High reflectivity airgap distributed Bragg reflectors realized by wet etching of AlInN sacrificial layers

2009 ◽  
Vol 95 (19) ◽  
pp. 191102 ◽  
Author(s):  
Alexei Altoukhov ◽  
Jacques Levrat ◽  
Eric Feltin ◽  
Jean-François Carlin ◽  
Antonino Castiglia ◽  
...  
Keyword(s):  
Wet Etching ◽  
Bragg Reflectors ◽  
Distributed Bragg Reflectors ◽  
High Reflectivity ◽  
Sacrificial Layers

High reflectivity III-nitride UV-C distributed Bragg reflectors for vertical cavity emitting lasers

2016 ◽  
Vol 120 (13) ◽  
pp. 135703 ◽  
Author(s):  
A. Franke ◽  
M. P. Hoffmann ◽  
R. Kirste ◽  
M. Bobea ◽  
J. Tweedie ◽  
...  
Keyword(s):  
Bragg Reflectors ◽  
Distributed Bragg Reflectors ◽  
High Reflectivity ◽  
Emitting Lasers ◽  
Vertical Cavity ◽  
Uv C

High reflectivity and crack-free AlGaN/AlN ultraviolet distributed Bragg reflectors

2002 ◽  
Vol 20 (3) ◽  
pp. 1229 ◽  
Author(s):  
A. Bhattacharyya ◽  
Sandeep Iyer ◽  
E. Iliopoulos ◽  
A. V. Sampath ◽  
J. Cabalu ◽  
...  
Keyword(s):  
Bragg Reflectors ◽  
Distributed Bragg Reflectors ◽  
High Reflectivity

Fabrication and Characteristics of GaN-Based Microcavity Light-Emitting Diodes with High Reflectivity AlN/GaN Distributed Bragg Reflectors

2006 ◽  
Vol 45 (4B) ◽  
pp. 3446-3448 ◽  
Author(s):  
Yu-Chun Peng ◽  
Chih-Chiang Kao ◽  
Hung-Wen Huang ◽  
Jung-Tang Chu ◽  
Tien-Chang Lu ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Bragg Reflectors ◽  
Distributed Bragg Reflectors ◽  
Light Emitting ◽  
High Reflectivity

High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVD

2011 ◽  
Vol 26 (5) ◽  
pp. 055013 ◽  
Author(s):  
C M Wu ◽  
B P Zhang ◽  
J Z Shang ◽  
L E Cai ◽  
J Y Zhang ◽  
...  
Keyword(s):  
Bragg Reflectors ◽  
Distributed Bragg Reflectors ◽  
Sapphire Substrates ◽  
High Reflectivity

High Reflectivity Hybrid AlGaN/Silver Distributed Bragg Reflectors for Use in the UV-Visible Spectrum

2017 ◽  
Vol 53 (6) ◽  
pp. 1-8 ◽  
Author(s):  
Karan Mehta ◽  
Theeradetch Detchprohm ◽  
Young Jae Park ◽  
Yuh-Shiuan Liu ◽  
Oliver Moreno ◽  
...  
Keyword(s):  
Visible Spectrum ◽  
Bragg Reflectors ◽  
Distributed Bragg Reflectors ◽  
High Reflectivity ◽  
Uv Visible

High-reflectivity ultraviolet AlGaN∕AlGaN distributed Bragg reflectors

2006 ◽  
Vol 88 (17) ◽  
pp. 171101 ◽  
Author(s):  
O. Mitrofanov ◽  
S. Schmult ◽  
M. J. Manfra ◽  
T. Siegrist ◽  
N. G. Weimann ◽  
...  
Keyword(s):  
Bragg Reflectors ◽  
Distributed Bragg Reflectors ◽  
High Reflectivity

Effect of In as Surfactant on the Growth of AlN/GaN Distributed Bragg Reflectors by Metal Organic Vapor Phase Epitaxy

2008 ◽  
Vol 1108 ◽  
Author(s):  
L E Rodak ◽  
D Korakakis
Keyword(s):  
Refractive Index ◽  
Vapor Phase ◽  
Lattice Mismatch ◽  
Vapor Phase Epitaxy ◽  
Cavity Surface ◽  
Bragg Reflectors ◽  
Distributed Bragg Reflectors ◽  
Organic Vapor ◽  
High Reflectivity ◽  
Metal Organic

AbstractNitride based Distributed Bragg Reflectors (DBRs) have several important applications in current nitride based optoelectronic devices. DBRs can be implemented in resonant cavity light emitting diodes (RCLEDs) to improve light extraction and obtain a more directional emission and in vertical cavity surface emitting lasers (VCSELs) to achieve a lower threshold current. Due the large contrast in refractive index, AlN/GaN DRBs are practical for obtaining high reflectivity and wide bandwidth using relatively few periods. Cracking of the samples is typical for AlN/GaN DRBs due to the tensile strain which results from the 2.4% lattice mismatch and to the difference in thermal expansion coefficients. In addition to cracks, v-shaped defects may also arise in the surface due to surface undulation from stored elastic misfit strain or from threading dislocations that result in scattering and diffraction. Several techniques to reduce the number of cracks and defects have been investigated to obtain smooth surface morphology and high reflectivity, e.g. superlattices to reduce the strain or the growth of AlInGaN/GaN DBRs that offer less lattice mismatch but also lower refractive index contrast. In this work, results of the use of Indium (In) as a surfactant in Metal Organic Vapor Phase Epitaxy (MOVPE) will be discussed. This study addresses AlN/GaN DBR structures designed for peak reflectivity around 465 nm. During the AlN layers’ growth, trimethylindium was introduced to the system and resulted in a reduction of surface cracks. Results of growths at In flow rates are reported and discussed.

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