Capacitance‐voltage measurements in amorphous Schottky barriers

1980 ◽  
Vol 51 (1) ◽  
pp. 413-418 ◽  
Author(s):  
Jasprit Singh ◽  
Morrel H. Cohen
Keyword(s):  
Schottky Barriers ◽  
Capacitance Voltage

Schottky Barriers on p-GaN

1995 ◽  
Vol 395 ◽  
Author(s):  
N.I. Kuznetsov ◽  
E.V. Kalinina ◽  
V.A. Soloviev ◽  
V.A. Dmitriev
Keyword(s):  
Room Temperature ◽  
Current Flow ◽  
Thermal Evaporation ◽  
Chemical Vapor ◽  
Schottky Barriers ◽  
Flow Mechanism ◽  
Vacuum Thermal Evaporation ◽  
Forward Current ◽  
Current Voltage ◽  
Capacitance Voltage

ABSTRACTSchottky barriers were formed on p-GaN. p-GaN layers doped with Mg were grown by metalorganic chemical vapor deposition (MOCVD). 6H-SiC wafers were used as substrates. The barriers were made by vacuum thermal evaporation of Au. Capacitance-voltage (C-V) and current-voltage (I-V) characteristics of the barriers were investigated. The concentration of the ionized acceptors in the p-layers was measured to be about ∼1017 cm−3. The barrier height was determined to be 2.48 eV by C - V measurements at room temperature. The forward current flow mechanism through the barriers is discussed.

A Study of the State Distribution in Various a-Si:H Materials by a New Capacitance Method

1987 ◽  
Vol 95 ◽  
Author(s):  
I. Balberg
Keyword(s):  
Hydrogenated Amorphous Silicon ◽  
Voltage Characteristic ◽  
Amorphous Semiconductors ◽  
Schottky Barriers ◽  
State Distribution ◽  
Capacitance Method ◽  
Capacitance Voltage ◽  
Silicon Materials ◽  
Hydrogenated Amorphous

AbstractA new method for the determination of the deep states density in amorphous semiconductors is presented. The method is based on the carriersemission- time dependence of the capacitance-voltage characteristics of Schottky barriers. The applicability of the method for the study of hydrogenated amorphous silicon materials is demonstrated. The pitfalls associated with trying to deduce the density of states from a single capacitance-voltage characteristic are also discussed.

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