽  
C. A. Krontiras ◽  
S. N. Georga
Keyword(s):  
Silicon Films ◽  
Frequency Range ◽  
Dielectric Characterization

scholarly journals RF-Characterization of HZO Thin Film Varactors

Crystals ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 980
Author(s):  
Sukhrob Abdulazhanov ◽  
Quang Huy Le ◽  
Dang Khoa Huynh ◽  
Defu Wang ◽  
Maximilian Lederer ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Loss ◽  
Dielectric Permittivity ◽  
Electric Field ◽  
Zirconium Oxide ◽  
Electric Field Distribution ◽  
Frequency Range ◽  
Microwave Characterization ◽  
Reflectivity Method

A microwave characterization at UHF band of a ferroelectric hafnium zirconium oxide metal-ferroelectric-metal (MFM) capacitors for varactor applications has been performed. By using an impedance reflectivity method, a complex dielectric permittivity was obtained at frequencies up to 500 MHz. Ferroelectric Hf0.5Zr0.5O2 of 10 nm thickness has demonstrated a stable permittivity switching in the whole frequency range. A constant increase of the calculated dielectric loss is observed, which is shown to be an effect of electric field distribution on highly resistive titanium nitride (TiN) thin film electrodes. The C-V characteristics of a “butterfly” shape was also extracted, where the varactors exhibited a reduction of capacitance tunability from 18.6% at 10 MHz to 15.4% at 500 MHz.

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