Surface State and Interface Effects on the Capacitance‐Voltage Relationship in Schottky Barriers

1969 ◽  
Vol 40 (9) ◽  
pp. 3726-3730 ◽  
Author(s):  
C. R. Crowell ◽  
G. I. Roberts
Keyword(s):  
Surface State ◽  
Schottky Barriers ◽  
Capacitance Voltage ◽  
Voltage Relationship ◽  
Interface Effects

Surface‐State and Interface Effects in Schottky Barriers at n‐Type Silicon Surfaces

1965 ◽  
Vol 36 (12) ◽  
pp. 3843-3850 ◽  
Author(s):  
C. R. Crowell ◽  
H. B. Shore ◽  
E. E. LaBate
Keyword(s):  
Surface State ◽  
Schottky Barriers ◽  
Silicon Surfaces ◽  
Type Silicon ◽  
Interface Effects

Structural and Magneto-Electric Properties of Pulsed Laser Deposited Ferroelectric/Ferromagnetic Heterostructure

2009 ◽  
Vol 1199 ◽  
Author(s):  
Ricardo Martinez ◽  
Ashok Kumar ◽  
Ratnakar Palai ◽  
Ram S. Katiyar
Keyword(s):  
Elevated Temperatures ◽  
High Strain ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Ferromagnetic Behavior ◽  
Asymmetric Behavior ◽  
Normal Behavior ◽  
Wide Range ◽  
Capacitance Voltage ◽  
Voltage Relationship

AbstractAsymmetric superlattices (SLs) with ferromagnetic La0.7Sr0.3MnO3 (LSMO) and ferroelectric Ba0.7Sr0.3TiO3 (BST) as constitutive layers were fabricated on conducting LaNiO3 (LNO) coated (001) oriented MgO substrates using pulsed laser deposition (PLD). The crystallinity, ferroelectric and magnetic properties of the SLs were studied over a wide range of temperatures and frequencies. The structure exhibited ferromagnetic behavior at 300K, and ferroelectric behavior over a range of temperatures between 100K and 300K. The dielectric response as a function of frequency obeys normal behavior below 300 K, whereas it follows Maxwell–Wagner model at elevated temperatures. The effect of ferromagnetic LSMO layers on ferroelectric properties of the SL indicated strong influence of the interfaces. The asymmetric behavior of ferroelectric loop and the capacitance-voltage relationship suggest development of a built field in the SLs due to high strain across the interfaces.

Capacitance‐voltage measurements in amorphous Schottky barriers

1980 ◽  
Vol 51 (1) ◽  
pp. 413-418 ◽  
Author(s):  
Jasprit Singh ◽  
Morrel H. Cohen
Keyword(s):  
Schottky Barriers ◽  
Capacitance Voltage

Schottky Barriers on p-GaN

1995 ◽  
Vol 395 ◽  
Author(s):  
N.I. Kuznetsov ◽  
E.V. Kalinina ◽  
V.A. Soloviev ◽  
V.A. Dmitriev
Keyword(s):  
Room Temperature ◽  
Current Flow ◽  
Thermal Evaporation ◽  
Chemical Vapor ◽  
Schottky Barriers ◽  
Flow Mechanism ◽  
Vacuum Thermal Evaporation ◽  
Forward Current ◽  
Current Voltage ◽  
Capacitance Voltage

ABSTRACTSchottky barriers were formed on p-GaN. p-GaN layers doped with Mg were grown by metalorganic chemical vapor deposition (MOCVD). 6H-SiC wafers were used as substrates. The barriers were made by vacuum thermal evaporation of Au. Capacitance-voltage (C-V) and current-voltage (I-V) characteristics of the barriers were investigated. The concentration of the ionized acceptors in the p-layers was measured to be about ∼1017 cm−3. The barrier height was determined to be 2.48 eV by C - V measurements at room temperature. The forward current flow mechanism through the barriers is discussed.

A Study of the State Distribution in Various a-Si:H Materials by a New Capacitance Method

1987 ◽  
Vol 95 ◽  
Author(s):  
I. Balberg
Keyword(s):  
Hydrogenated Amorphous Silicon ◽  
Voltage Characteristic ◽  
Amorphous Semiconductors ◽  
Schottky Barriers ◽  
State Distribution ◽  
Capacitance Method ◽  
Capacitance Voltage ◽  
Silicon Materials ◽  
Hydrogenated Amorphous

AbstractA new method for the determination of the deep states density in amorphous semiconductors is presented. The method is based on the carriersemission- time dependence of the capacitance-voltage characteristics of Schottky barriers. The applicability of the method for the study of hydrogenated amorphous silicon materials is demonstrated. The pitfalls associated with trying to deduce the density of states from a single capacitance-voltage characteristic are also discussed.

Electron Spectroscopy and Holography of Electrically Active Electroceramic Interfaces

1997 ◽  
Vol 3 (S2) ◽  
pp. 655-656
Author(s):  
Kevin Johnson ◽  
V. Ravikumar ◽  
R. Rodrigues ◽  
Vinayak P. Dravid
Keyword(s):  
Space Charge ◽  
Schottky Barriers ◽  
Positive Temperature ◽  
Potential Barriers ◽  
The Core ◽  
Current Voltage ◽  
Ptcr Effect ◽  
Charged Defects ◽  
Current Voltage Relationship ◽  
Voltage Relationship

Many electroceramics derive their technologically useful and scientifically appealing properties through electrically active grain boundaries (GBs). Examples of such properties include traditional nonlinear current-voltage relationship (i.e. varistor behavior) and positive temperature of coefficient of resistance (PTCR effect), to recently “rediscovered” phenomena of space-charge formation across functional interfaces, including ferroeletric thin films.In many such cases, the transport of charge across these interfaces is mediated through potential barriers which form at the core of these interfaces. For example, varistor behavior is attributed to formation of Schottky barriers at GBs which modify the transport of electrons, leading to the nonlinearity in I-V characteristics. The formation of Schottky barrier at the GB core, in turn, is attributed to the formation of space-charge across GBs. The formation of space-charge, further, is clearly attributable to decoration of GB core with charged defects with compensating opposite charge across the GB. The presence, sign, magnitude and spatial distribution of space-charge form the key to understand the Schottky barriers, thus the transport properties of interfacial systems.

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