Beryllium doping and diffusion in molecular‐beam epitaxy of GaAs and AlxGa1−xAs

1977 ◽  
Vol 48 (3) ◽  
pp. 1278-1287 ◽  
Author(s):  
M. Ilegems
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Beryllium Doping ◽  
And Diffusion

Minority carrier lifetime and diffusion length in HgTe/CdTe superlattices by molecular beam epitaxy

1992 ◽  
Vol 61 (10) ◽  
pp. 1196-1198 ◽  
Author(s):  
S. H. Shin ◽  
J. M. Arias ◽  
M. Zandian ◽  
J. G. Pasko ◽  
J. Bajaj ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Minority Carrier Lifetime ◽  
And Diffusion

Mg doping and diffusion in (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy

2021 ◽  
Vol 130 (23) ◽  
pp. 235301
Author(s):  
Akhil Mauze ◽  
Yuewei Zhang ◽  
Takeki Itoh ◽  
Thomas E. Mates ◽  
Hartwin Peelaers ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Mg Doping ◽  
And Diffusion

Reduction of buffer layer conduction near plasma-assisted molecular-beam epitaxy grown GaN/AlN interfaces by beryllium doping

2002 ◽  
Vol 81 (20) ◽  
pp. 3819-3821 ◽  
Author(s):  
D. F. Storm ◽  
D. S. Katzer ◽  
S. C. Binari ◽  
E. R. Glaser ◽  
B. V. Shanabrook ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Beryllium Doping

scholarly journals Defect formation and diffusion mechanism in ion-assisted molecular-beam epitaxy

1992 ◽  
Vol 46 (11) ◽  
pp. 7103-7109 ◽  
Author(s):  
C. J. Tsai ◽  
T. Vreeland ◽  
H. A. Atwater
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Formation ◽  
Diffusion Mechanism ◽  
And Diffusion

scholarly journals Transformation of addimers >Ge=GeGe=SiSi=Si< on the relaxed side of Si (001) (4 × 2)

Surface ◽  
2021 ◽  
Vol 13(28) ◽  
pp. 66-74
Author(s):  
M. I. Terebinska ◽  
◽  
O. I. Tkachuk ◽  
A. M. Datsyuk ◽  
O. V. Filonenko ◽  
...  
Keyword(s):  
Density Functional Theory ◽  
Molecular Beam Epitaxy ◽  
Energy Barrier ◽  
Density Functional ◽  
Molecular Beam ◽  
Functional Theory ◽  
Crystalline Surface ◽  
Degenerate States ◽  
Method Of Density Functional ◽  
And Diffusion

By the method of density functional theory (B3LYP, 6-31G **) three types of displacements are calculated, namely oscillations as a whole, rotation and diffusion of dimers > Ge = Ge <, > Ge = Si < and > Si = Si <, which are formed on the crystalline surface of Si (001) (4×2) during the deposition of germanium atoms under conditions of molecular beam epitaxy. Calculations of angles of buckling of addimers are carried out. It is shown that when the addimers as a whole oscillate around the equilibrium position, the energy barriers are quite low, the highest of them occurs for a mixed addimer > Si = Ge <. Pure adders > Ge = Ge < and > Si = Si < oscillate between two degenerate states with an energy barrier of 0.042 and 0.014 eV, respectively. The structures of the transition state and the intermediate when the addimer > Ge = Ge < is moved between adjacent cells in the approximation of the constant bond length > Ge = Ge < are obtained. As calculations have shown, all transformations of surface dimers occur with relatively small activation energies, the numerical values of which agree satisfactorily with the results of STM experiments available in the literature.

Growth, Antimony Incorporation Behaviour and Beryllium Doping of GaAs 1−y Sb y Grown on GaAs by Molecular Beam Epitaxy

2008 ◽  
Vol 25 (12) ◽  
pp. 4466-4468 ◽  
Author(s):  
Gao Han-Chao ◽  
Wang Wen-Xin ◽  
Jiang Zhong-Wei ◽  
Liu Jian ◽  
Yang Cheng-Liang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Beryllium Doping

ABRUPT BORON PROFILES BY SILICON-MBE

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4285-4288 ◽  
Author(s):  
M. OEHME ◽  
E. KASPER
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Temperature Regime ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Dopant Profile ◽  
Dopant Atoms ◽  
And Diffusion

Surface segregation and diffusion are the dominant mechanisms for profile smearing. However in the low temperature regime below 600°C diffusion is negligible. We investigated the dopant profile during silicon molecular beam epitaxy (MBE) in silicon (100). A method for measurement of the adlayer density of segregating dopant atoms is suggested. We utilize the results of this experiment to generate very sharp boron profiles. For the doping we use the pre-build up method with constant boron flux.

Beryllium doping in Ga0.47In0.53As and Al0.48In0.52As grown by molecular‐beam epitaxy

1981 ◽  
Vol 52 (7) ◽  
pp. 4672-4675 ◽  
Author(s):  
K. Y. Cheng ◽  
A. Y. Cho ◽  
W. A. Bonner
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Beryllium Doping
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