Steady-state and transient photoconductivity in c-axis GaN nanowires grown by nitrogen-plasma-assisted molecular beam epitaxy

2010 ◽  
Vol 107 (3) ◽  
pp. 034318 ◽  
Author(s):  
N. A. Sanford ◽  
P. T. Blanchard ◽  
K. A. Bertness ◽  
L. Mansfield ◽  
J. B. Schlager ◽  
...  
Keyword(s):  
Steady State ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Nitrogen Plasma ◽  
Gan Nanowires ◽  
Transient Photoconductivity

Steady-state and time-resolved photoluminescence from relaxed and strained GaN nanowires grown by catalyst-free molecular-beam epitaxy

2008 ◽  
Vol 103 (12) ◽  
pp. 124309 ◽  
Author(s):  
John B. Schlager ◽  
Kris A. Bertness ◽  
Paul T. Blanchard ◽  
Lawrence H. Robins ◽  
Alexana Roshko ◽  
...  
Keyword(s):  
Steady State ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Time Resolved ◽  
Gan Nanowires ◽  
Catalyst Free ◽  
Time Resolved Photoluminescence

Nucleation of GaN nanowires grown by plasma-assisted molecular beam epitaxy: The effect of temperature

2011 ◽  
Vol 334 (1) ◽  
pp. 177-180 ◽  
Author(s):  
Rafael Mata ◽  
Karine Hestroffer ◽  
Jorge Budagosky ◽  
Ana Cros ◽  
Catherine Bougerol ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Effect Of Temperature ◽  
Gan Nanowires

scholarly journals Selective Area Growth and Structural Characterization of GaN Nanostructures on Si(111) Substrates

Crystals ◽  
2018 ◽  
Vol 8 (9) ◽  
pp. 366 ◽  
Author(s):  
Alexana Roshko ◽  
Matt Brubaker ◽  
Paul Blanchard ◽  
Todd Harvey ◽  
Kris Bertness
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
Buffer Layers ◽  
Selective Area Growth ◽  
Gan Nanowires ◽  
Selective Area ◽  
Area Growth ◽  
Eutectic Formation

Selective area growth (SAG) of GaN nanowires and nanowalls on Si(111) substrates with AlN and GaN buffer layers grown by plasma-assisted molecular beam epitaxy was studied. For N-polar samples filling of SAG features increased with decreasing lattice mismatch between the SAG and buffer. Defects related to Al–Si eutectic formation were observed in all samples, irrespective of lattice mismatch and buffer layer polarity. Eutectic related defects in the Si surface caused voids in N-polar samples, but not in metal-polar samples. Likewise, inversion domains were present in N-polar, but not metal-polar samples. The morphology of Ga-polar GaN SAG on nitride buffered Si(111) was similar to that of homoepitaxial GaN SAG.

Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy

2018 ◽  
Vol 52 (12) ◽  
pp. 1529-1533 ◽  
Author(s):  
A. M. Mizerov ◽  
S. N. Timoshnev ◽  
M. S. Sobolev ◽  
E. V. Nikitina ◽  
K. Yu. Shubina ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Nitrogen Plasma ◽  
Initial Stage

THE STUDY OF Pd SCHOTTKY CONTACT ON POROUS GaN FOR UV METAL–SEMICONDUCTOR–METAL (MSM) PHOTODETECTORS

2007 ◽  
Vol 16 (04) ◽  
pp. 497-503 ◽  
Author(s):  
L. S. CHUAH ◽  
Z. HASSAN ◽  
H. ABU HASSAN
Keyword(s):  
Molecular Beam Epitaxy ◽  
Tensile Stress ◽  
Molecular Beam ◽  
Schottky Contact ◽  
Nitrogen Plasma ◽  
Porous Sample ◽  
Optical Studies ◽  
High Quality ◽  
Metal Semiconductor Metal ◽  
Msm Photodetectors

High quality unintentionally doped n-type GaN layers were grown on Si (111) substrate using AlN (about 200 nm) as buffer layer by radio frequency (RF) nitrogen plasma-assisted molecular beam epitaxy (MBE). This paper presents the structural and optical studies of porous GaN sample compared to the corresponding as-grown GaN. Metal–semiconductor–metal (MSM) photodiode was fabricated on the samples. For as-grown GaN-based MSM, the detector shows a sharp cut-off wavelength at 362 nm, with a maximum responsivity of 0.254 A/W achieved at 360 nm. For porous GaN MSM detector, a sharp cut-off wavelength at 360 nm with a maximum responsivity of 0.655 A/W was achieved at 359 nm. Both the detectors show a little decrease in responsivity in the UV spectral region. The MSM photodiode based on porous GaN shows enhanced (2×) magnitude of responsivity relative to the as-grown GaN MSM photodiode. Enhancement of responsivity can be attributed to the relaxation of tensile stress and reduction of surface pit density in the porous sample.

Formation of High-Quality GaN Microcrystals by Pendeoepitaxial Overgrowth of GaN Nanowires on Si(111) by Molecular Beam Epitaxy

2011 ◽  
Vol 11 (10) ◽  
pp. 4257-4260 ◽  
Author(s):  
Pinar Dogan ◽  
Oliver Brandt ◽  
Carsten Pfüller ◽  
Jonas Lähnemann ◽  
Uwe Jahn ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Quality ◽  
Gan Nanowires

Selective-area growth of GaN nanowires on SiO2-masked Si (111) substrates by molecular beam epitaxy

2016 ◽  
Vol 119 (22) ◽  
pp. 224305 ◽  
Author(s):  
J. E. Kruse ◽  
L. Lymperakis ◽  
S. Eftychis ◽  
A. Adikimenakis ◽  
G. Doundoulakis ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Selective Area Growth ◽  
Gan Nanowires ◽  
Selective Area ◽  
Area Growth
Sign in / Sign up

Export Citation Format

Share Document