High reflectivity III-nitride UV-C distributed Bragg reflectors for vertical cavity emitting lasers

2016 ◽  
Vol 120 (13) ◽  
pp. 135703 ◽  
Author(s):  
A. Franke ◽  
M. P. Hoffmann ◽  
R. Kirste ◽  
M. Bobea ◽  
J. Tweedie ◽  
...  
Keyword(s):  
Bragg Reflectors ◽  
Distributed Bragg Reflectors ◽  
High Reflectivity ◽  
Emitting Lasers ◽  
Vertical Cavity ◽  
Uv C

scholarly journals GaN-based Vertical-Cavity Surface-Emitting Lasers Incorporating Dielectric Distributed Bragg Reflectors

2019 ◽  
Vol 9 (4) ◽  
pp. 733 ◽  
Author(s):  
Tatsushi Hamaguchi ◽  
Hiroshi Nakajima ◽  
Noriyuki Fuutagawa
Keyword(s):  
Continuous Wave ◽  
Epitaxial Lateral Overgrowth ◽  
Cavity Surface ◽  
Bragg Reflectors ◽  
Distributed Bragg Reflectors ◽  
Practical Applications ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

This paper reviews past research and the current state-of-the-art concerning gallium nitride-based vertical-cavity surface-emitting lasers (GaN-VCSELs) incorporating distributed Bragg reflectors (DBRs). This paper reviews structures developed during the early stages of research into these devices, covering both major categories of GaN-based VCSELs: hybrid-DBR and all-dielectric-DBR. Although both types exhibited satisfactory performance during continuous-wave (CW) operation in conjunction with current injection as early as 2008, GaN-VCSELs have not yet been mass produced for several reasons. These include the difficulty in controlling the thicknesses of nitride semiconductor layers in hybrid-DBR type devices and issues related to the cavity dimensions in all-dielectric-DBR units. Two novel all-dielectric GaN-based VCSEL concepts based on different structures are examined herein. In one, the device incorporates dielectric DBRs at both ends of the cavity, with one DBR embedded in n-type GaN grown using the epitaxial lateral overgrowth technique. The other concept incorporates a curved mirror fabricated on (000-1) GaN. Both designs are intended to mitigate challenges regarding industrial-scale processing that are related to the difficulty in controlling the cavity length, which have thus far prevented practical applications of all-dielectric GaN-based VCSELs.

Low-threshold lasing of InGaN vertical-cavity surface-emitting lasers with dielectric distributed Bragg reflectors

2003 ◽  
Vol 83 (5) ◽  
pp. 830-832 ◽  
Author(s):  
Takehiko Tawara ◽  
Hideki Gotoh ◽  
Tetsuya Akasaka ◽  
Naoki Kobayashi ◽  
Tadashi Saitoh
Keyword(s):  
Cavity Surface ◽  
Bragg Reflectors ◽  
Distributed Bragg Reflectors ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Low Threshold ◽  
Emitting Lasers ◽  
Vertical Cavity

Distributed Bragg Reflectors for Vertical-Cavity Surface-Emitting Lasers

MRS Bulletin ◽  
2002 ◽  
Vol 27 (7) ◽  
pp. 520-524 ◽  
Author(s):  
W.G. Breiland ◽  
A.A. Allerman ◽  
J.F. Klem ◽  
K.E. Waldrip
Keyword(s):  
Materials Science ◽  
Laser Cavity ◽  
Cavity Surface ◽  
Bragg Reflectors ◽  
Distributed Bragg Reflectors ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Emitting Lasers ◽  
Vertical Cavity

AbstractDistributed Bragg reflectors (DBRs) not only serve as high-reflectance mirrors to define the laser cavity of a vertical-cavity surface-emitting laser (VCSEL), but they also must conduct electricity, confine currents, and provide a single-crystal template for the gain region of the laser. Basic optical and electrical properties of DBRs are presented in this article. Three examples of DBR structures used in VCSEL applications from the ultraviolet to the infrared are given to illustrate the complexity and range of materials science issues that are encountered in DBR growth. Fabrication issues are also discussed.

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