Remarkable Effects of Introduction of SiON Materials into Shallow Trench Isolation Fabrication Process on Metal-Oxide-Semiconductor Field-Effect Transistors

Katsuomi Shiozawa; Toshiyuki Oishi; Yuji Abe; Yasunori Tokuda

doi:10.1143/jjap.40.462

Remarkable Effects of Introduction of SiON Materials into Shallow Trench Isolation Fabrication Process on Metal-Oxide-Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.40.462 ◽

2001 ◽

Vol 40 (Part 1, No. 2A) ◽

pp. 462-466 ◽

Cited By ~ 2

Author(s):

Katsuomi Shiozawa ◽

Toshiyuki Oishi ◽

Yuji Abe ◽

Yasunori Tokuda

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Fabrication Process ◽

Oxide Semiconductor ◽

Shallow Trench Isolation ◽

Trench Isolation

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Impact of Reducing Shallow Trench Isolation Mechanical Stress on Active Length for 40 nm n-Type Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.04dc21 ◽

2011 ◽

Vol 50 (4S) ◽

pp. 04DC21 ◽

Cited By ~ 1

Author(s):

Yao-Tsung Huang ◽

San-Lein Wu ◽

Hau-Yu Lin ◽

Cheng-Wen Kuo ◽

Shoou-Jinn Chang ◽

...

Keyword(s):

Metal Oxide ◽

Mechanical Stress ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Shallow Trench Isolation ◽

Active Length ◽

Trench Isolation

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Impact of Reducing Shallow Trench Isolation Mechanical Stress on Active Length for 40 nm n-Type Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.04dc21 ◽

2011 ◽

Vol 50 (4) ◽

pp. 04DC21 ◽

Cited By ~ 1

Author(s):

Yao-Tsung Huang ◽

San-Lein Wu ◽

Hau-Yu Lin ◽

Cheng-Wen Kuo ◽

Shoou-Jinn Chang ◽

...

Keyword(s):

Metal Oxide ◽

Mechanical Stress ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Shallow Trench Isolation ◽

Active Length ◽

Trench Isolation

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Reproducing Subthreshold Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors under Shallow Trench Isolation Mechanical Stress Using a Stress-Dependent Diffusion Model

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.l849 ◽

2006 ◽

Vol 45 (No. 32) ◽

pp. L849-L851

Author(s):

Yi-Ming Sheu ◽

Sheng-Jier Yang ◽

Chih-Chiang Wang ◽

Chih-Sheng Chang ◽

Ming-Jer Chen ◽

...

Keyword(s):

Metal Oxide ◽

Mechanical Stress ◽

Diffusion Model ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Shallow Trench Isolation ◽

Trench Isolation ◽

Stress Dependent

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Temperature Dependence of Shallow-Trench-Isolation Mechanical Stress on n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.4161 ◽

2004 ◽

Vol 43 (7A) ◽

pp. 4161-4162

Author(s):

Jinn-Horng Lai ◽

Jeng Gong ◽

Tsuoe-Hsiang Liao ◽

David Cheng-Hsiung Chen

Keyword(s):

Metal Oxide ◽

Temperature Dependence ◽

Mechanical Stress ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Shallow Trench Isolation ◽

Trench Isolation

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Investigation of Hot Carrier Degradation in Shallow-Trench-Isolation-Based High-Voltage Laterally Diffused Metal–Oxide–Semiconductor Field-Effect Transistors by a Novel Direct Current Current–Voltage Technique

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.04dp08 ◽

2012 ◽

Vol 51 (4S) ◽

pp. 04DP08 ◽

Cited By ~ 1

Author(s):

Yandong He ◽

Ganggang Zhang

Keyword(s):

High Voltage ◽

Direct Current ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Shallow Trench Isolation ◽

Hot Carrier ◽

Current Voltage ◽

Trench Isolation

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High temperature behavior of multi-region direct current current–voltage spectroscopy and relationship with shallow-trench-isolation-based high-voltage laterally diffused metal–oxide–semiconductor field-effect-transistors reliability

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.04ec12 ◽

2014 ◽

Vol 53 (4S) ◽

pp. 04EC12

Author(s):

Yandong He ◽

Ganggang Zhang ◽

Xing Zhang

Keyword(s):

High Temperature ◽

High Voltage ◽

Direct Current ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Shallow Trench Isolation ◽

Current Voltage ◽

Trench Isolation

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Investigation of Hot Carrier Degradation in Shallow-Trench-Isolation-Based High-Voltage Laterally Diffused Metal–Oxide–Semiconductor Field-Effect Transistors by a Novel Direct Current Current–Voltage Technique

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.04dp08 ◽

2012 ◽

Vol 51 ◽

pp. 04DP08 ◽

Cited By ~ 1

Author(s):

Yandong He ◽

Ganggang Zhang

Keyword(s):

High Voltage ◽

Direct Current ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Shallow Trench Isolation ◽

Hot Carrier ◽

Current Voltage ◽

Trench Isolation

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Investigation of consequent process-induced stress for N-type metal oxide semiconductor field effect transistor with a sunken shallow trench isolation pattern

Thin Solid Films ◽

10.1016/j.tsf.2013.10.027 ◽

2014 ◽

Vol 557 ◽

pp. 323-328 ◽

Cited By ~ 1

Author(s):

Chang-Chun Lee ◽

Chuan-Hsi Liu ◽

Rong Hao Deng ◽

Hung-Wen Hsu ◽

Kuo-Ning Chiang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Shallow Trench Isolation ◽

Induced Stress ◽

Trench Isolation ◽

Effect Transistor

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Investigation of piezoresistive effect in p-channel metal–oxide–semiconductor field-effect transistors fabricated on circular silicon-on-insulator diaphragms using cost-effective minimal-fab process

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.06hd03 ◽

2018 ◽

Vol 57 (6S1) ◽

pp. 06HD03 ◽

Cited By ~ 3

Author(s):

Yongxun Liu ◽

Hiroyuki Tanaka ◽

Norio Umeyama ◽

Kazuhiro Koga ◽

Sommawan Khumpuang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Cost Effective ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Piezoresistive Effect

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Fabricating high performance n-channel lateral double diffused metal–oxide–semiconductor transistors utilizing the shallow trench isolation as a salicide blocking mask of the drift region

Current Applied Physics ◽

10.1016/j.cap.2007.10.086 ◽

2009 ◽

Vol 9 (1) ◽

pp. 9-12 ◽

Cited By ~ 3

Author(s):

Kee-Yeol Na ◽

Yeong-Seuk Kim

Keyword(s):

Metal Oxide ◽

High Performance ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Drift Region ◽

Shallow Trench Isolation ◽

Trench Isolation

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