Study of buried silicon nitride layers synthesized by ion implantation

1980 ◽  
Vol 51 (12) ◽  
pp. 6169-6175 ◽  
Author(s):  
P. Bourguet ◽  
J. M. Dupart ◽  
E. Le Tiran ◽  
P. Auvray ◽  
A. Guivarc’h ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Ion Implantation ◽  
Nitride Layers

Properties investigation of thin silicon nitride layers synthesized by ion implantation

1978 ◽  
Vol 39 (3-4) ◽  
pp. 163-167 ◽  
Author(s):  
F. F. Komarov ◽  
I. A. Rogalevich ◽  
V. S. Tishkov
Keyword(s):  
Silicon Nitride ◽  
Ion Implantation ◽  
Thin Silicon ◽  
Nitride Layers

A long-range influence of the argon-ion irradiation on the silicon nitride layers formed by the ion implantation

2001 ◽  
Vol 35 (1) ◽  
pp. 20-23
Author(s):  
E. S. Demidov ◽  
V. V. Karzanov ◽  
D. A. Lobanov ◽  
K. A. Markov ◽  
V. V. Sdobnyakov
Keyword(s):  
Silicon Nitride ◽  
Ion Implantation ◽  
Long Range ◽  
Ion Irradiation ◽  
Nitride Layers ◽  
Argon Ion

Broad range adjustable emission of stacked SiNx/SiOy layers

2008 ◽  
Vol 23 (6) ◽  
pp. 1513-1516 ◽  
Author(s):  
J. Barreto ◽  
M. Perálvarez ◽  
A. Morales ◽  
B. Garrido ◽  
J. Montserrat ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Ion Implantation ◽  
Visible Spectrum ◽  
Blue Luminescence ◽  
Relative Thickness ◽  
Emission Properties ◽  
Red Luminescence ◽  
Nitride Layers ◽  
First Time ◽  
The Way

Structures containing stacked layers of silicon-rich silicon nitride (green-blue luminescence) and oxide (red luminescence) fabricated by ion implantation are reported, and it is shown how a Si-based material can be engineered to emit over a broad range. To study in depth the emission from implanted SiNx matrices, single nitride layers have been also fabricated by the first time. Si excess variation and the relative thickness of nitride and oxide provide the intensity and position variation of the peaks, and thus open the way to engineer a stack with desired emission properties over the whole visible spectrum.

Kinetics of silicon nitride crystallization in N+-implanted silicon

1989 ◽  
Vol 4 (2) ◽  
pp. 394-398 ◽  
Author(s):  
V. S. Kaushik ◽  
A. K. Datye ◽  
D. L. Kendall ◽  
B. Martinez-Tovar ◽  
D. S. Simons ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Wafer Surface ◽  
Amorphous Silicon Nitride ◽  
Silicon Lattice ◽  
Nitrogen Ions ◽  
The Mean ◽  
Nitride Layers ◽  
Kinetics Of

Implantation of nitrogen at 150 KeV and a dose of 1 ⊠ 1018/cm2 into (110) silicon results in the formation of an amorphized layer at the mean ion range, and a deeper tail of nitrogen ions. Annealing studies show that the amorphized layer recrystallizes into a continuous polycrystalline Si3N4 layer after annealing for 1 h at 1200 °C. In contrast, the deeper nitrogen fraction forms discrete precipitates (located 1μm below the wafer surface) in less than 1 min at this temperature. The arcal density of these precipitates is 5 ⊠ 107/cm2 compared with a nuclei density of 1.6 ⊠ 105/cm2 in the amorphized layer at comparable annealing times. These data suggest that the nucleation step limits the recrystallization rate of amorphous silicon nitride to form continuous buried nitride layers. The nitrogen located within the damaged crystalline silicon lattice precipitates very rapidly, yielding semicoherent crystallites of β–Si3N4.

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