Purified Si film formation from metallurgical-grade Si by hydrogen plasma induced chemical transport

2009 ◽  
Vol 95 (18) ◽  
pp. 181506 ◽  
Author(s):  
Hiromasa Ohmi ◽  
Akihiro Goto ◽  
Daiki Kamada ◽  
Yoshinori Hamaoka ◽  
Hiroaki Kakiuchi ◽  
...  
Keyword(s):  
Film Formation ◽  
Hydrogen Plasma ◽  
Chemical Transport

Silicon film formation by chemical transport in atmospheric-pressure pure hydrogen plasma

2007 ◽  
Vol 102 (2) ◽  
pp. 023302 ◽  
Author(s):  
Hiromasa Ohmi ◽  
Hiroaki Kakiuchi ◽  
Yoshinori Hamaoka ◽  
Kiyoshi Yasutake
Keyword(s):  
Atmospheric Pressure ◽  
Film Formation ◽  
Hydrogen Plasma ◽  
Silicon Film ◽  
Chemical Transport ◽  
Pure Hydrogen

Chemical transport of boron in a low pressure hydrogen plasma

1985 ◽  
Vol 4 (1) ◽  
pp. 51-54 ◽  
Author(s):  
Shojiro Komatsu ◽  
Toyonobu Yoshida ◽  
Kazuo Akashi
Keyword(s):  
Hydrogen Plasma ◽  
Chemical Transport ◽  
Low Pressure ◽  
Pressure Hydrogen

Diamond film formation by laser evaporation of highly dispersive diamond in a hydrogen plasma environment

1995 ◽  
Vol 4 (10) ◽  
pp. 1200-1204
Author(s):  
V.G. Babaev ◽  
M.B. Guseva ◽  
A.Yu. Bregadze ◽  
V.V. Khvostov ◽  
A.N. Obraztsov ◽  
...  
Keyword(s):  
Diamond Film ◽  
Film Formation ◽  
Hydrogen Plasma ◽  
Laser Evaporation ◽  
Plasma Environment

Effect of Hydrogen Plasma Treatments at very High Frequency on p-Type Amorphous and Microcrystalline Silicon Films

1998 ◽  
Vol 536 ◽  
Author(s):  
E. Centurioni ◽  
A. Desalvo ◽  
R. Pinghini ◽  
R. Rizzoli ◽  
C. Summonte ◽  
...  
Keyword(s):  
High Frequency ◽  
Hydrogen Plasma ◽  
Chemical Vapour ◽  
Chemical Transport ◽  
Optical Measurements ◽  
Ex Situ ◽  
Very High Frequency ◽  
Flow Rates ◽  
Plasma Treatments ◽  
Very High

AbstractVery high frequency (100 MHz) hydrogen plasma treatments on a-Si:H deposited by plasma enhanced chemical vapour deposition were studied. Ex-situ optical measurements have shown that etching and chemical transport occur as competing phenomena. The one that prevails is determined by the plasma conditions. In particular, very efficient chemical etching is observed for high H2 flow rates, while, for low H2 flow rates, the equilibrium is shifted toward deposition, and a structural modification of the sample is observed. The experimental conditions were stressed in the direction of utilizing chemical transport from the cathode to deposit very thin (7 nm) microcrystalline films with a pure H2 plasma.

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