Surface orientation dependence of interface properties of GeO2/Ge metal-oxide-semiconductor structures fabricated by thermal oxidation

2009 ◽  
Vol 106 (7) ◽  
pp. 073716 ◽  
Author(s):  
Takashi Sasada ◽  
Yosuke Nakakita ◽  
Mitsuru Takenaka ◽  
Shinichi Takagi
Keyword(s):  
Metal Oxide ◽  
Thermal Oxidation ◽  
Orientation Dependence ◽  
Surface Orientation ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Interface Properties ◽  
Semiconductor Structures

Interface properties in metal-oxide-semiconductor structures on n-type 4H-SiC(033̄8)

2002 ◽  
Vol 81 (25) ◽  
pp. 4772-4774 ◽  
Author(s):  
Hiroshi Yano ◽  
Taichi Hirao ◽  
Tsunenobu Kimoto ◽  
Hiroyuki Matsunami ◽  
Hiromu Shiomi
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Interface Properties ◽  
Semiconductor Structures

Interface Properties of Metal–Oxide–Semiconductor Structures on 4H-SiC{0001} and (11\bar20) Formed by N2O Oxidation

2005 ◽  
Vol 44 (3) ◽  
pp. 1213-1218 ◽  
Author(s):  
Tsunenobu Kimoto ◽  
Yosuke Kanzaki ◽  
Masato Noborio ◽  
Hiroaki Kawano ◽  
Hiroyuki Matsunami
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Interface Properties ◽  
Semiconductor Structures
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