Origin of subgap current in an SIS junction

Electromagnetic Properties of the Tunnel SIS Junction

Materials Science Forum ◽

10.4028/www.scientific.net/msf.373-376.501 ◽

2001 ◽

Vol 373-376 ◽

pp. 501-504

Author(s):

E.D. Belokolos ◽

A.M. Korostil ◽

V.Z. Enolskii

Keyword(s):

Electromagnetic Properties ◽

Sis Junction

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Capability of a MM-wave mixer with Nb/Al-AlO<inf>x</inf>/Nb SIS junction

IEEE Transactions on Magnetics ◽

10.1109/tmag.1987.1065123 ◽

1987 ◽

Vol 23 (2) ◽

pp. 1037-1040 ◽

Cited By ~ 2

Author(s):

T. Kasuga ◽

M. Tsuboi ◽

J. Inatani ◽

H. Iwashita ◽

A. Sakamoto

Keyword(s):

Sis Junction

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Mathematical Modelling of Bifacial Dual SIS Solar Cell and Optimization of Tilt Angle

10.21203/rs.3.rs-838042/v1 ◽

2021 ◽

Author(s):

Kaustuv Dasgupta ◽

Anup Mondal ◽

Utpal Gangopadhyay

Keyword(s):

Solar Cell ◽

Mathematical Modelling ◽

Indian Subcontinent ◽

Front Surface ◽

Back Surface ◽

Tropical Region ◽

Solar Panels ◽

Sis Junction ◽

Optimum Cost ◽

P Type

Abstract The major challenge of PV cell design and installation has always been to find the optimum cost per energy and area of installation of solar panels. In densely populated and high-yielding agricultural country like India land acquisition is becoming an issue. Moreover the consisting demand to deduce the cost per energy indulges the worldwide scientists to design more efficient solar cells with low production cost. In developing countries scientists and engineers are trying to find an amicable solution to meet up these problems. In this paper the mathematical modelling of a dual SIS bifacial vertically mounted solar panel has been proposed to mitigate the energy and land area crisis in countries of Indian subcontinent, south Asia and elsewhere. The SIS (Semiconductor-Insulator-Semiconductor) technology was chosen for its extremely low thermal budget and less complicated production procedure. A bifacial solar cell with SIS junction in both sides was modelled. The front surface SIS junction was considered ZnO-SiO2-Si(p-type) while the back surface junction was considered Si(p type)-Al2O3-SnO. The efficiency for front and back surface was calculated as 5.64% and 5.58% respectively. We have further considered the effect of albedo from two different surfaces (soil and concrete) and the efficiencies of front and back surface for these albedo radiations. The angle of installation was optimized for both these effects. Considering both direct and albedo the all-day efficiency was calculated as 22.47% for a sunny day tropical region.

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Gain Enhancement in Inductively-Loaded Distributed SIS Junction Arrays

IEEE Transactions on Applied Superconductivity ◽

10.1109/tasc.2007.898180 ◽

2007 ◽

Vol 17 (2) ◽

pp. 371-374 ◽

Cited By ~ 2

Author(s):

Cheuk-Yu Edward Tong ◽

Raymond Blundell ◽

Krikor G. Megerian ◽

Jeffrey A. Stern ◽

Marian Pospieszalski ◽

...

Keyword(s):

Gain Enhancement ◽

Sis Junction ◽

Junction Arrays

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Contribution of Quantum Susceptance in SIS Junction Capacitance Measurement

IEEE Transactions on Applied Superconductivity ◽

10.1109/tasc.2019.2908092 ◽

2019 ◽

Vol 29 (5) ◽

pp. 1-4 ◽

Cited By ~ 1

Author(s):

Takafumi Kojima ◽

Matthias Kroug ◽

Yoshinori Uzawa ◽

Yuto Kozuki ◽

Wenlei Shan

Keyword(s):

Capacitance Measurement ◽

Junction Capacitance ◽

Sis Junction

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A Thin Barrier Technology for the Integration of YBa2Cu3O7−x Thin Films to Semiconductors

MRS Proceedings ◽

10.1557/proc-275-801 ◽

1992 ◽

Vol 275 ◽

Author(s):

A. Mesarwi ◽

N. J. Wu ◽

H. Fredricksen ◽

A. Ignatiev

Keyword(s):

Thin Films ◽

Selective Oxidation ◽

Laser Deposition ◽

High Quality ◽

Ybco Superconductors ◽

Sis Junction ◽

Standard Laser ◽

Thin Barrier ◽

Sis Junctions ◽

Effective Buffer

ABSTRACTUltra-thin SiO2 barriers have been developed for application to the integration of thin films of YBa2Cu3O7−x (YBCO) superconductors to silicon. The SiO2 barriers are formed by the selective oxidation of Si with 2–5 ML yttrium overlayers. The Y-promoted SiO2, barrier formed by this technique is highly stoichiometric and is an effective buffer which prevents YBCO/substrate interdiffusion. The technique has been applied to YBCO on Si and has resulted in a YBCO transition temperature of TC=78°K for a 70Å Y-promoted SiO2 barrier.This technique has also been applied to the growth of multilayer YBCO films and fabrication of SIS junctions. For this purpose, a Y-promoted SiO2 barrier was prepared by the selective oxidation of a Y/Si/Y sandwich layer grown on thin fdm YBCO deposited on MgO by standard laser deposition. This resulted in a 20–40Å SiO2/Y2O3-, high quality barrier. Following barrier preparation, a second YBCO thin layer was deposited on the barrier yielding a YBa2Cu3O7−x-SiO2-YBa2Cu3O7−x (SIS) structure which was then patterned to yield 100μm diameter SIS junctions. Voltage-current measurements across the SIS junction have shown Joseph son junction behavior.

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