Scanning Tunneling Luminescence of Individual CdSe Nanowires

Small ◽  
2011 ◽  
Vol 7 (16) ◽  
pp. 2396-2400 ◽  
Author(s):  
Theresa Lutz ◽  
Alexander Kabakchiev ◽  
Thomas Dufaux ◽  
Christian Wolpert ◽  
Zhe Wang ◽  
...  
Keyword(s):  
Scanning Tunneling ◽  
Cdse Nanowires ◽  
Tunneling Luminescence

scholarly journals Scanning tunneling microscopy and tunneling luminescence of the surface of GaN films grown by vapor phase epitaxy

1996 ◽  
Vol 68 (10) ◽  
pp. 1380-1382 ◽  
Author(s):  
B. Garni ◽  
Jian Ma ◽  
N. Perkins ◽  
Jutong Liu ◽  
T. F. Kuech ◽  
...  
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Tunneling Luminescence

Terahertz-Field-Driven Scanning Tunneling Luminescence Spectroscopy

ACS Photonics ◽  
2021 ◽  
Author(s):  
Kensuke Kimura ◽  
Yuta Morinaga ◽  
Hiroshi Imada ◽  
Ikufumi Katayama ◽  
Kanta Asakawa ◽  
...  
Keyword(s):  
Luminescence Spectroscopy ◽  
Scanning Tunneling ◽  
Tunneling Luminescence

Recent Advances in the STM-based Luminescence Microscopy of Cu(In,Ga)Se2 thin films

2009 ◽  
Vol 1165 ◽  
Author(s):  
Manuel J. Romero ◽  
Miguel A. Contreras ◽  
Ingrid Repins ◽  
Chun-Sheng Jiang ◽  
Mowafak Al-Jassim
Keyword(s):  
Thin Films ◽  
Luminescence Spectrum ◽  
Electronic Properties ◽  
High Efficiency ◽  
Luminescence Spectroscopy ◽  
Scanning Tunneling ◽  
Luminescence Microscopy ◽  
Recent Advances ◽  
Spectrum Imaging ◽  
Tunneling Luminescence

AbstractWe report on recent advances in the development of a luminescence spectroscopy based on scanning tunneling microscopy (STM) and its application to fundamental aspects of Cu(In,Ga)Se2 (CIGS) thin films. Relevant to our discussion is the specifics of the surface electronics. The CIGS shows pronounced stoichiometric deviations at the surface and, consequently, distinct surface electronics that has been shown to be critical in achieving high efficiency. Cathodoluminescence (CL), a luminescence spectrum imaging mode in scanning electron microscopy (SEM), provides a direct correlation between the microstructure of the CIGS and its electronic properties. As such, cathodoluminescence can resolve the emission spectrum between grain boundaries and grain interiors or be used to investigate the influence of local orientation and stoichiometry on the electronic properties of the CIGS at the microscale. Cathodoluminescence is not a surface microscopy, however, and resolving the electronic structure of the CIGS surface remains elusive to all luminescence microscopies. With this motivation, we have developed a luminescence microscopy based on STM, in which tunneling electrons are responsible for the excitation of luminescence (scanning tunneling luminescence or STL). The hot-tunneling-electron excitation is confined to the surface and, consequently, the tunneling luminescence spectrum reveals the electronic states near the surface. The STM is integrated inside the SEM and, therefore, both CL and STL can be measured over the same location and compared. Using this setup, the transition from the grain interior to the surface can be investigated. We have improved the collection of our optics to a level in which tunneling luminescence spectrum imaging can be performed. Here we present a detailed account on our investigation of the surface electronics in CIGS deposited in the regime of selenium deficiency as defined by <Se>/(<Cu> + <In> + < Ga >) = 1.

Scanning Tunneling Luminescence of Semiconductors

2004 ◽  
Vol 836 ◽  
Author(s):  
M. J. Romero
Keyword(s):  
Thin Films ◽  
Quantum Dots ◽  
Solar Cells ◽  
Emission Spectroscopy ◽  
Photon Emission ◽  
Scanning Tunneling ◽  
Dilute Nitride ◽  
Exploratory Research ◽  
Tunneling Microscopy ◽  
Tunneling Luminescence

ABSTRACTWe review scanning tunneling luminescence (STL) – a photon emission spectroscopy based on scanning tunneling microscopy (STM) – and report on its application to photovoltaics. As part of this exploratory research, we have investigated CuInSe2 thin films, solar cells based on quantum dots, and dilute nitride compounds. STL is very attractive because it is capable of nanometer resolution, which is being demanded by the spectacular advancement of nanoscience and nanotechnology. In addition, STM offers both unipolar and bipolar excitation of the luminescence and, consequently, the transport and recombination of electrons and holes can be investigated independently.

scholarly journals Real-Space Investigation of Intermolecular Energy Transfer by Scanning Tunneling Luminescence Spectroscopy

Hyomen Kagaku ◽  
2017 ◽  
Vol 38 (9) ◽  
pp. 455-459
Author(s):  
Hiroshi IMADA ◽  
Kuniyuki MIWA ◽  
Miyabi IMAI-IMADA ◽  
Shota KAWAHARA ◽  
Kensuke KIMURA ◽  
...  
Keyword(s):  
Energy Transfer ◽  
Real Space ◽  
Luminescence Spectroscopy ◽  
Scanning Tunneling ◽  
Intermolecular Energy ◽  
Intermolecular Energy Transfer ◽  
Tunneling Luminescence
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