An experimental determination of electron drift velocity in 0.5- mu m gate-length ion-implanted GaAs MESFET's

1991 ◽  
Vol 12 (2) ◽  
pp. 40-41 ◽  
Author(s):  
M. Feng ◽  
C.L. Lau ◽  
V. Eu
Keyword(s):  
Experimental Determination ◽  
Drift Velocity ◽  
Electron Drift Velocity ◽  
Electron Drift ◽  
Gate Length ◽  
Ion Implanted

Experimental determination of electron drift velocity in 4H-SiC p/sup +/-n-n/sup +/ avalanche diodes

2000 ◽  
Vol 21 (10) ◽  
pp. 485-487 ◽  
Author(s):  
K.V. Vassilevski ◽  
K. Zekentes ◽  
A.V. Zorenko ◽  
L.P. Romanov
Keyword(s):  
Experimental Determination ◽  
Drift Velocity ◽  
Electron Drift Velocity ◽  
Electron Drift ◽  
Avalanche Diodes

Gate Length Dependence of Electron Drift Velocity in the High Field Channel of InP MESFETs

1985 ◽  
Vol 24 (Part 1, No. 11) ◽  
pp. 1573-1574 ◽  
Author(s):  
Tadao Ishibashi ◽  
Yuhki Imai ◽  
Masao Idda
Keyword(s):  
Drift Velocity ◽  
High Field ◽  
Electron Drift Velocity ◽  
Electron Drift ◽  
Gate Length ◽  
Length Dependence

Electron drift velocity versus electric field in GaAs

1986 ◽  
Vol 29 (12) ◽  
pp. 1295-1296 ◽  
Author(s):  
Chian S. Chang ◽  
Harold R. Fetterman
Keyword(s):  
Electric Field ◽  
Drift Velocity ◽  
Electron Drift Velocity ◽  
Velocity Versus ◽  
Electron Drift
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