Dielectric dispersion of BiFeO3 thin film over a broad frequency range (100 Hz–10 GHz)

2009 ◽  
Vol 94 (2) ◽  
pp. 022907 ◽  
Author(s):  
Xiao-Yu Zhang ◽  
Qing Song ◽  
Feng Xu ◽  
C. K. Ong
Keyword(s):  
Thin Film ◽  
Dielectric Dispersion ◽  
Bifeo3 Thin Film ◽  
Frequency Range ◽  
Broad Frequency Range

Analogue Memory Effects in Metal/ a-Si:H /Metal Thin Film Structures

1993 ◽  
Vol 297 ◽  
Author(s):  
A.J. Snell ◽  
J. Hajto ◽  
M.J. Rose ◽  
I.S. Osborne ◽  
A. Holmes ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Memory Effects ◽  
Ac Conductivities ◽  
Frequency Range ◽  
Broad Frequency Range ◽  
Metal Thin Film ◽  
Silicon Structures ◽  
Memory States

The ac conductivities of non-volatile analogue memory states are measured in electro-formed Cr/p+/V amorphous silicon structures for a broad frequency range (from 0.1 Hz to 32 MHz). The results suggest that the memory action is associated with electronic processes.

Preparation of La-doped BiFeO3 Thin Film and Its Photovoltaic Properties

2013 ◽  
Vol 28 (4) ◽  
pp. 436-440 ◽  
Author(s):  
Yi-Jun XIE ◽  
Yi-Ping GUO ◽  
Wen DONG ◽  
Bing GUO ◽  
Hua LI ◽  
...  
Keyword(s):  
Thin Film ◽  
Bifeo3 Thin Film ◽  
Photovoltaic Properties ◽  
La Doped

scholarly journals Temperature controlled c axis elongated low symmetry phase BiFeO3 thin film on STO substrate

AIP Advances ◽  
2013 ◽  
Vol 3 (1) ◽  
pp. 012110 ◽  
Author(s):  
Peng Ren ◽  
Soon Khuen Cho ◽  
Peng Liu ◽  
Lu You ◽  
Xi Zou ◽  
...  
Keyword(s):  
Thin Film ◽  
Bifeo3 Thin Film ◽  
Symmetry Phase ◽  
Temperature Controlled ◽  
Low Symmetry

Design of a Variable Thickness Plate to Focus Bending Waves

2012 ◽  
Author(s):  
Noah H. Schiller ◽  
Sz-Chin Steven Lin ◽  
Randolph H. Cabell ◽  
Tony Jun Huang
Keyword(s):  
Numerical Simulations ◽  
Thin Plate ◽  
Traveling Waves ◽  
Variable Thickness ◽  
Focal Point ◽  
Frequency Range ◽  
Additional Energy ◽  
Broad Frequency Range ◽  
Bending Waves ◽  
Energy Dissipated

This paper describes the design of a thin plate whose thickness is tailored in order to focus bending waves to a desired location on the plate. Focusing is achieved by smoothly varying the thickness of the plate to create a type of lens, which focuses structure-borne energy. Damping treatment can then be positioned at the focal point to efficiently dissipate energy with a minimum amount of treatment. Numerical simulations of both bounded and unbounded plates show that the design is effective over a broad frequency range, focusing traveling waves to the same region of the plate regardless of frequency. This paper also quantifies the additional energy dissipated by local damping treatment installed on a variable thickness plate relative to a uniform plate.

Effects of Annealing Temperature on Morphology and Dielectric Property of BiFeO3 Films

2012 ◽  
Vol 512-515 ◽  
pp. 1736-1739
Author(s):  
Li Li Zhang ◽  
Guo Qiang Tan ◽  
Meng Cheng ◽  
Hui Jun Ren ◽  
Ao Xia
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Property ◽  
Annealing Temperature ◽  
Raw Materials ◽  
Sol Gel ◽  
Frequency Range ◽  
Annealing Temperatures ◽  
Pure Phase ◽  
Lower Loss

Fe(NO3)3•9H2O and Bi(NO3)3•5H2O were used as raw materials. BiFeO3 thin films were prepared by sol-gel method. The effects of annealing temperatures on the morphology and dielectric property of the thin films were studied. XRD results show that the multi-crystal thin films with pure phase are obtained when annealed at 500°C and 550°C. But annealing at 580°C will lead to the appearance of Bi2.46Fe5O12 phase.AFM images show that as the increase of annealing temperatures the surface toughness of the thin film is decreased, but the surface undulation of the thin films is decreased gradually. Within the frequency range of 1KHz~1MHz, the dielectric constant of BiFeO3 thin films is kept over 125 and it does not change very much from 500°C to 580°C. Annealed at 550°C, the BiFeO3 thin films with the lower loss are obtained. At 1MHz, the dielectric loss is 0.12.

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