GaAs buffer layer morphology and lateral distributions of InGaAs quantum dots

2005 ◽  
Vol 23 (3) ◽  
pp. 1226 ◽  
Author(s):  
A. Roshko ◽  
T. E. Harvey ◽  
S. Y. Lehman ◽  
R. P. Mirin ◽  
K. A. Bertness ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Buffer Layer ◽  
Gaas Buffer Layer

High quality InAs quantum dots grown on patterned Si with a GaAs buffer layer

2009 ◽  
Vol 20 (30) ◽  
pp. 305301 ◽  
Author(s):  
Y Wang ◽  
J Zou ◽  
Z M Zhao ◽  
Z Hao ◽  
K L Wang
Keyword(s):  
Quantum Dots ◽  
Buffer Layer ◽  
High Quality ◽  
Inas Quantum Dots ◽  
Gaas Buffer Layer

Evidence of coupling between InAs self-assembled quantum dots in thin GaAs buffer layer

2005 ◽  
Vol 26 (1-4) ◽  
pp. 276-280 ◽  
Author(s):  
E.T. Cho ◽  
H.D. Lee ◽  
D.W. Lee ◽  
J.I. Lee ◽  
S.I. Jung ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Buffer Layer ◽  
Gaas Buffer Layer ◽  
Self Assembled

Site-controlled InAs quantum dots grown on a 55 nm thick GaAs buffer layer

2009 ◽  
Vol 95 (24) ◽  
pp. 243106 ◽  
Author(s):  
T. J. Pfau ◽  
A. Gushterov ◽  
J. P. Reithmaier ◽  
I. Cestier ◽  
G. Eisenstein ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Buffer Layer ◽  
Inas Quantum Dots ◽  
Gaas Buffer Layer

scholarly journals Photoreflectance study of the GaAs buffer layer in InAs/GaAs quantum dots

2017 ◽  
Vol 30 (4) ◽  
pp. 56-60
Author(s):  
Diego Javier Sánchez Trujillo ◽  
Jhon Jairo Prías Barragán ◽  
Hernando Ariza Calderón ◽  
Álvaro Orlando Pulzara Mora ◽  
Máximo López López
Keyword(s):  
Quantum Dots ◽  
Electric Field ◽  
Buffer Layer ◽  
Surface Passivation ◽  
Bending Energy ◽  
Gaas Sample ◽  
Band Bending ◽  
Gaas Buffer Layer ◽  
Order Of Magnitude ◽  
The Difference

GaAs buffer layer in InAs/GaAs quantum dots (QDs) was investigated by Photoreflectance (PR) technique at 300 K. PR spectra obtained were compared with commercial GaAs sample PR spectra, and they were analyzed by using the derivative Lorentzian functions as proposed by Aspnes in the middle field regimen. PR spectra in InAs/GaAs QDs sample was attributed to the photoreflectance response in the GaAs buffer layer. Band bending energies were calculated for laser intensities from 1 mW to 21 mW. The photoreflectance comparative study in the samples was realized considering the difference in the parameters: electric field on the surface, broadening parameter, energy gained by photoexcited carriers due to the electric field applied, frequency of light and heavy holes and band bending energy values. The results suggest that the presence of InAs quantum dots increases the light and heavy holes frequencies and the band bending energy values; and decreases the electric field on the surface, the broadening parameter and the energy gained by photoexcited carriers. We found that InAs QDs presence modifies the surface electrical field around one order of magnitude in the GaAs buffer layer and this behavior can be attributed to surface passivation.

Size control of InAs quantum dots on 2°-off GaAs (100) substrate by the thickness of GaAs buffer layer

2001 ◽  
Vol 223 (4) ◽  
pp. 450-455 ◽  
Author(s):  
Hyo Jin Kim ◽  
Young Ju Park ◽  
Eun Kyu Kim ◽  
Tae Whan Kim
Keyword(s):  
Quantum Dots ◽  
Buffer Layer ◽  
Size Control ◽  
Inas Quantum Dots ◽  
Gaas Buffer Layer

Optical properties of InAs quantum dots grown on patterned Si with a thin GaAs buffer layer

2008 ◽  
Vol 92 (8) ◽  
pp. 083111 ◽  
Author(s):  
Zuoming Zhao ◽  
Zhibiao Hao ◽  
Kameshwar Yadavalli ◽  
Kang L. Wang ◽  
Ajey P. Jacob
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Buffer Layer ◽  
Inas Quantum Dots ◽  
Gaas Buffer Layer

Characterization of GaAs buffer layer function in GaAs/InP strained structure grown by MBE

1996 ◽  
Vol 286 (1-2) ◽  
pp. 107-110 ◽  
Author(s):  
Ching-Ting Lee ◽  
Chi-Yu Wang ◽  
Yeong-Chang Chou
Keyword(s):  
Buffer Layer ◽  
Layer Function ◽  
Gaas Buffer Layer

scholarly journals Liquid phase epitaxial growth of high quality GaAs on InP using Se‐doped GaAs buffer layer and grating‐patterned substrates

1995 ◽  
Vol 66 (19) ◽  
pp. 2531-2533 ◽  
Author(s):  
Dong‐Keun Kim ◽  
Ju‐Heon Ahn ◽  
Byung‐Teak Lee ◽  
H. J. Lee ◽  
S. S. Cha ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Patterned Substrates ◽  
High Quality ◽  
Liquid Phase Epitaxial ◽  
Gaas Buffer Layer ◽  
Liquid Phase Epitaxial Growth
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