Electron Transport Properties of La1-xSrxTiO3 Under Hydrostatic Pressure

1997 ◽  
Vol 499 ◽  
Author(s):  
Charles C. Hays ◽  
Jianshi Zhou ◽  
John B. Goodenough ◽  
John T. Markert
Keyword(s):  
Electron Transport ◽  
Hydrostatic Pressure ◽  
Temperature Dependence ◽  
Transport Properties ◽  
Thermoelectric Power ◽  
Room Temperature ◽  
Itinerant Electron ◽  
Electron Transport Properties ◽  
P Type

ABSTRACTThe temperature dependence of the resistance and thermoelectric power under hydrostatic pressure between 10 and 300 K are reported for two compositions, x = 0.044 and x = 0.05, of the narrowband system La1-xSrxTiO3. The application of hydrostatic pressure at room temperature induces a transition from a positive p-type to a negative n-type thermoelectric power for x = 0.044. This behavior is interpreted within a model of itinerant-electron antiferromagnetism in LaTiO3.

High-Temperature Electron Transport Properties in AlGaN/GaN Heterostructure Field Effect Transistors

2000 ◽  
Vol 639 ◽  
Author(s):  
Narihiko Maeda ◽  
Tadashi Saitoh ◽  
Kotaro Tsubaki ◽  
Toshio Nishida ◽  
Naoki Kobayashi
Keyword(s):  
High Temperature ◽  
Electron Transport ◽  
Temperature Dependence ◽  
Transport Properties ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistors ◽  
Heterostructure Field Effect Transistors ◽  
Electron Transport Properties ◽  
Gan Heterostructure

Electron transport properties in the Al0.15Ga0.85N/GaN heterostructure field effect transistors (HFETs) have been examined from room temperature up to 400°C. The temperature dependencies of the two-dimensional electron gas (2DEG) mobility have been systematically measured for the samples with different 2DEG densities. The 2DEG mobility has decreased with increasing the temperature, however, its decrease ratio has been no longer large above 300°C. Moreover, the 2DEG mobility has found to be less dependent on the 2DEG density at higher temperatures. These observed features indicate that the 2DEG mobility above room temperature is limited by longitudinal optical (LO) phonon scattering, as is expected by theoretical prediction. The observed 2DEG mobilities at 400°C were as high as from 100 to 120 cm2/Vs, directly providing the evidence for suitability of the HFET of this material system for high-temperature applications. The temperature dependence of the transconductance (gm) of a HFET device has also been examined up to 400°C. It has been revealed that the temperature dependence of gm has basically the same features as those of the 2DEG mobility in the corresponding temperature region.

THE EFFECT OF THE MICROSCOPIC STATE OF A BALLISTIC RING ON THE AHARONOV-BOHM OSCILLATIONS TEMPERATURE DEPENDENCE

2004 ◽  
Vol 18 (27n29) ◽  
pp. 3505-3508 ◽  
Author(s):  
E. B. OLSHANETSKY ◽  
Z. D. KVON ◽  
D. V. SHEGLOV ◽  
A. V. LATYSHEV ◽  
A. I. TOROPOV ◽  
...  
Keyword(s):  
Electron Transport ◽  
Temperature Dependence ◽  
Transport Properties ◽  
Anodic Oxidation ◽  
Electron Gas ◽  
2D Electron Gas ◽  
Local Anodic Oxidation ◽  
Electron Transport Properties ◽  
Aharonov Bohm

In the present work we study the electron transport properties of small (≈ 100 nm) ring interferometers fabricated by the local anodic oxidation of a AlGaAs / GaAs heterostructures containing 2D electron gas. Owing to the small size of the rings the Aharonov-Bohm (AB) oscillations in them can be observed at temperatures as high as 9 K. It has been found that the temperature dependence of AB oscillations amplitude in these rings is sensitive to the modification of the microscopic potential realization resulting from thermal recycling of the structure.

Nonlinear electron transport properties of InAlAs/InGaAs based Y-branch junctions for microwave rectification at room temperature

2005 ◽  
Vol 134 (3) ◽  
pp. 217-222 ◽  
Author(s):  
Rashmi ◽  
Lukasz Bednarz ◽  
Benoit Hackens ◽  
Ghania Farhi ◽  
Vincent Bayot ◽  
...  
Keyword(s):  
Electron Transport ◽  
Transport Properties ◽  
Room Temperature ◽  
Electron Transport Properties

scholarly journals Novel Room Temperature Stable Electride 12SrO•7Al2O3 Thin Films: Fabrication, Optical and Electron Transport Properties

2007 ◽  
Vol 115 (1345) ◽  
pp. 567-570 ◽  
Author(s):  
Masashi MIYAKAWA ◽  
Naoto UEDA ◽  
Toshio KAMIYA ◽  
Masahiro HIRANO ◽  
Hideo HOSONO
Keyword(s):  
Thin Films ◽  
Electron Transport ◽  
Transport Properties ◽  
Room Temperature ◽  
Electron Transport Properties

Electron transport properties of copper films. II. Thermoelectric power

1975 ◽  
Vol 46 (11) ◽  
pp. 4777-4783 ◽  
Author(s):  
A. P. Thakoor ◽  
Ritu Suri ◽  
S. K. Suri ◽  
K. L. Chopra
Keyword(s):  
Electron Transport ◽  
Transport Properties ◽  
Thermoelectric Power ◽  
Copper Films ◽  
Electron Transport Properties

Tuning the electron transport properties of a one-dimensional constriction using hydrostatic pressure

2002 ◽  
Vol 65 (23) ◽  
Author(s):  
R. Wirtz ◽  
R. Newbury ◽  
J. T. Nicholls ◽  
W. R. Tribe ◽  
M. Y. Simmons ◽  
...  
Keyword(s):  
Electron Transport ◽  
Hydrostatic Pressure ◽  
Transport Properties ◽  
One Dimensional ◽  
Electron Transport Properties

Magnetic and electron transport properties of Co2Si nanomagnets

2021 ◽  
Vol 5 (2) ◽  
Author(s):  
Balamurugan Balasubramanian ◽  
Tom A. George ◽  
Priyanka Manchanda ◽  
Rabindra Pahari ◽  
Ahsan Ullah ◽  
...  
Keyword(s):  
Electron Transport ◽  
Transport Properties ◽  
Electron Transport Properties
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