Accelerated interface defect removal in amorphous/crystalline silicon heterostructures using pulsed annealing and microwave heating

2009 ◽  
Vol 95 (18) ◽  
pp. 182108 ◽  
Author(s):  
T. F. Schulze ◽  
H. N. Beushausen ◽  
T. Hansmann ◽  
L. Korte ◽  
B. Rech
Keyword(s):  
Microwave Heating ◽  
Crystalline Silicon ◽  
Interface Defect ◽  
Silicon Heterostructures

Photocarrier Radiometric Lifetime Measurements of Intrinsic Amorphous-Crystalline Silicon Heterostructure

2006 ◽  
Vol 910 ◽  
Author(s):  
Keith R Leong ◽  
Andreas Mandelis ◽  
Nazir P Kherani ◽  
Stefan Zukotynski
Keyword(s):  
Silicon Surface ◽  
Surface Passivation ◽  
Crystalline Silicon ◽  
Amorphous Film ◽  
Surface Cleaning ◽  
Native Oxide ◽  
Transport Parameters ◽  
Lifetime Measurements ◽  
Dc Saddle Field ◽  
Silicon Heterostructures

AbstractIntrinsic hydrogenated amorphous silicon films were deposited by the DC saddle field system on crystalline silicon wafers. The substrate temperature of the amorphous film, crystalline silicon surface cleaning schemes, and the native oxide etchant were varied. The transport parameters of the amorphous-crystalline silicon heterostructures were evaluated by Photocarrier Radiometric (PCR) lifetime measurements. PCR bulk lifetime estimates were obtained using the quinhydrone in methanol solution to passivate the crystalline silicon surface. We present the effectiveness of the PCR system in evaluating different surface passivation schemes.

Two Step Process for the Growth of a Thin Layer of Silicon Dioxide for Tunneling Effect Applications

2000 ◽  
Vol 619 ◽  
Author(s):  
Hugo Águas ◽  
Ana Cabrita ◽  
Pedro Tonello ◽  
Patricia Nunes ◽  
Elvira Fortunato ◽  
...  
Keyword(s):  
Low Temperature ◽  
Crystalline Silicon ◽  
Defect Density ◽  
Oxide Thickness ◽  
Interface Roughness ◽  
Tunneling Effect ◽  
Main Role ◽  
Temperature Oxidation ◽  
Wet Process ◽  
Interface Defect

ABSTRACTIn today's main crystalline silicon (c-Si) applications in MOS (metal-oxide-silicon), MIS (metalinsulator-semiconductor) or SIS (Semiconductor-Insulator-Semiconductor), the growing of the oxide layer plays the main role, dictating the device performances, in particular if it has to be grown by a low temperature process. Of fundamental importance is the SiO2 interface with the c-Si. A very low defect density interface is desirable so that the number of trapping states can be reduced and the devices performance optimised.A two step low temperature oxidation process is proposed. The process consists of growing first a layer of oxide by a wet process and then treating the grown oxide with an oxygen plasma. The oxygen ions from the plasma bombard the oxide causing compaction of the oxide and a decrease in the interface roughness and defect density.Infrared spectroscopy and spectroscopic ellipsometry measurements were performed on the samples to determine the oxide thickness, optical and structural properties. SIS structures were built and capacitance measurements were performed under dark and illuminated conditions from which were inferred the interface defect density and correlated with the oxide growth process.

Electroluminescence from amorphous–crystalline silicon heterostructures

2004 ◽  
Vol 338-340 ◽  
pp. 440-443 ◽  
Author(s):  
M.S. Bresler ◽  
O.B. Gusev ◽  
E.I. Terukov ◽  
W. Fuhs ◽  
A. Froitzheim ◽  
...  
Keyword(s):  
Crystalline Silicon ◽  
Silicon Heterostructures
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