Electron transport properties of copper films. II. Thermoelectric power

1975 ◽  
Vol 46 (11) ◽  
pp. 4777-4783 ◽  
Author(s):  
A. P. Thakoor ◽  
Ritu Suri ◽  
S. K. Suri ◽  
K. L. Chopra
1997 ◽  
Vol 499 ◽  
Author(s):  
Charles C. Hays ◽  
Jianshi Zhou ◽  
John B. Goodenough ◽  
John T. Markert

ABSTRACTThe temperature dependence of the resistance and thermoelectric power under hydrostatic pressure between 10 and 300 K are reported for two compositions, x = 0.044 and x = 0.05, of the narrowband system La1-xSrxTiO3. The application of hydrostatic pressure at room temperature induces a transition from a positive p-type to a negative n-type thermoelectric power for x = 0.044. This behavior is interpreted within a model of itinerant-electron antiferromagnetism in LaTiO3.


1975 ◽  
Vol 46 (6) ◽  
pp. 2574-2582 ◽  
Author(s):  
Ritu Suri ◽  
A. P. Thakoor ◽  
K. L. Chopra

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ACS Nano ◽  
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2021 ◽  
Author(s):  
Zhikai Zhao ◽  
Chenyang Guo ◽  
Lifa Ni ◽  
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We develop a method based on the mechanically controllable break junction technique to investigate the electron transport properties of single molecular junctions upon fiber waveguided light. In our strategy, a...


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