Charging dynamics of integrated circuit passivation layer probe holes in the electron beam tester

This paper discusses the role of scanning electron beam lithography in semiconductor microcircuit production and in the experimental fabrication of devices in the laboratory. It also describes the electron optical equipment developed for these applications.Electron beam lithography has found an important place in integrated circuit production through its ability to produce structures without masks, rather than because it can produce high resolution. Resolution, however, has been important in research and development where electron beams have been used to produce smaller devices than any other method. Many early micron and sub-micron large scale integration devices were built first with electron beams, and structures as small as a few tens of nanometers have been made for electrical characterization.Optical methods are generally more economical than electron beams for the routine production of microcircuits because exposure rates are higher and system costs are lower. Resolution with optical lithography is adequate for all devices likely to be in production in the next few years (minimum linewidth 0.75μ - 2μ) so electron beams at present only offer an advantage in fabricating masks, or in exposing customized wafers where masks are not replicated a sufficiently large number of times to offset their cost.

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Electron‐beam annealing of ion‐implantation damage in integrated‐circuit devices

Journal of Applied Physics ◽

10.1063/1.326163 ◽

1979 ◽

Vol 50 (3) ◽

pp. 1308-1311 ◽

Cited By ~ 12

Author(s):

T. I. Kamins ◽

P. H. Rose

Keyword(s):

Electron Beam ◽

Ion Implantation ◽

Integrated Circuit ◽

Implantation Damage

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Studies of Buried Voids Capturing with e-Beam Inspection System and Confirmation with Physical Failure Analysis

ISTFA 2012: Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2012p0606 ◽

2012 ◽

Author(s):

Hong Xiao ◽

Ximan Jiang

Keyword(s):

Electron Beam ◽

Electron Microscope ◽

Failure Analysis ◽

Integrated Circuit ◽

Focused Ion Beam ◽

Ion Beam ◽

Energetic Electron ◽

Optical Microscope ◽

Inspection System ◽

Dual Beam

Abstract In this paper, a novel inspection mode of electron beam inspection (EBI) that can effectively detect buried voids in tungsten (W) plugs is reported for the first time. Buried voids in metal are a defect of interest (DOI) that cannot be captured by either optical inspection or traditional EBI modes. The detection of buried voids is achieved by using energetic electron beam (e-beam) with energy high enough to penetrate into metal and reach the buried void. By selecting desired secondary electrons to form the inspection images, strong contrast between the defective tungsten plugs and normal ones can be achieved. Failure analysis was performed on the DOI that is unique to this new EBI mode. After optical microscope locating and laser marking, we successfully recaptured DOI with scanning electron microscope (SEM) and capped the DOI with e-beam assisted platinum (Pt) deposition. Later a dual-beam focused ion beam (FIB) system was used to re-locate the Pt-capped DOI and prepare samples for transmission electron microscope (TEM). TEM images confirmed the unique DOI were buried voids in the metal plugs, which could affect resistance of interconnect in integrated circuit (IC) chip and impact the IC yield.

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