scholarly journals Atomic scale characterization of Mn doped InAs/GaAs quantum dots

2010 ◽  
Vol 96 (4) ◽  
pp. 042108 ◽  
Author(s):  
M. Bozkurt ◽  
V. A. Grant ◽  
J. M. Ulloa ◽  
R. P. Campion ◽  
C. T. Foxon ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Atomic Scale ◽  
Scale Characterization ◽  
Mn Doped

Atomic scale characterization of buried InxGa1−xAs quantum dots using pulsed laser atom probe tomography

2008 ◽  
Vol 92 (23) ◽  
pp. 233115 ◽  
Author(s):  
M. Müller ◽  
A. Cerezo ◽  
G. D. W. Smith ◽  
L. Chang ◽  
S. S. A. Gerstl
Keyword(s):  
Quantum Dots ◽  
Atom Probe Tomography ◽  
Pulsed Laser ◽  
Atom Probe ◽  
Atomic Scale ◽  
Scale Characterization

scholarly journals Atomic-Scale Characterization of Droplet Epitaxy Quantum Dots

Nanomaterials ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 85
Author(s):  
Raja S. R. Gajjela ◽  
Paul M. Koenraad
Keyword(s):  
Quantum Dots ◽  
Optoelectronic Devices ◽  
Atomic Scale ◽  
Droplet Epitaxy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Etch Pits ◽  
Cross Sectional ◽  
Scale Characterization

The fundamental understanding of quantum dot (QD) growth mechanism is essential to improve QD based optoelectronic devices. The size, shape, composition, and density of the QDs strongly influence the optoelectronic properties of the QDs. In this article, we present a detailed review on atomic-scale characterization of droplet epitaxy quantum dots by cross-sectional scanning tunneling microscopy (X-STM) and atom probe tomography (APT). We will discuss both strain-free GaAs/AlGaAs QDs and strained InAs/InP QDs grown by droplet epitaxy. The effects of various growth conditions on morphology and composition are presented. The efficiency of methods such as flushing technique is shown by comparing with conventional droplet epitaxy QDs to further gain control over QD height. A detailed characterization of etch pits in both QD systems is provided by X-STM and APT. This review presents an overview of detailed structural and compositional analysis that have assisted in improving the fabrication of QD based optoelectronic devices grown by droplet epitaxy.

Atomic scale characterization of GaInN/GaN multiple quantum wells in V-shaped pits

2011 ◽  
Vol 98 (18) ◽  
pp. 181904 ◽  
Author(s):  
Shigetaka Tomiya ◽  
Yuya Kanitani ◽  
Shinji Tanaka ◽  
Tadakatsu Ohkubo ◽  
Kazuhiro Hono
Keyword(s):  
Quantum Wells ◽  
Atomic Scale ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Scale Characterization

scholarly journals Combined Macroscopic, Nanoscopic, and Atomic-Scale Characterization of Gold-Ruthenium Bimetallic Catalysts for Octanol Oxidation

2016 ◽  
Vol 33 (7) ◽  
pp. 419-437 ◽  
Author(s):  
Lidia E. Chinchilla ◽  
Carol Olmos ◽  
Mert Kurttepeli ◽  
Sara Bals ◽  
Gustaaf Van Tendeloo ◽  
...  
Keyword(s):  
Bimetallic Catalysts ◽  
Atomic Scale ◽  
Scale Characterization

Atomic Scale Characterization of the Pt/TiO2; Interface

2004 ◽  
Vol 10 (S02) ◽  
pp. 452-453
Author(s):  
Hakim Iddir ◽  
Mark Disko ◽  
Nigel D. Browning ◽  
Serdar Ogut
Keyword(s):  
Atomic Scale ◽  
Scale Characterization

Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.

Atomic-scale characterization of the interfacial phonon in graphene/SiC

2017 ◽  
Vol 96 (15) ◽  
Author(s):  
Emi Minamitani ◽  
Ryuichi Arafune ◽  
Thomas Frederiksen ◽  
Tetsuya Suzuki ◽  
Syed Mohammad Fakruddin Shahed ◽  
...  
Keyword(s):  
Atomic Scale ◽  
Scale Characterization

Atomic-scale characterization of theSrTiO3Σ3(112)[1¯10]grain boundary

2010 ◽  
Vol 81 (13) ◽  
Author(s):  
K. J. Dudeck ◽  
N. A. Benedek ◽  
M. W. Finnis ◽  
D. J. H. Cockayne
Keyword(s):  
Grain Boundary ◽  
Atomic Scale ◽  
Scale Characterization

scholarly journals Hardware and Techniques for Cross- Correlative TEM and Atom Probe Analysis

2008 ◽  
Vol 16 (4) ◽  
pp. 42-47 ◽  
Author(s):  
Brian P. Gorman ◽  
David Diercks ◽  
Norman Salmon ◽  
Eric Stach ◽  
Gonzalo Amador ◽  
...  
Keyword(s):  
A Priori ◽  
Atom Probe ◽  
Atomic Scale ◽  
Original Position ◽  
3 Dimensional ◽  
Original Specimen ◽  
High Electrical Field ◽  
Scale Characterization ◽  
Surface Monolayers

Atom probe tomography has primarily been used for atomic scale characterization of high electrical conductivity materials. A high electrical field applied to needle-shaped specimens evaporates surface atoms, and a time of flight measurement determines each atom's identity. A 2-dimensional detector determines each atom's original position on the specimen. When repeated successively over many surface monolayers, the original specimen can be reconstructed into a 3-dimensional representation. In order to have an accurate 3-D reconstruction of the original, the field required for atomic evaporation must be known a-priori. For many metallic materials, this evaporation field is well characterized, and 3-D reconstructions can be achieved with reasonable accuracy.

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