A model for radiation-induced off-state leakage current in N-channel metal-oxide-semiconductor transistors with shallow trench isolation

Sihao Wang; Yunpeng Pei; Ru Huang; Wenhua Wang; Wen Liu; Shoubin Xue; Xia An; Jingquan Tian; Yangyuan Wang

doi:10.1063/1.3277017

A model for radiation-induced off-state leakage current in N-channel metal-oxide-semiconductor transistors with shallow trench isolation

Journal of Applied Physics ◽

10.1063/1.3277017 ◽

2010 ◽

Vol 107 (2) ◽

pp. 024515 ◽

Cited By ~ 2

Author(s):

Sihao Wang ◽

Yunpeng Pei ◽

Ru Huang ◽

Wenhua Wang ◽

Wen Liu ◽

...

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Shallow Trench Isolation ◽

Trench Isolation ◽

Radiation Induced

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Fabricating high performance n-channel lateral double diffused metal–oxide–semiconductor transistors utilizing the shallow trench isolation as a salicide blocking mask of the drift region

Current Applied Physics ◽

10.1016/j.cap.2007.10.086 ◽

2009 ◽

Vol 9 (1) ◽

pp. 9-12 ◽

Cited By ~ 3

Author(s):

Kee-Yeol Na ◽

Yeong-Seuk Kim

Keyword(s):

Metal Oxide ◽

High Performance ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Drift Region ◽

Shallow Trench Isolation ◽

Trench Isolation

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Chemical mechanical polishing of shallow trench isolation using the ceria-based high selectivity slurry for sub-0.18 μm complementary metal–oxide–semiconductor fabrication

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1475984 ◽

2002 ◽

Vol 20 (3) ◽

pp. 918 ◽

Cited By ~ 18

Author(s):

Sam-Dong Kim ◽

In-Seok Hwang ◽

Hyung-Moo Park ◽

Jin-Koo Rhee ◽

Chul-Woo Nam

Keyword(s):

Metal Oxide ◽

Chemical Mechanical Polishing ◽

High Selectivity ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Mechanical Polishing ◽

Oxide Semiconductor ◽

Shallow Trench Isolation ◽

Trench Isolation ◽

Semiconductor Fabrication

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The Impact of Shallow-Trench-Isolation Mechanical Stress on the Hysteresis Effect of Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effects

Chinese Physics Letters ◽

10.1088/0256-307x/31/12/126601 ◽

2014 ◽

Vol 31 (12) ◽

pp. 126601

Author(s):

Jie-Xin Luo ◽

Jing Chen ◽

Zhan Chai ◽

Kai Lü ◽

Wei-Wei He ◽

...

Keyword(s):

Metal Oxide ◽

Mechanical Stress ◽

Metal Oxide Semiconductor ◽

Hysteresis Effect ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Shallow Trench Isolation ◽

Field Effects ◽

Trench Isolation ◽

The Impact

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Impact of Reducing Shallow Trench Isolation Mechanical Stress on Active Length for 40 nm n-Type Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.04dc21 ◽

2011 ◽

Vol 50 (4S) ◽

pp. 04DC21 ◽

Cited By ~ 1

Author(s):

Yao-Tsung Huang ◽

San-Lein Wu ◽

Hau-Yu Lin ◽

Cheng-Wen Kuo ◽

Shoou-Jinn Chang ◽

...

Keyword(s):

Metal Oxide ◽

Mechanical Stress ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Shallow Trench Isolation ◽

Active Length ◽

Trench Isolation

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Layout Dependent Induced Leakage and its Prevention with Different Shallow Trench Isolation Schemes in 0.18 µm Dual Gate Complementary Metal Oxide Semiconductor Technology

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.375 ◽

2007 ◽

Vol 46 (1) ◽

pp. 375-377

Author(s):

Seong Yeol Mun ◽

Kyeong Cheol Shin ◽

Sang Bum Huh ◽

Je Il Ju ◽

Jae Yeong Kim ◽

...

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

Shallow Trench Isolation ◽

Trench Isolation ◽

Dual Gate

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Remarkable Effects of Introduction of SiON Materials into Shallow Trench Isolation Fabrication Process on Metal-Oxide-Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.40.462 ◽

2001 ◽

Vol 40 (Part 1, No. 2A) ◽

pp. 462-466 ◽

Cited By ~ 2

Author(s):

Katsuomi Shiozawa ◽

Toshiyuki Oishi ◽

Yuji Abe ◽

Yasunori Tokuda

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Fabrication Process ◽

Oxide Semiconductor ◽

Shallow Trench Isolation ◽

Trench Isolation

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Shallow trench isolation stress modification by optimal shallow trench isolation process for sub-65-nm low power complementary metal oxide semiconductor technology

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3359612 ◽

2010 ◽

Vol 28 (2) ◽

pp. 391-397 ◽

Cited By ~ 3

Author(s):

Chan-Yuan Hu ◽

Jone F. Chen ◽

Shih-Chih Chen ◽

Shoou-Jinn Chang ◽

Shih-Ming Wang ◽

...

Keyword(s):

Metal Oxide ◽

Low Power ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

Shallow Trench Isolation ◽

Isolation Stress ◽

Trench Isolation

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Abnormal Junction Profile of Submicrometer Complementary Metal Oxide Semiconductor Devices with Co Silicidation and Shallow Trench Isolation Processes

Electrochemical and Solid-State Letters ◽

10.1149/1.1403216 ◽

2001 ◽

Vol 4 (11) ◽

pp. G88 ◽

Cited By ~ 2

Author(s):

Chel-Jong Choi ◽

Tae-Yeon Seong ◽

Key-Min Lee ◽

Joo-Hyoung Lee ◽

Young-Jin Park ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Shallow Trench Isolation ◽

Trench Isolation

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Damage Effect of ALD-Al2O3 Based Metal-Oxide-Semiconductor Structures under Gamma-Ray Irradiation

Micromachines ◽

10.3390/mi12060661 ◽

2021 ◽

Vol 12 (6) ◽

pp. 661

Author(s):

Man Ding

Keyword(s):

Metal Oxide ◽

Total Dose ◽

Leakage Current ◽

Gamma Ray ◽

Charge Trapping ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Trapping Efficiency ◽

Semiconductor Structures ◽

Radiation Induced

The radiation response of Al2O3 on silicon substrate under gamma-rays is studied in this article. The atomic layer deposited Al2O3 based metal-oxide-semiconductor structures were irradiated under gamma-ray with the total dose of 1.2 Mrad(Si)/2.5 Mrad(Si)/4 Mrad(Si). The generation, transportation and trapping characteristics of radiation induced charges were studied by using electronic, physical and chemical methods. Firstly, the radiation induced trapped charge density in Al2O3 is up to 1012 cm−2, with the effective trapping efficiency of 7–20% under irradiation. Secondly, the leakage current through Al2O3 changes little with the increase of radiation total dose. Thirdly, oxygen vacancy in Al2O3 and O dangling bonds and Al-Si metallic bonds at Al2O3/Si interface are dominant radiation induced defects in Al2O3/Si system, and the valence band offset between Al2O3 and Si is found to decrease after irradiation. From the results we can see that Al2O3 is radiation resistant from the aspect of leakage current and crystallization characteristics, but the radiation induced charge trapping and new defects in Al2O3/Si structure cannot be ignored. This paper provides a reference for the space application of Al2O3 based MOS devices.

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