Ion channeling and Auger electron spectroscopy study of Sb‐diffused Pb1−xSnxTe crystals

1981 ◽  
Vol 52 (7) ◽  
pp. 4593-4599 ◽  
Author(s):  
R. B. Alexander ◽  
W. E. Dorenbusch ◽  
W. Lo
1989 ◽  
Vol 23 (11) ◽  
pp. 1969-1973 ◽  
Author(s):  
I. Baker ◽  
R.A. Padgett ◽  
E.M. Schulson

2006 ◽  
Vol 83 (1) ◽  
pp. 12-16 ◽  
Author(s):  
J.H. Xia ◽  
Rusli ◽  
S.F. Choy ◽  
R. Gopalakrishan ◽  
C.C. Tin ◽  
...  

1995 ◽  
Vol 396 ◽  
Author(s):  
K.R. Padmanabhan

AbstractThin sputtered ceramic films deposited on ceramic substrates were subjected to either Kr+ or Xe+ ion bombardment for ion beam mixing studies in ceramic-ceramic systems. The amount of mixing if any was evaluated from Rutherford backscattering and Auger electron spectroscopy. In some instances ceramic films were deposited on epitaxial films or single crystal substrates for ion channeling analysis. No significant mixing was observed in any of the systems with ZrC. However, analysis of the interface in Si3N4/ SiC system indicates appreciable mixing and ion beam induced damage to the substrate. The mixing appears to be dose dependent for heavier ions.


1986 ◽  
Vol 168 (1-3) ◽  
pp. 681-687 ◽  
Author(s):  
C. Fontaine ◽  
J.L. Castano ◽  
J. Castagné ◽  
A. Munoz-Yague

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