Effect of Oxygen Plasma Treatment on p-Type Electrical Properties of Amorphous La2NiO4+δ Thin Films

2015 ◽  
Vol 10 (4) ◽  
pp. 475-479 ◽  
Author(s):  
Dang-Hoang Hop ◽  
Young-Woo Heo ◽  
Jeong-Joo Kim ◽  
Soo-Young Park ◽  
Inn-Kyu Kang ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Plasma Treatment ◽  
Oxygen Plasma ◽  
Oxygen Plasma Treatment ◽  
Effect Of Oxygen

Effect of oxygen plasma treatment on bonding states for columnar structured a-CN thin films prepared by reactive sputtering

2009 ◽  
Vol 518 (5) ◽  
pp. 1512-1516 ◽  
Author(s):  
Masami Aono ◽  
Shunsuke Kikuchi ◽  
Nobuaki Kitazawa ◽  
Yoshihisa Watanabe
Keyword(s):  
Thin Films ◽  
Plasma Treatment ◽  
Oxygen Plasma ◽  
Reactive Sputtering ◽  
Oxygen Plasma Treatment ◽  
Effect Of Oxygen

Effect of Oxygen Plasma Treatment on Monolayer Self-assembled SiO2 Nanosphere Thin Films on GaAs Surface

2020 ◽  
Vol 41 (3) ◽  
pp. 253-258
Author(s):  
王智栋 WANG Zhi-dong ◽  
刘 云 LIU Yun ◽  
彭新村 PENG Xin-cun ◽  
邹继军 ZOU Ji-jun ◽  
朱志甫 ZHU Zhi-fu ◽  
...  
Keyword(s):  
Thin Films ◽  
Plasma Treatment ◽  
Oxygen Plasma ◽  
Gaas Surface ◽  
Oxygen Plasma Treatment ◽  
Self Assembled ◽  
Effect Of Oxygen

Effect of Oxygen Plasma Treatment on Characteristics of TiO$_{2}$ Photodetectors

2011 ◽  
Vol 11 (11) ◽  
pp. 3031-3035 ◽  
Author(s):  
W. S. Shih ◽  
S. J. Young ◽  
L. W. Ji ◽  
W. Water ◽  
T. H. Meen ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Oxygen Plasma ◽  
Oxygen Plasma Treatment ◽  
Effect Of Oxygen

Effect of oxygen plasma treatment on performance of ZnO based dye sensitized solar cells

2017 ◽  
Vol 724 ◽  
pp. 348-352 ◽  
Author(s):  
Shubhangi Khadtare ◽  
Avinash S. Bansode ◽  
V.L. Mathe ◽  
Nabeen K. Shrestha ◽  
Chinna Bathula ◽  
...  
Keyword(s):  
Solar Cells ◽  
Plasma Treatment ◽  
Oxygen Plasma ◽  
Dye Sensitized Solar Cells ◽  
Oxygen Plasma Treatment ◽  
Dye Sensitized ◽  
Effect Of Oxygen ◽  
Sensitized Solar Cells

scholarly journals Performance Enhancement of Electrospun IGZO-Nanofiber-Based Field-Effect Transistors with High-k Gate Dielectrics through Microwave Annealing and Postcalcination Oxygen Plasma Treatment

Nanomaterials ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 1804 ◽  
Author(s):  
Seong-Kun Cho ◽  
Won-Ju Cho
Keyword(s):  
Electrical Properties ◽  
Plasma Treatment ◽  
Field Effect ◽  
Oxygen Plasma ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Oxygen Plasma Treatment ◽  
Calcination Process ◽  
Microwave Annealing ◽  
High K

We investigated the effects of various high-k gate dielectrics as well as microwave annealing (MWA) calcination and a postcalcination oxygen plasma treatment on the electrical properties and stability of electrospun indium gallium zinc oxide (IGZO)-nanofiber (NF)-based field-effect transistors (FETs). We found that the higher the dielectric constant of the gate dielectric, the better the electric field is transferred, resulting in the better performance of the IGZO NF FET. In addition, the MWA-calcined IGZO NF FET was superior to the conventional furnace annealing-calcined device in terms of the electrical properties of the device and the operation of resistor-loaded inverter, and it was proved that the oxygen plasma treatment further improved the performance. The results of the gate bias temperature stress test confirmed that the MWA calcination process and postcalcination oxygen plasma treatment greatly improved the stability of the IGZO NF FET by reducing the number of defects and charge traps. This verified that the MWA calcination process and oxygen plasma treatment effectively remove the organic solvent and impurities that act as charge traps in the chemical analysis of NF using X-ray photoelectron spectroscopy. Furthermore, it was demonstrated through scanning electron microscopy and ultraviolet-visible spectrophotometer that the MWA calcination process and postcalcination oxygen plasma treatment also improve the morphological and optical properties of IGZO NF.

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