Electrical characterization ofn‐amorphous/p‐crystalline silicon heterojunctions

1996 ◽  
Vol 79 (11) ◽  
pp. 8493-8497 ◽  
Author(s):  
L. F. Marsal ◽  
J. Pallarès ◽  
X. Correig ◽  
J. Calderer ◽  
R. Alcubilla
Keyword(s):  
Crystalline Silicon ◽  
Electrical Characterization ◽  
Silicon Heterojunctions

Electrical characterization of n-type a-SiGe:H/p-type crystalline-silicon heterojunctions

2003 ◽  
Vol 19 (3) ◽  
pp. 366-372 ◽  
Author(s):  
P Rosales-Quintero ◽  
A Torres-Jacome ◽  
R Murphy-Arteaga ◽  
M Landa-Vázquez
Keyword(s):  
Crystalline Silicon ◽  
Electrical Characterization ◽  
Type A ◽  
Silicon Heterojunctions ◽  
P Type

Analysis of an Anomalous CMOS Transistor Exhibiting Drain to Source Leakage—Its Model and Cause

2014 ◽  
Author(s):  
Yuk L. Tsang ◽  
Alex VanVianen ◽  
Xiang D. Wang ◽  
N. David Theodore
Keyword(s):  
Threshold Voltage ◽  
Crystalline Silicon ◽  
Electrical Characterization ◽  
Visual Defect ◽  
Scanning Capacitance Microscopy ◽  
Device Model ◽  
Graphical Simulation ◽  
Cmos Transistor

Abstract In this paper, we report a device model that has successfully described the characteristics of an anomalous CMOS NFET and led to the identification of a non-visual defect. The model was based on detailed electrical characterization of a transistor exhibiting a threshold voltage (Vt) of about 120mv lower than normal and also exhibiting source to drain leakage. Using a simple graphical simulation, we predicted that the anomalous device was a transistor in parallel with a resistor. It was proposed that the resistor was due to a counter doping defect. This was confirmed using Scanning Capacitance Microscopy (SCM). The dopant defect was shown by TEM imaging to be caused by a crystalline silicon dislocation.

Physical and electrical characterization of TiO2 particles after high temperature processing and before and after ultraviolet irradiation

2014 ◽  
Vol 92 (7/8) ◽  
pp. 832-837
Author(s):  
J. Molina ◽  
C. Zúñiga ◽  
M. Moreno ◽  
W. Calleja ◽  
P. Rosales ◽  
...  
Keyword(s):  
High Temperature ◽  
Thermal Treatment ◽  
Uv Irradiation ◽  
Silicon Oxide ◽  
Crystalline Silicon ◽  
Electrical Characterization ◽  
Metal Electrode ◽  
Rutile Phase ◽  
Before And After ◽  
Diffraction Patterns

In this work, rutile-phase TiO2 particles (r-TiO2, about 360 nm in size) are embedded within a silicon oxide matrix using different concentration ratios of r-TiO2 with respect to SiO2:H2O, so that suspensions of mixed TiO2:SiO2 oxides were obtained and analyzed. These TiO2:SiO2 suspensions were deposited on previously-cleaned crystalline silicon and quartz substrates so that thin films of TiO2:SiO2 were obtained. All films were then exposed to relatively high-temperature thermal treatments in nitrogen and different characterization techniques were used to determine their physical and electrical properties before and after ultraviolet (UV) irradiation. Before high thermal treatment, X-ray diffraction patterns show that the main diffraction peaks for the obtained TiO2:SiO2 films correspond to the crystalline phase of rutile-TiO2. Infrared analyses before and after thermal treatment show significant changes in the chemical bonding of the final films relative to the temperatures used during annealing. Also, UV–visible spectra provide a constant optical band gap for the films, independent of different TiO2 concentrations as expected. On the other hand, atomic-force microscopy measurements before and after UV irradiation show an appreciable difference in the grain size and surface morphology of the resulting TiO2:SiO2 oxides annealed at 1000 °C. Finally, photoelectrical I–V properties were obtained for all TiO2:SiO2 films by depositing ultrathin titanium stripes on top of the photoactive material and then, measuring the total current flowing through the metal electrode before and after UV irradiation. From these last measurements, a detectable increase in the I–V slope (lower resistance of the titanium stripe) is found for all samples during UV exposure, thus making this device to act as a simple photoresistor based on r-TiO2 particles.

scholarly journals Hydrogen plasma treatments for passivation of amorphous-crystalline silicon-heterojunctions on surfaces promoting epitaxy

2013 ◽  
Vol 102 (12) ◽  
pp. 122106 ◽  
Author(s):  
Mathias Mews ◽  
Tim F. Schulze ◽  
Nicola Mingirulli ◽  
Lars Korte
Keyword(s):  
Crystalline Silicon ◽  
Hydrogen Plasma ◽  
Plasma Treatments ◽  
Silicon Heterojunctions
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