scholarly journals Simple and efficient scanning tunneling luminescence detection at low-temperature

2009 ◽  
Vol 80 (12) ◽  
pp. 123704 ◽  
Author(s):  
J. G. Keizer ◽  
J. K. Garleff ◽  
P. M. Koenraad
Keyword(s):  
Low Temperature ◽  
Scanning Tunneling ◽  
Luminescence Detection ◽  
Tunneling Luminescence

Scanning Tunneling Luminescence of Individual CdSe Nanowires

Small ◽  
2011 ◽  
Vol 7 (16) ◽  
pp. 2396-2400 ◽  
Author(s):  
Theresa Lutz ◽  
Alexander Kabakchiev ◽  
Thomas Dufaux ◽  
Christian Wolpert ◽  
Zhe Wang ◽  
...  
Keyword(s):  
Scanning Tunneling ◽  
Cdse Nanowires ◽  
Tunneling Luminescence

scholarly journals Atomistic investigation of surface characteristics and electronic features at high-purity FeSi(110) presenting interfacial metallicity

2021 ◽  
Vol 118 (17) ◽  
pp. e2021203118
Author(s):  
Biao Yang ◽  
Martin Uphoff ◽  
Yi-Qi Zhang ◽  
Joachim Reichert ◽  
Ari Paavo Seitsonen ◽  
...  
Keyword(s):  
Low Temperature ◽  
Density Of States ◽  
Density Functional ◽  
Iron Silicide ◽  
Density Functional Theory Calculations ◽  
Surface Characteristics ◽  
Scanning Tunneling ◽  
Magnetic Characteristics ◽  
Tunneling Microscopy ◽  
Single Crystal Surfaces

Iron silicide (FeSi) is a fascinating material that has attracted extensive research efforts for decades, notably revealing unusual temperature-dependent electronic and magnetic characteristics, as well as a close resemblance to the Kondo insulators whereby a coherent picture of intrinsic properties and underlying physics remains to be fully developed. For a better understanding of this narrow-gap semiconductor, we prepared and examined FeSi(110) single-crystal surfaces of high quality. Combined insights from low-temperature scanning tunneling microscopy and density functional theory calculations (DFT) indicate an unreconstructed surface termination presenting rows of Fe–Si pairs. Using high-resolution tunneling spectroscopy (STS), we identify a distinct asymmetric electronic gap in the sub-10 K regime on defect-free terraces. Moreover, the STS data reveal a residual density of states in the gap regime whereby two in-gap states are recognized. The principal origin of these features is rationalized with the help of the DFT-calculated band structure. The computational modeling of a (110)-oriented slab notably evidences the existence of interfacial intragap bands accounting for a markedly increased density of states around the Fermi level. These findings support and provide further insight into the emergence of surface metallicity in the low-temperature regime.

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