Modeling of cw laser annealing of multilayer structures

1982 ◽  
Vol 53 (11) ◽  
pp. 7545-7550 ◽  
Author(s):  
I. D. Calder ◽  
R. Sue
Keyword(s):  
Laser Annealing ◽  
Multilayer Structures ◽  
Cw Laser

Modelling of CW Laser Annealing of Multilayer Structures

1981 ◽  
Vol 4 ◽  
Author(s):  
I.D. Calder ◽  
R. Sue ◽  
Emad-Eldin A.A. Aly
Keyword(s):  
Phase Transition ◽  
Thermal Conductivity ◽  
Optical Properties ◽  
Steady State ◽  
Temperature Distribution ◽  
Thermal Model ◽  
Laser Annealing ◽  
Multilayer Structures ◽  
Cw Laser ◽  
Arbitrary Thickness

ABSTRACTA thermal model is developed for cw laser annealing of multilayer structures. Each layer has arbitrary thickness, thermal conductivity and optical properties. Steady state conditions with no phase transition are assumed. A procedure is presented for obtaining the temperature distribution in any system and explicit integral expressions are developed for the two and three layer cases. Results are calculated for the Si/glass and Si/SiO2 /Si systems.

scholarly journals A comparison between furnace and cw laser annealing of a-Si : evidence of different crystallization states

1982 ◽  
Vol 17 (12) ◽  
pp. 783-786 ◽  
Author(s):  
D. Bensahel ◽  
G. Auvert ◽  
Y. Pauleau ◽  
J.C. Pfister
Keyword(s):  
Laser Annealing ◽  
Cw Laser

Optical, Structural and Electrical Characteristics of Explosively Crystallized Si Thin Films on Glass Substrates

1981 ◽  
Vol 4 ◽  
Author(s):  
G. Auvert ◽  
D. Bensahel ◽  
A. Perio ◽  
F. Morin ◽  
G.A. Rozgonyi ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Laser Annealing ◽  
The State ◽  
Electrical Characteristics ◽  
Glass Substrates ◽  
Explosive Crystallization ◽  
Cw Laser ◽  
Structural And Electrical Properties ◽  
Si Films

ABSTRACTExplosive Crystallization occurs in cw laser annealing on a-Si films deposited on glass substrates at laser scan speeds higher than 30 cm/sec. Optical, structural and electrical properties of the crystallized films at various laser scan speeds confirm the existence of two kinds of explosive growth depending on the state of crystallinity of the starting material.

CW laser annealing of boron implanted polycrystalline silicon

1985 ◽  
Vol 28 (4) ◽  
pp. 339-344 ◽  
Author(s):  
S. Peterström ◽  
G. Holmén ◽  
G. Alestig
Keyword(s):  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Cw Laser

CW Laser Annealing Of Ion-Implanted Silicon

1980 ◽  
Author(s):  
L. D. Hess ◽  
R. A. Forber ◽  
S. A. Kokorowski ◽  
G. L. Olson
Keyword(s):  
Laser Annealing ◽  
Cw Laser ◽  
Ion Implanted

Aligned, Coexisting Liquid and Solid Regions in Pulsed and CW Laser Annealing of Si

1982 ◽  
Vol 13 ◽  
Author(s):  
R. J. Nemanich ◽  
D. K. Biegelsen ◽  
W. G. Hawkins
Keyword(s):  
Surface Topography ◽  
Crystallization Process ◽  
Laser Annealing ◽  
Annealing Process ◽  
Temperature Evolution ◽  
Lattice Temperature ◽  
Cw Laser ◽  
Si Films ◽  
Quartz Substrates

ABSTRACTAligned, coexisting liquid and solid regions are observed in cw laser annealing of polycrystalline Si films on quartz substrates. These stripe patterns are the precursors of surface topography that exists after cooling. It is proposed that a similar situation exists in the pulse annealing process. A calculation of the temperature evolution which assumes stripe symmetry and kinetic restraints of the crystallization process has been carried out. These calculations indicate a lattice temperature of between 1100 and 1300 K, 10 nsec after the sample has fully solidified.

A comparison of furnace annealing and CW laser annealing of Yb+implants in CdTe

1987 ◽  
Vol 102 (1-4) ◽  
pp. 69-82
Author(s):  
D. Wood ◽  
D. Shaw ◽  
F. J. Bryant
Keyword(s):  
Laser Annealing ◽  
Furnace Annealing ◽  
Cw Laser

Solid-Phase-Epitaxial Growth of Ion Implanted Silicon Using CW Laser and Electron Beam Annealing

1982 ◽  
Vol 13 ◽  
Author(s):  
J. Narayan ◽  
O. W. Holland ◽  
G. L. Olson
Keyword(s):  
Laser Annealing ◽  
Solid Phase ◽  
Furnace Annealing ◽  
Plan View ◽  
Dopant Segregation ◽  
Cw Laser ◽  
Retrograde Solubility ◽  
Section Electron ◽  
Residual Damage ◽  
Section Electron Microscopy

ABSTRACTThe nature of residual damage in As+, Sb+, and In+ implanted silicon after CW laser and e− beam annealing has been studied using plan-view and cross-section electron microscopy. Lattice location of implanted atoms and their concentrations were determined by Rutherford backscattering and channeling techniques. Maximum substitutional concentrations achieved by furnace annealing in a temperature range of 500–600°C have been previously reported [1] and greatly exceeded the retrograde solubility limits for all dopants studied. Higher temperatures and SPE growth rates characteristic of electron or cw laser annealing did not lead to greater incorporation of dopant within the lattice and often resulted in dopant precipitation. Dopant segregation at the surface was sometimes observed at higher temperatures.

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