Damage profile determination of ion‐implanted Si layers by ellipsometry

1980 ◽  
Vol 51 (8) ◽  
pp. 4125-4129 ◽  
Author(s):  
T. Motooka ◽  
K. Watanabe
Keyword(s):  
Ion Implanted

scholarly journals Quantitative determination of the charge carrier concentration of ion implanted silicon by IR-near-field spectroscopy

2010 ◽  
Vol 18 (25) ◽  
pp. 26206 ◽  
Author(s):  
Rainer Jacob ◽  
Stephan Winnerl ◽  
Harald Schneider ◽  
Manfred Helm ◽  
Marc Tobias Wenzel ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Quantitative Determination ◽  
Carrier Concentration ◽  
Near Field ◽  
Charge Carrier Concentration ◽  
Field Spectroscopy ◽  
Ion Implanted

scholarly journals Determination of thermal and optical properties of ion implanted polyetheretherketone films by photothermal spectroscopies

2007 ◽  
Vol 101 (5) ◽  
pp. 054506 ◽  
Author(s):  
J. E. de Albuquerque ◽  
E. Tavenner ◽  
M. Curry ◽  
R. E. Giedd ◽  
P. Meredith
Keyword(s):  
Optical Properties ◽  
Ion Implanted

The Behavior of Ion-Implanted Hydrogen in Gallium Nitride

1998 ◽  
Vol 537 ◽  
Author(s):  
S. M. Myers ◽  
T.J. Headley ◽  
C.R. Hills ◽  
J. Han ◽  
G.A. Petersen ◽  
...  
Keyword(s):  
Bound States ◽  
Bubble Formation ◽  
Extended Defects ◽  
Wurtzite Phase ◽  
Ion Channeling ◽  
Transmission Electron ◽  
Microstructural Effects ◽  
Formation And Evolution ◽  
Ion Implanted

AbstractHydrogen was ion-implanted into wurtzite-phase GaN, and its transport, bound states, and microstructural effects during annealing up to 980°C were investigated by nuclear-reaction profiling, ion-channeling analysis, transmission electron microscopy, and infrared (IR) vibrational spectroscopy. At implanted concentrations vl at.%, faceted H 2 bubbles formed, enabling identification of energetically preferred surfaces, examination of passivating N-H states on these surfaces, and determination of the diffusivity-solubility product of the H. Additionally, the formation and evolution of point and extended defects arising from implantation and bubble formation were characterized. At implanted H concentrations ^0.1 at.%, bubble formation was not observed, and ion-channeling analysis indicated a defect-related H site located within the [0001] channel.

Determination of boron range distribution in ion-implanted silicon by the10B(n, α)7 Li reaction

1977 ◽  
Vol 38 (1-2) ◽  
pp. 19-27 ◽  
Author(s):  
Á. Z. Nagy ◽  
J. Bogáncs ◽  
J. Gyulai ◽  
A. Csőke ◽  
V. Nazarov ◽  
...  
Keyword(s):  
Range Distribution ◽  
Ion Implanted
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