Beryllium doping in Ga0.47In0.53As and Al0.48In0.52As grown by molecular‐beam epitaxy

1981 ◽  
Vol 52 (7) ◽  
pp. 4672-4675 ◽  
Author(s):  
K. Y. Cheng ◽  
A. Y. Cho ◽  
W. A. Bonner
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Beryllium Doping

Reduction of buffer layer conduction near plasma-assisted molecular-beam epitaxy grown GaN/AlN interfaces by beryllium doping

2002 ◽  
Vol 81 (20) ◽  
pp. 3819-3821 ◽  
Author(s):  
D. F. Storm ◽  
D. S. Katzer ◽  
S. C. Binari ◽  
E. R. Glaser ◽  
B. V. Shanabrook ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Beryllium Doping

Growth, Antimony Incorporation Behaviour and Beryllium Doping of GaAs 1−y Sb y Grown on GaAs by Molecular Beam Epitaxy

2008 ◽  
Vol 25 (12) ◽  
pp. 4466-4468 ◽  
Author(s):  
Gao Han-Chao ◽  
Wang Wen-Xin ◽  
Jiang Zhong-Wei ◽  
Liu Jian ◽  
Yang Cheng-Liang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Beryllium Doping

The effects of beryllium doping in InGaAlAs layers grown by molecular beam epitaxy

1998 ◽  
Vol 193 (3) ◽  
pp. 285-292 ◽  
Author(s):  
S.F. Yoon ◽  
P.H. Zhang ◽  
H.Q. Zheng ◽  
K. Radhakrishnan ◽  
G.I. Ng
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Beryllium Doping

Bismuth surfactant effects for GaAsN and beryllium doping of GaAsN and GaInAsN grown by molecular beam epitaxy

2007 ◽  
Vol 304 (2) ◽  
pp. 402-406 ◽  
Author(s):  
Ting Liu ◽  
Sandeep Chandril ◽  
A.J. Ptak ◽  
D. Korakakis ◽  
T.H. Myers
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Beryllium Doping ◽  
Surfactant Effects

Incorporation-related structural issues for beryllium doping during growth of GaN by rf-plasma molecular-beam epitaxy

2001 ◽  
Vol 79 (27) ◽  
pp. 4524-4526 ◽  
Author(s):  
A. J. Ptak ◽  
Lijun Wang ◽  
N. C. Giles ◽  
T. H. Myers ◽  
L. T. Romano ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Rf Plasma ◽  
Beryllium Doping

Defects in Heavily-Doped MBE GaAs

1982 ◽  
Vol 40 ◽  
pp. 442-445
Author(s):  
C.B. Carter ◽  
D.M. DeSimone ◽  
T. Griem ◽  
C.E.C. Wood
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Heavily Doped

Molecular-beam epitaxy (MBE) is potentially an extremely valuable tool for growing III-V compounds. The value of the technique results partly from the ease with which controlled layers of precisely determined composition can be grown, and partly from the ability that it provides for growing accurately doped layers.

An in situ and ex situ TEM study of the formation of thin cobalt silicide films by molecular beam epitaxy on the silicon (100) surface

1988 ◽  
Vol 46 ◽  
pp. 884-885
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove ◽  
R. T. Tung
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Density ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Metal Base ◽  
In Situ Experiments ◽  
Potential Applications

The cobalt disilicide/silicon system has potential applications as a metal-base and as a permeable-base transistor. Although thin, low defect density, films of CoSi2 on Si(111) have been successfully grown, there are reasons to believe that Si(100)/CoSi2 may be better suited to the transmission of electrons at the silicon/silicide interface than Si(111)/CoSi2. A TEM study of the formation of CoSi2 on Si(100) is therefore being conducted. We have previously reported TEM observations on Si(111)/CoSi2 grown both in situ, in an ultra high vacuum (UHV) TEM and ex situ, in a conventional Molecular Beam Epitaxy system.The procedures used for the MBE growth have been described elsewhere. In situ experiments were performed in a JEOL 200CX electron microscope, extensively modified to give a vacuum of better than 10-9 T in the specimen region and the capacity to do in situ sample heating and deposition. Cobalt was deposited onto clean Si(100) samples by thermal evaporation from cobalt-coated Ta filaments.

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