Laser chemical vapor deposition: A technique for selective area deposition

1981 ◽  
Vol 52 (11) ◽  
pp. 6501-6505 ◽  
Author(s):  
S.D. Allen
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Laser Chemical Vapor Deposition ◽  
Selective Area ◽  
Area Deposition

Selective area deposition of diamond thin films on patterns of porous silicon by hot‐filament chemical vapor deposition

1995 ◽  
Vol 67 (24) ◽  
pp. 3557-3559 ◽  
Author(s):  
S. Mirzakuchaki ◽  
M. Hajsaid ◽  
H. Golestanian ◽  
R. Roychoudhury ◽  
E. J. Charlson ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Porous Silicon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Selective Area ◽  
Diamond Thin Films ◽  
Hot Filament ◽  
Area Deposition

Selective-Area Laser-Assisted Processing for Microelectronic Multi-Chip Interconnect Applications

1988 ◽  
Vol 129 ◽  
Author(s):  
Robert F. Miracky
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Processing Technique ◽  
Direct Write ◽  
Laser Chemical Vapor Deposition ◽  
Selective Area ◽  
New Process ◽  
Laser Direct Write ◽  
Deposited Films

ABSTRACTLaser direct-write processes are attractive complements to traditional methods of fabricating microelectronic circuitry. This paper is a summary of our work in applying such processes to high-density inter-chip interconnection modules, such as those using copper conductors on polyimide dielectric layers. We begin by discussing the requirements which laser processes must satisfy in order to be useful in this application. An analytical model of laser heating is then described, which aids in understanding the thermal problem of absorption of visible-wavelength laser light by polyimide. Calculations using this model are consistent with experimental observations. Finally, we focus on one laser processing technique: laser chemical vapor deposition. We describe a new process for laser chemical vapor deposition of tungsten on polyimide, which enables the formation of low resistance contacts (≈ 0.1 Ω) between the deposited tungsten films and pre-patterned nickel-coated copper conductors. Lines approximately 30 /m wide and 34 µm thick were deposited at a scan rate of 93 µm/s. From four-point resistance measurements of different lengths of deposited films, the tungsten film resistivity is estimated to be two to three times the bulk value.

High‐speed laser chemical vapor deposition of copper: A search for optimum conditions

1989 ◽  
Vol 65 (6) ◽  
pp. 2470-2474 ◽  
Author(s):  
B. Markwalder ◽  
M. Widmer ◽  
D. Braichotte ◽  
H. van den Bergh
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Speed ◽  
Chemical Vapor ◽  
Optimum Conditions ◽  
Laser Chemical Vapor Deposition
Sign in / Sign up

Export Citation Format

Share Document